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JMSH1504AE7 PDF预览

JMSH1504AE7

更新时间: 2023-12-06 20:02:30
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页数 文件大小 规格书
5页 286K
描述
中压 N-ch (40V ~ 400V)

JMSH1504AE7 数据手册

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JMSH1504AE7  
150V 3.8mN-Ch Power MOSFET  
Features  
Product Summary  
Parameter  
VDS  
Value  
150  
3.2  
Unit  
V
Ultra-low RDS(ON)  
Low Gate Charge  
VGS(th)_Typ  
ID (@ VGS = 10V) (1)  
V
High Current Capability  
205  
3.8  
A
RDS(ON)_Typ (@ VGS = 10V)  
100% UIS Tested, 100% Rg Tested  
Pb-free Lead Plating  
m  
Halogen-free and RoHS-compliant  
Applications  
Power Managerment in Telecom., Industrial Automation, CE  
Current Switching in DC/DC & AC/DC (SR) Sub-systems  
Motor Driving in Power Tool, E-vehicle, Robotics  
Drain  
Pin 4,Tab  
TO-263-7L Top View  
Gate  
Pin 1  
Drain conntected to tab  
1
Source  
Pins: 2, 3, 5, 6, 7  
7
Ordering Information  
Device  
TJ (°C)  
Package  
# of Pins  
Marking  
MSL  
Media  
Quantity (pcs)  
JMSH1504AE7-13  
TO-263-7L  
3
SH1504A  
1
-55 to 150  
13-inch Reel  
800  
Absolute Maximum Ratings (@ TA = 25°C unless otherwise specified)  
Parameter  
Value  
Symbol  
VDS  
Unit  
V
Drain-to-Source Voltage  
Gate-to-Source Voltage  
150  
±20  
VGS  
V
TC = 25°C  
205  
Continuous Drain  
Current (1)  
ID  
A
TC = 100°C  
130  
Pulsed Drain Current (2)  
Avalanche Current (3)  
Avalanche Energy (3)  
IDM  
IAS  
637  
A
A
77  
EAS  
889  
mJ  
TC = 25°C  
417  
Power Dissipation (4)  
PD  
W
TC = 100°C  
167  
Junction & Storage Temperature Range  
TJ, TSTG  
-55 to 150  
°C  
RDS(ON) vs. VGS  
Gate Charge  
20  
16  
12  
8
10  
8
ID = 20A  
VDS = 75V  
D = 20A  
I
6
4
2
4
0
0
0
25  
50  
75  
100  
0
5
10  
15  
20  
VGS (V)  
Qg (nC)  
JieJie Microelectronics Co., Ltd.  
All product information are copyrighted and subject to legal disclaimers  
Rev. 1.2  
Page 1 of 5  

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