Datasheet > JTX1N6474US.TR

JTX1N6474US.TR

更新时间： 2024-11-14 21:20:39

品牌	Logo	应用领域
商升特 - SEMTECH		二极管
页数	文件大小	规格书
3页	125K
描述
Trans Voltage Suppressor Diode,

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中文翻译

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技术参数
数据手册

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JTX1N6474US.TR 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
风险等级：	5.79	二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE
Base Number Matches：	1

JTX1N6474US.TR 数据手册

1N6469US THRU 1N6476US

QPL 1500 Watt Surface Mount TVS

POWER DISCRETES

Features

Description

The 1N64xx series of transient voltage suppressors are

designed to protect military and commercial electronic

equipment from overvoltages caused by lightning, ESD,

EFT, inductive load switching, and EMP. These devices

are constructed using a p-n junction TVS diode in a

hermetically sealed, voidless glass package. The

hermetically sealed package provides high reliability in

harsh environmental conditions. TVS diodes are further

characterized by their high surge capability, low operating

and clamping voltages, and a theoretically instantaneous

response time. This makes them ideal for use as board

level protection for sensitive semiconductor components.

These devices are DSCC QPL qualified to MIL-PRF-

19500/552.

1500 Watts peak pulse power (tp = 10/1000µs)

Voidless hermetically sealed glass package

Metallurgically bonded

High surge capacity

Unidirectional

Available in JAN, JTX, and JTXV versions per

MIL-PRF-19500/552

Applications

Aerospace and industrial electronics

Board level protection

Airborne systems

Shipboard systems

Ground systems

Mechanical Characteristics

Hermetically sealed glass package

Absolute Maximum Ratings

Rating

Symbol

Value

Units

Peak Pulse Power (tp = 10 x 1000µs)

Operating Temperature Range

Ppk

1500

-65 to +175

Watts

°C

Storage Temperature Range

T_STG

°C

Steady-State Power Dissipation @ TL = 75°C (3/8")

Watts

Electrical Characteristics

Electrical specifications @ T_A= 25°C unless otherwise specified.

Device

Type

Reverse

Standoff

Voltage

V_RWM

Reverse

Leakage

Current

I_R

Minimum

Test

Maximum Peak Pulse Peak Pulse

Temp.

Breakdown Current Clamping

Current

Coef.

of V

Voltage

V_BR@ I_T

Voltage

V_C@ I_PP

I_T

T_P=^P1^PmS

T_P=^P2^P0µS

αV_Z^BR

µA

%/ °C

0.040

1N6469

1N6470

1500

1000

5.6

6.5

167

137

945

775

11.0

1N6471

13.6

22.6

374

0.050

1N6472

1N6473

1N6474

1N6475

1N6476

16.4

27.0

33.0

43.7

54.0

26.5

41.4

47.5

63.5

78.5

36.5

322

206

190

136

106

0.060

0.084

0.093

0.094

0.096

30.5

40.3

51.6

Revision: September 24, 2008

www.semtech.com

12 3

中文翻译

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与JTX1N6474US.TR相关器件

型号	品牌	获取价格	描述	数据表
JTX1N6476	SEMTECH	获取价格	Trans Voltage Suppressor Diode, 1500W, 51.6V V(RWM), Unidirectional, 1 Element, Silicon,
JTX210	JAUCH	获取价格	4 Pad Version 1.6 x 1.2 mm
JTX-2-10T	MINI	获取价格	RF Transformer, 50MHz Min, 1000MHz Max, 1:1.414,
JTX2-ED8054/1	MINI	获取价格	RF Transformer, 0.7MHz Min, 400MHz Max
JTX2-ED8054/1+	MINI	获取价格	RF Transformer, 0.7MHz Min, 400MHz Max
JTX2N3418	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-5
JTX2N3419	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, TO-
JTX2N3506	MOTOROLA	获取价格	Small Signal Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD
JTX2N3507	MOTOROLA	获取价格	3000mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-205AD, 79-04, TO-39, 3 PIN
JTX310	JAUCH	获取价格	Quartz Crystal

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