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JANTXV1N6467AUS

更新时间： 2024-11-30 07:18:43
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商升特 - SEMTECH /
页数 文件大小 规格书
20页 162K
描述
Trans Voltage Suppressor Diode, 500W, 40.3V V(RWM), Unidirectional, 1 Element, Silicon, SURFACE MOUNT PACKAGE-2

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The documentation and process  
conversion measures necessary to  
comply with this revision shall be  
completed by 23 October 1999.  
INCH-POUND  
MIL-PRF-19500/516D  
23 July 1999  
SUPERSEDING  
MIL-S-19500/516C  
20 January 1995  
PERFORMANCE SPECIFICATION SHEET  
SEMICONDUCTOR DEVICE, DIODE SILICON, BIPOLAR TRANSIENT VOLTAGE  
SUPPRESSOR, TYPES 1N6102 THROUGH 1N6137, 1N6102A THROUGH 1N6137A,  
1N6138 THROUGH 1N6173, 1N6138A THROUGH 1N6173A,  
1N6102US THROUGH 1N6137US, 1N6102AUS THROUGH 1N6137AUS,  
1N6138US THROUGH 1N6173US, 1N6138AUS THROUGH 1N6173AUS,  
JAN, JANTX, JANTXV, JANHC, JANKC, AND JANS  
This specification is approved for use within US Army Laboratory  
Command, Department of the Army, and is available for use by all  
Departments and Agencies of the Department of Defense.  
1. SCOPE  
1.1 Scope. This specification covers the performance requirements for 500 watt and 1,500 watt peak pulse power transient  
voltage suppressor diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.  
Two levels of product assurance are provided for die. The suffix "A" denotes a five percent voltage tolerance.  
1.2 Physical dimensions. See figure 1, figure 2 (surface mount), and figures 3 and 4 (die) herein.  
1.3 Maximum ratings. Maximum ratings are as shown in columns 4, 6, and 7 of table II herein and as follows:  
P
=
2 W (for 500 W peak pulse power devices) and 3 W (for 1,500 W peak pulse power devices) at T = +25°C (see figure 5  
R
R
A
for derating).  
P
=
3 W (for 500 W peak pulse power devices) and 5 W (for 1,500 W peak pulse power devices) at T = +75°C for L = 0.375  
L
inch (9.53 mm) (see figure 6).  
P
PR  
=
500 W (1N6102 through 1N6137 (including A and US suffix versions)) and 1,500 W (1N6138 through 1N6173 (including  
A and US suffix versions)) at t = 1 ms (see figure 7).  
p
-55°C £ T  
£ +175°C, -55°C £ T  
£ +175°C (ambient temperatures).  
STG  
op  
1.4 Primary electrical characteristics. Primary electrical characteristics are as shown in columns 2 and 4 of table II herein.  
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this  
document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAC, 3990 East Broad St.,  
Columbus, OH 43216-5000, by using the addressed Standardization Document Improvement Proposal (DD Form 1426) appearing  
at the end of this document or by letter.  
AMSC N/A  
FSC 5961  
Distribution Statement A. Approved for public release; distribution is unlimited.  
1234567...20

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与JANTXV1N6467AUS相关器件

型号 品牌 获取价格 描述 数据表
JANTXV1N6467US MICROSEMI

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 		Trans Voltage Suppressor Diode, 500W, 40.3V V(RWM), Unidirectional, 1 Element, Silicon, SU
JANTXV1N6467US SEMTECH

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 		Trans Voltage Suppressor Diode, 500W, 40.3V V(RWM), Unidirectional, 1 Element, Silicon, SU
JANTXV1N6468A SEMTECH

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 		Trans Voltage Suppressor Diode, 500W, 51.6V V(RWM), Unidirectional, 1 Element, Silicon
JANTXV1N6469 SEMTECH

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 		Trans Voltage Suppressor Diode, 1500W, 5V V(RWM), Unidirectional, 1 Element, Silicon, HERM
JANTXV1N6469US MICROSEMI

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 		Trans Voltage Suppressor Diode, 1500W, 5V V(RWM), Unidirectional, 1 Element, Silicon, GLAS
JANTXV1N6469US SEMTECH

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 		Trans Voltage Suppressor Diode, 1500W, 5V V(RWM), Unidirectional, 1 Element, Silicon, HERM
JANTXV1N647 MICROSEMI

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 		Rectifier Diode, 1 Element, 0.4A, Silicon, GLASS PACKAGE-2
JANTXV1N6470 SEMTECH

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 		Trans Voltage Suppressor Diode, 1500W, 6V V(RWM), Unidirectional, 1 Element, Silicon, HERM
JANTXV1N6470US SEMTECH

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 		Trans Voltage Suppressor Diode, 1500W, 6V V(RWM), Unidirectional, 1 Element, Silicon, HERM
JANTXV1N6470US MICROSEMI

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 		Trans Voltage Suppressor Diode, 1500W, 6V V(RWM), Unidirectional, 1 Element, Silicon, GLAS

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