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JTX1N6127

更新时间： 2024-11-14 17:29:59
品牌 Logo 应用领域
商升特 - SEMTECH 二极管
页数 文件大小 规格书
2页 109K
描述
Trans Voltage Suppressor Diode, 500W, 56V V(RWM), Bidirectional, 2 Element, Silicon, HERMETIC SEALED, GLASS PACKAGE-2

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JTX1N6127 技术参数

生命周期：Active包装说明：HERMETIC SEALED, GLASS PACKAGE-2
针数：2Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.10.00.50
风险等级：5.7其他特性：HIGH RELIABILITY
最小击穿电压：71.3 V外壳连接：ISOLATED
配置：COMMON CATHODE, 2 ELEMENTS二极管元件材料：SILICON
二极管类型：TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码：O-LALF-W2
JESD-609代码：e2最大非重复峰值反向功率耗散：500 W
元件数量：2端子数量：2
最高工作温度：175 °C最低工作温度：-65 °C
封装主体材料：GLASS封装形状：ROUND
封装形式：LONG FORM极性：BIDIRECTIONAL
认证状态：Not Qualified参考标准：MIL-19500/516
最大重复峰值反向电压：56 V表面贴装：NO
技术：ZENER端子面层：TIN COPPER
端子形式：WIRE端子位置：AXIAL
Base Number Matches：1

