Datasheet > JTX1N6461US

JTX1N6461US

更新时间： 2024-01-21 14:33:30

品牌	Logo	应用领域
商升特 - SEMTECH		局域网二极管
页数	文件大小	规格书
4页	126K
描述
Trans Voltage Suppressor Diode, 500W, 5V V(RWM), Unidirectional, 1 Element, Silicon,

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JTX1N6461US 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.10.00.50
风险等级：	5.79	其他特性：	HIGH RELIABILITY
最小击穿电压：	5.6 V	外壳连接：	ISOLATED
配置：	SINGLE	二极管元件材料：	SILICON
二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE	JESD-30 代码：	O-LELF-R2
最大非重复峰值反向功率耗散：	500 W	元件数量：	1
端子数量：	2	封装主体材料：	GLASS
封装形状：	ROUND	封装形式：	LONG FORM
极性：	UNIDIRECTIONAL	最大功率耗散：	3 W
参考标准：	MIL-19500	最大重复峰值反向电压：	5 V
表面贴装：	YES	技术：	AVALANCHE
端子形式：	WRAP AROUND	端子位置：	END
Base Number Matches：	1

JTX1N6461US 数据手册

1N6461US THRU 1N6468US

QPL 500 Watt Surface Mount TVS

POWER DISCRETES

Features

Description

The 1N64xx series of transient voltage suppressors are

designed to protect military and commercial electronic

equipment from overvoltages caused by lightning, ESD,

EFT, inductive load switching, and EMP. These devices

are constructed using a p-n junction TVS diode in a

hermetically sealed, voidless glass package. The

hermetically sealed package provides high reliability in

harsh environmental conditions. TVS diodes are further

characterized by their high surge capability, low operating

and clamping voltages, and a theoretically instantaneous

response time. This makes them ideal for use as board

500 Watts peak pulse power (tp = 10/1000µs)

Voidless hermetically sealed glass package

Metallurgically bonded

High surge capacity

Unidirectional

Available in JTX, and JTXV versions per

MIL-S-19500/551

Applications

Aerospace and industrial electronics

level protection for sensitive semiconductor components. Board level protection

These devices are DESC QPL qualified to MIL-S-19500/

551.

Airborne systems

Shipboard systems

Ground systems

Mechanical Characteristics

Hermetically sealed glass package

Absolute Maximum Ratings

Rating

Symbol

Value

Units

Peak Pulse Power (tp = 10 x 1000µs)

Storage Temperature Range

Ppk

T_STG

500

-65 to +175

Watts

°C

Steady-State Power Dissipation @ TL = 75°C (3/8")

Watts

Revision: August 8, 2007

www.semtech.com

12 3 4

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与JTX1N6461US相关器件

型号	品牌	获取价格	描述	数据表
JTX1N6461US.TR	SEMTECH	获取价格	Trans Voltage Suppressor Diode,
JTX1N6462US	SEMTECH	获取价格	Trans Voltage Suppressor Diode, 500W, 6V V(RWM), Unidirectional, 1 Element, Silicon,
JTX1N6463US.TR	SEMTECH	获取价格	Trans Voltage Suppressor Diode,
JTX1N6464US	SEMTECH	获取价格	Trans Voltage Suppressor Diode, 500W, 15V V(RWM), Unidirectional, 1 Element, Silicon,
JTX1N6466US.TR	SEMTECH	获取价格	Trans Voltage Suppressor Diode,
JTX1N6468US	SEMTECH	获取价格	Trans Voltage Suppressor Diode, 500W, 51.6V V(RWM), Unidirectional, 1 Element, Silicon,
JTX1N6469	SEMTECH	获取价格	Trans Voltage Suppressor Diode, 1500W, 5V V(RWM), Unidirectional, 1 Element, Silicon,
JTX1N6471	SEMTECH	获取价格	Trans Voltage Suppressor Diode, 1500W, 12V V(RWM), Unidirectional, 1 Element, Silicon,
JTX1N6474US.TR	SEMTECH	获取价格	Trans Voltage Suppressor Diode,
JTX1N6476	SEMTECH	获取价格	Trans Voltage Suppressor Diode, 1500W, 51.6V V(RWM), Unidirectional, 1 Element, Silicon,

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