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JS28F128J3A-110 PDF预览

JS28F128J3A-110

更新时间: 2022-11-25 16:13:17
品牌 Logo 应用领域
英特尔 - INTEL 闪存
页数 文件大小 规格书
72页 909K
描述
Intel StrataFlash Memory (J3)

JS28F128J3A-110 数据手册

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256-Mbit J3 (x8/x16)  
1.0  
Introduction  
This document describes the Intel StrataFlash® Memory (J3) device. It includes a description of  
device features, operations, and specifications.  
1.1  
Nomenclature  
AMIN:  
AMIN = A0 for x8  
AMIN = A1 for x16  
AMAX:  
32 Mbit  
64 Mbit  
128 Mbit  
256 Mbit  
AMAX = A21  
AMAX = A22  
AMAX = A23  
AMAX = A24  
Block:  
Clear:  
CUI:  
MLC:  
OTP:  
PLR:  
PR:  
A group of flash cells that share common erase circuitry and erase simultaneously  
Indicates a logic zero (0)  
Command User Interface  
Multi-Level Cell  
One Time Programmable  
Protection Lock Register  
Protection Register  
PRD  
Protection Register Data  
Program: To write data to the flash array  
RFU:  
Set:  
Reserved for Future Use  
Indicates a logic one (1)  
SR:  
Status Register  
SRD:  
VPEN:  
Status Register Data  
Refers to a signal or package connection name  
Refers to timing or voltage levels  
Write State Machine  
Extended Configuration Register  
eXtended Status Register  
VPEN  
:
WSM:  
ECR:  
XSR:  
1.2  
Conventions  
0x:  
Hexadecimal prefix  
0b:  
Binary prefix  
k (noun):  
M (noun):  
Nibble  
Byte:  
Word:  
Kword:  
Kb:  
1,000  
1,000,000  
4 bits  
8 bits  
16 bits  
1,024 words  
1,024 bits  
KB:  
1,024 bytes  
Mb:  
1,048,576 bits  
MB:  
1,048,576 bytes  
Brackets:  
Square brackets ([]) will be used to designate group membership or to define a  
group of signals with similar function (i.e., A[21:1], SR[4,1] and D[15:0]).  
Datasheet  
7

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