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JANTXV1N6465US

更新时间: 2024-11-29 15:44:35
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网二极管
页数 文件大小 规格书
6页 481K
描述
Trans Voltage Suppressor Diode, 500W, 24V V(RWM), Unidirectional, 1 Element, Silicon, SURFACE MOUNT PACKAGE-2

JANTXV1N6465US 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active包装说明:O-XELF-R2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.41外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码:O-XELF-R2
JESD-609代码:e0最大非重复峰值反向功率耗散:500 W
元件数量:1端子数量:2
封装主体材料:UNSPECIFIED封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
极性:UNIDIRECTIONAL最大功率耗散:2.5 W
认证状态:Qualified参考标准:MIL-19500/551C
最大重复峰值反向电压:24 V表面贴装:YES
技术:AVALANCHE端子面层:Tin/Lead (Sn/Pb)
端子形式:WRAP AROUND端子位置:END
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

JANTXV1N6465US 数据手册

 浏览型号JANTXV1N6465US的Datasheet PDF文件第2页浏览型号JANTXV1N6465US的Datasheet PDF文件第3页浏览型号JANTXV1N6465US的Datasheet PDF文件第4页浏览型号JANTXV1N6465US的Datasheet PDF文件第5页浏览型号JANTXV1N6465US的Datasheet PDF文件第6页 
1N6461US – 1N6468US  
Qualified Levels:  
JAN, JANTX, and  
JANTXV  
Voidless Hermetically Sealed Unidirectional  
Available on  
commercial  
versions  
Transient Voltage Suppressors  
Qualified per MIL-PRF-19500/551  
DESCRIPTION  
This surface mount series of 500 watt voidless hermetically sealed unidirectional Transient  
Voltage Suppressors (TVS) are military qualified to MIL-PRF-19500/551 and are ideal for  
high-reliability applications where a failure cannot be tolerated. Working peak “standoff”  
voltages are available from 5.0 to 51.6 volts. They are very robust, using a hard glass casing  
and internal Category 1 metallurgical bonds. These devices are also available in axial-leaded  
packages for thru-hole mounting.  
“B” SQ-MELF  
Package  
Important: For the latest information, visit our website http://www.microsemi.com.  
FEATURES  
Surface mount equivalent of JEDEC registered 1N6461 thru 1N6468 series.  
Available as 500 watt peak pulse power (PPP).  
Also available in:  
Working peak “standoff” voltage (VWM) from 5.0 to 51.6 volt.  
High surge current and peak pulse power provides transient voltage protection for sensitive circuits.  
Triple-layer passivation.  
“B” Package  
(axial –leaded)  
1N6461 - 1N6468  
Internal “Category 1” metallurgical bonds.  
Voidless hermetically sealed glass package.  
JAN, JANTX, and JANTXV qualifications available per MIL-PRF-19500/551. Other screening in  
reference to MIL-PRF-19500 is also available.  
(See part nomenclature for all available options.)  
RoHS compliant versions available (commercial grade only).  
APPLICATIONS / BENEFITS  
Military and other high-reliability applications.  
Extremely robust construction.  
ESD and EFT protection per IEC61000-4-2 and IEC61000-4-4 respectively.  
Protection from secondary effects of lightning per select levels in IEC61000-4-5.  
Square-end-cap terminals for easy placement.  
Nonsensitive to ESD per MIL-STD-750 method 1020.  
Inherently radiation hard as described in Microsemi MicroNote 050.  
MAXIMUM RATINGS @ 25 ºC  
MSC – Lawrence  
6 Lake Street,  
Lawrence, MA 01841  
Tel: 1-800-446-1158 or  
(978) 620-2600  
Parameters/Test Conditions  
Symbol  
TJ and TSTG  
RӨJEC  
IFSM  
Value  
-55 to +175  
20  
Unit  
oC  
Junction and Storage Temperature  
Thermal Resistance, Junction to Endcap  
Forward Surge Current @ 8.3 ms half-sine  
Forward Voltage @ 1 Amp  
ºC/W  
A
80  
Fax: (978) 689-0803  
VF  
1.5  
V
MSC – Ireland  
PPP  
500  
W
Peak Pulse Power @ 10/1000 µs  
Reverse Power Dissipation (1)  
Gort Road Business Park,  
Ennis, Co. Clare, Ireland  
Tel: +353 (0) 65 6840044  
Fax: +353 (0) 65 6822298  
PR  
2.5  
W
oC  
Solder Temperature @ 10 s  
260  
Notes: 1. Derate at 50 mW/oC (see figure 4).  
Website:  
www.microsemi.com  
T4-LDS-0286-1, Rev. 1 (4/22/13)  
©2013 Microsemi Corporation  
Page 1 of 6  

JANTXV1N6465US 替代型号

型号 品牌 替代类型 描述 数据表
JAN1N6465US MICROSEMI

完全替代

Trans Voltage Suppressor Diode, 500W, 24V V(RWM), Unidirectional, 1 Element, Silicon, SURF
1N6465US MICROSEMI

完全替代

Transient Voltage Suppressor

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