Datasheet > JANTXV1N6462US

JANTXV1N6462US

更新时间： 2024-11-29 20:50:07

品牌	Logo	应用领域
商升特 - SEMTECH		局域网二极管
页数	文件大小	规格书
4页	131K
描述
Trans Voltage Suppressor Diode, 500W, 6V V(RWM), Unidirectional, 1 Element, Silicon, SURFACE MOUNT PACKAGE-2

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JANTXV1N6462US 技术参数

生命周期：	Active	包装说明：	SURFACE MOUNT PACKAGE-2
针数：	2	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.10.00.50
风险等级：	5.38	外壳连接：	ISOLATED
最大钳位电压：	11 V	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码：	O-XELF-R2	最大非重复峰值反向功率耗散：	500 W
元件数量：	1	端子数量：	2
封装主体材料：	UNSPECIFIED	封装形状：	ROUND
封装形式：	LONG FORM	极性：	UNIDIRECTIONAL
最大功率耗散：	2.5 W	认证状态：	Qualified
参考标准：	MIL-19500/551C	最大重复峰值反向电压：	6 V
子类别：	Transient Suppressors	表面贴装：	YES
技术：	AVALANCHE	端子形式：	WRAP AROUND
端子位置：	END	Base Number Matches：	1

JANTXV1N6462US 数据手册

1N6461US THRU 1N6468US

QPL 500 Watt Surface Mount TVS

POWER DISCRETES

Features

Description

The 1N64xx series of transient voltage suppressors are

designed to protect military and commercial electronic

equipment from overvoltages caused by lightning, ESD,

EFT, inductive load switching, and EMP. These devices

are constructed using a p-n junction TVS diode in a

hermetically sealed, voidless glass package. The

hermetically sealed package provides high reliability in

harsh environmental conditions. TVS diodes are further

characterized by their high surge capability, low operating

and clamping voltages, and a theoretically instantaneous

response time. This makes them ideal for use as board

500 Watts peak pulse power (tp = 10/1000µs)

Voidless hermetically sealed glass package

Metallurgically bonded

High surge capacity

Unidirectional

Available in JTX, and JTXV versions per

MIL-S-19500/551

Applications

Aerospace and industrial electronics

level protection for sensitive semiconductor components. Board level protection

These devices are DESC QPL qualified to MIL-S-19500/

551.

Airborne systems

Shipboard systems

Ground systems

Mechanical Characteristics

Hermetically sealed glass package

Absolute Maximum Ratings

Rating

Symbol

Value

Units

Peak Pulse Power (tp = 10 x 1000µs)

Storage Temperature Range

Ppk

T_STG

500

-65 to +175

Watts

°C

Steady-State Power Dissipation @ TL = 75°C (3/8")

Watts

Revision: August 8, 2007

www.semtech.com

12 3 4

中文翻译

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与JANTXV1N6462US相关器件

型号	品牌	获取价格	描述	数据表
JANTXV1N6463	SEMTECH	获取价格	Trans Voltage Suppressor Diode, 500W, 12V V(RWM), Unidirectional, 1 Element, Silicon, HERM
JANTXV1N6463A	SEMTECH	获取价格	Trans Voltage Suppressor Diode, 500W, 12V V(RWM), Unidirectional, 1 Element, Silicon
JANTXV1N6463US	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 500W, 12V V(RWM), Unidirectional, 1 Element, Silicon, SURF
JANTXV1N6463US	SEMTECH	获取价格	Trans Voltage Suppressor Diode, 500W, 12V V(RWM), Unidirectional, 1 Element, Silicon, SURF
JANTXV1N6464	SEMTECH	获取价格	Trans Voltage Suppressor Diode, 500W, 15V V(RWM), Unidirectional, 1 Element, Silicon, HERM
JANTXV1N6464A	SEMTECH	获取价格	Trans Voltage Suppressor Diode, 500W, 15V V(RWM), Unidirectional, 1 Element, Silicon
JANTXV1N6464AUS	SEMTECH	获取价格	Trans Voltage Suppressor Diode, 500W, 15V V(RWM), Unidirectional, 1 Element, Silicon, SURF
JANTXV1N6464US	SEMTECH	获取价格	Trans Voltage Suppressor Diode, 500W, 15V V(RWM), Unidirectional, 1 Element, Silicon, SURF
JANTXV1N6465A	SEMTECH	获取价格	Trans Voltage Suppressor Diode, 500W, 24V V(RWM), Unidirectional, 1 Element, Silicon
JANTXV1N6465US	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 500W, 24V V(RWM), Unidirectional, 1 Element, Silicon, SURF

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