JMSH1305AC
JMSH1305AE
135V 4.3m N-Ch Power MOSFET
Product Summary
Features
Parameter
VDS
Value
Unit
V
•
•
•
•
•
Ultra-low RDS(ON)
Low Gate Charge
135
3.0
147
4.3
VGS(th)_Typ
ID (@ VGS = 10V) (1)
V
100% UIS Tested, 100% Rg Tested
Pb-free Lead Plating
A
RDS(ON)_Typ (@ VGS = 10V)
m
Halogen-free and RoHS-compliant
Applications
•
•
•
Power Managerment in Telecom., Industrial Automation, CE
Current Switching in DC/DC & AC/DC (SR) Sub-systems
Motor Driving in Power Tool, E-vehicle, Robotics
TO-220-3L Top View
TO-263-3L Top View
D
D
G
G
G
D
S
S
S
Ordering Information
Device
TJ (°C)
-55 to 150
Package
TO-220-3L
TO-263-3L
# of Pins
Marking
MSL
N/A
1
Media
Quantity (pcs)
JMSH1305AC-U
JMSH1305AE-13
3
3
SH1305A
SH1305A
Tube
50
-55 to 150 13-inch Reel
800
Absolute Maximum Ratings (@ TA = 25°C unless otherwise specified)
Parameter
Value
Symbol
VDS
Unit
V
Drain-to-Source Voltage
Gate-to-Source Voltage
135
±20
VGS
V
TC = 25°C
147
Continuous Drain
Current (1)
ID
A
TC = 100°C
93
Pulsed Drain Current (2)
Avalanche Current (3)
Avalanche Energy (3)
IDM
IAS
588
A
A
60
EAS
540
mJ
TC = 25°C
236
Power Dissipation (4)
PD
W
TC = 100°C
94
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
°C
RDS(ON) vs. VGS
Gate Charge
20
10
8
ID = 20A
VDS = 67.5V
D = 20A
16
12
8
I
6
4
2
4
0
0
0
20
40
60
80
0
5
10
15
20
VGS (V)
Qg (nC)
JieJie Microelectronics Co., Ltd.
All product information are copyrighted and subject to legal disclaimers
Rev. 1.2
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