Datasheet > JMSH1018PG

JMSH1018PG

更新时间： 2024-04-09 19:01:09

品牌	Logo	应用领域
捷捷微 - JJM		/
页数	文件大小	规格书
6页	837K
描述
中压 N-ch (40V ~ 400V)

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中文翻译

获取价格

数据手册

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JMSH1018PG 数据手册

JMSH1018PG

100V 15.7mW N-Ch Power MOSFET

Features

Product Summary

Parameter

V_DS

Value

Unit

•

Ultra-low R_DS(ON)

•

Ultra-low R_DS(ON)

100

3.1

•

Low Gate Charge

•

V_{GS(th)_Typ}

I_D(@ V_GS= 10V) ⁽¹⁾

•

100% UIS Tested, 100% R_gTested

•

Pb-free Lead Plating

R_{DS(ON)_Typ}(@ V_GS= 10V)

•

15.7

•

Halogen-free and RoHS-compliant

•

Applications

•

Motor Driving in Power Tool, E-vehicle, Robotics

Power Management in C mputing, CE IE 4.0, Communications

Current Switching in DC/DC & AC/DC (SR) Sub-systems

Power Management in Telecom., Industrial Automation, CE

L ad Switching, Quick/Wir less Charging, Motor Drivi g

PDFN5x6-8L

Pin Configuration

Top View

Bottom View

Ordering Information

Device

T_J(°C)

-55 to 150

Package

# of Pins

Marking

MSL

Media

Quantity (pcs)

JMSH1018PG

PDFN5*6-8L

SH1018P

13-inch Reel

5000

Absolute Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Value

Symbol

V_DS

Unit

Drain-to-Source Voltage

Gate-to-Source Voltage

100

±20

V_GS

T_C= 25°C

Continuous Drain

Current ⁽¹⁾

I_D

T_C= 100°C

Pulsed Drain Current ⁽²⁾

Avalanche Energy ⁽³⁾

I_DM

220

E_AS

T_C= 25°C

111

Power Dissipation ⁽⁴⁾

P_D

T_C= 100°C

T_J, T_STG

Junction & Storage Temperature Range

-55 to 150

°C

R_DS(ON)vs. V_GS

Gate Charge

200

180

160

140

120

100

V_DS= 50V

I_D= 20A

V_GS(V)

Q_g(nC)

Jiangsu JieJie Microelectronics Co., Ltd.

All product information are copyrighted and subject to legal disclaimers

Rev. 1.0

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中文翻译

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