JMSH1504AE7
150V 3.8m N-Ch Power MOSFET
Features
Product Summary
Parameter
VDS
Value
150
3.2
Unit
V
•
•
•
•
•
•
Ultra-low RDS(ON)
Low Gate Charge
VGS(th)_Typ
ID (@ VGS = 10V) (1)
V
High Current Capability
205
3.8
A
RDS(ON)_Typ (@ VGS = 10V)
100% UIS Tested, 100% Rg Tested
Pb-free Lead Plating
m
Halogen-free and RoHS-compliant
Applications
•
•
•
Power Managerment in Telecom., Industrial Automation, CE
Current Switching in DC/DC & AC/DC (SR) Sub-systems
Motor Driving in Power Tool, E-vehicle, Robotics
Drain
Pin 4,Tab
TO-263-7L Top View
Gate
Pin 1
Drain conntected to tab
1
Source
Pins: 2, 3, 5, 6, 7
7
Ordering Information
Device
TJ (°C)
Package
# of Pins
Marking
MSL
Media
Quantity (pcs)
JMSH1504AE7-13
TO-263-7L
3
SH1504A
1
-55 to 150
13-inch Reel
800
Absolute Maximum Ratings (@ TA = 25°C unless otherwise specified)
Parameter
Value
Symbol
VDS
Unit
V
Drain-to-Source Voltage
Gate-to-Source Voltage
150
±20
VGS
V
TC = 25°C
205
Continuous Drain
Current (1)
ID
A
TC = 100°C
130
Pulsed Drain Current (2)
Avalanche Current (3)
Avalanche Energy (3)
IDM
IAS
637
A
A
77
EAS
889
mJ
TC = 25°C
417
Power Dissipation (4)
PD
W
TC = 100°C
167
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
°C
RDS(ON) vs. VGS
Gate Charge
20
16
12
8
10
8
ID = 20A
VDS = 75V
D = 20A
I
6
4
2
4
0
0
0
25
50
75
100
0
5
10
15
20
VGS (V)
Qg (nC)
JieJie Microelectronics Co., Ltd.
All product information are copyrighted and subject to legal disclaimers
Rev. 1.2
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