JTX1N6127 数据手册

 浏览型号JTX1N6127的Datasheet PDF文件第2页 
1N6102A  
Thru  
QPL  
1N6137A  
500 Watt Axial Leaded TVS  
TEL:805-498-2111 FAX:805-498-3804  
DESCRIPTION  
FEATURES:  
The 1N61xx series of transient voltage suppressors are  
designed to protect military and commercial electronic  
equipment from overvoltages caused by lightning, ESD,  
EFT, inductive load switching, and EMP. These devices are  
constructed using two p-n junction TVS diodes in a back-to-  
back configuration, hermetically sealed in a voidless glass  
package. The hermetically sealed package provides high  
reliability in harsh environmental conditions. TVS diodes  
are further characterized by their high surge capability, low  
operating and clamping voltages, and a theoretically  
instantaneous response time. This makes them ideal for  
use as board level protection for sensitive semiconductor  
components.  
•
•
•
•
•
•
500 Watts Peak Pulse Power (tp = 10/1000µs)  
Voidless hermetically sealed glass package  
Metallurgically bonded  
High surge capacity  
Military & Industrial applications  
Available in JAN, JTX, JTXV and JANS versions  
per MIL-S-19500/516  
MECHANICAL CHARACTERISTICS:  
•
•
•
Hermetically sealed glass package  
Tinned copper leads  
Marking : P/N, date code, logo  
MAXIMUM RATINGS  
RATING  
SYMBOL  
Ppk  
VALUE  
500  
UNIT  
Watts  
°C  
Peak Pulse Power (tp = 10 x 1000µs)  
Operating Temperature  
Tj  
-65 to +175  
-65 to +175  
3
Storage Temperature  
Tstg  
PD  
°C  
Steady-State Power Dissipation @ TL = 75ºC (3/8”)  
Watts  
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise specified)  
REVERSE  
STAND-OFF  
VOLTAGE  
REVERSE  
LEAKAGE  
CURRENT  
MINIMUM  
BREAKDOWN  
VOLTAGE  
TEST  
CURRENT  
MAXIMUM  
CLAMPING  
VOLTAGE  
PEAK PULSE  
CURRENT  
Ipp  
TEMPERATURE  
COEFFICIENT  
MAXIMUM  
DEVICE  
TYPE  
REVERSE  
LEAKAGE  
CURRENT (Ir2)  
TA=+150°C  
(A)  
I
OF V  
BR  
αVz  
T
tp = 1ms  
V
I
V
@ I  
VC @ I  
PP  
RWM  
R
BR  
T
(V)  
5.2  
5.7  
6.2  
6.9  
(µA)  
100  
50  
20  
20  
(V)  
(mA)  
175  
175  
150  
150  
(V)  
(A)  
% / °C  
0.05  
0.06  
0.06  
0.06  
1N6102A  
1N6103A  
1N6104A  
1N6105A  
6.46  
7.13  
7.79  
8.65  
10.5  
11.2  
12.1  
13.4  
47.6  
44.6  
41.3  
37.3  
4000  
750  
500  
300  
1N6106A  
1N6107A  
1N6108A  
1N6109A  
7.6  
8.4  
9.1  
9.9  
20  
20  
20  
20  
9.50  
10.45  
11.40  
12.35  
125  
125  
100  
100  
14.5  
15.6  
16.9  
18.2  
34.5  
32.0  
29.6  
27.5  
0.07  
0.07  
0.07  
0.08  
200  
200  
150  
150  
1N6110A  
1N6111A  
1N6112A  
1N6113A  
11.4  
12.2  
13.7  
15.2  
20  
20  
1
14.25  
15.20  
17.10  
19.0  
75  
75  
65  
65  
21.0  
22.3  
25.1  
27.7  
23.8  
22.4  
19.9  
18.0  
0.08  
0.08  
0.085  
0.085  
100  
100  
100  
100  
1
1N6114A  
1N6115A  
1N6116A  
1N6117A  
16.7  
18.2  
20.6  
22.8  
1
1
1
1
20.9  
22.8  
25.7  
28.5  
50  
50  
50  
40  
30.5  
33.3  
37.4  
41.6  
16.4  
15.0  
13.4  
12.0  
0.085  
0.09  
0.09  
0.09  
100  
100  
100  
100  
1N6118A  
1N6119A  
1N6120A  
1N6121A  
1N6122A  
1N6123A  
1N6124A  
1N6125A  
1N6126A  
1N6127A  
1N6128A  
1N6129A  
1N6130A  
1N6131A  
1N6132A  
1N6133A  
25.1  
27.4  
29.7  
32.7  
35.8  
38.8  
42.6  
47.1  
51.7  
56.0  
62.2  
69.2  
76.0  
83.6  
91.2  
98.8  
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
31.4  
34.2  
37.1  
40.9  
44.7  
48.5  
53.2  
58.9  
64.6  
71.3  
77.9  
86.5  
95.0  
104.5  
114.0  
123.5  
40  
30  
30  
30  
25  
25  
20  
20  
20  
20  
15  
15  
12  
12  
10  
10  
45.7  
49.9  
53.6  
59.1  
64.6  
70.1  
77.0  
85.3  
97.1  
103.1  
112.8  
125.1  
137.6  
151.3  
165.1  
178.8  
10.9  
10.0  
9.3  
8.5  
7.7  
7.1  
6.5  
5.9  
5.1  
4.8  
4.4  
4.0  
3.6  
3.3  
3.0  
2.8  
0.095  
0.095  
0.095  
0.095  
0.095  
0.095  
0.095  
0.100  
0.100  
0.100  
0.100  
0.100  
0.100  
0.100  
0.100  
0.105  
100  
100  
100  
100  
100  
100  
100  
100  
100  
100  
100  
100  
100  
100  
100  
100  
1N6134A  
1N6135A  
1N6136A  
1N6137A  
114.0  
121.6  
136.8  
152.0  
1
1
1
1
142.5  
152.0  
171.0  
190.0  
8
8
5
5
206.3  
218.4  
245.7  
273.0  
2.4  
2.3  
2.0  
1.8  
0.105  
0.105  
0.110  
0.110  
100  
100  
100  
100  
1. Non-A Part has 5% higher clamping voltage, 5% lower minimum breakdown voltage, and 5% lower peak pulse current.  
© 1997 SEMTECH CORP.  
652 MITCHELL ROAD NEWBURY PARK CA 91320  
12

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JTX1N6128 SEMTECH

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JTX1N6129A SEMTECH

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 		Trans Voltage Suppressor Diode, 500W, 76V V(RWM), Bidirectional, 2 Element, Silicon, HERME
JTX1N6130A SEMTECH

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JTX1N6131 SEMTECH

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 		Trans Voltage Suppressor Diode, 500W, 83.6V V(RWM), Bidirectional, 2 Element, Silicon, HER
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JTX1N6132 SEMTECH

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 		Trans Voltage Suppressor Diode, 500W, 91.2V V(RWM), Bidirectional, 2 Element, Silicon, HER
JTX1N6132A SEMTECH

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 		Trans Voltage Suppressor Diode, 500W, 91.2V V(RWM), Bidirectional, 2 Element, Silicon, HER
JTX1N6133 SEMTECH

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 		Trans Voltage Suppressor Diode, 500W, 98.8V V(RWM), Bidirectional, 2 Element, Silicon, HER

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