Datasheet > JANTXV1N6471US

JANTXV1N6471US

更新时间： 2024-01-12 03:45:07

品牌	Logo	应用领域
美高森美 - MICROSEMI		局域网二极管
页数	文件大小	规格书
3页	162K
描述
Trans Voltage Suppressor Diode, 1500W, 12V V(RWM), Unidirectional, 1 Element, Silicon, GLASS PACKAGE-2

阅读下载

中文翻译

获取价格

技术参数
数据手册
替代型号

如果您发现信息不准确，欢迎纠错

JANTXV1N6471US 技术参数

生命周期：	Active	包装说明：	HERMETIC SEALED, GLASS PACKAGE-2
针数：	2	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.10.00.50
风险等级：	5.42	最小击穿电压：	13.6 V
击穿电压标称值：	13.6 V	外壳连接：	ISOLATED
最大钳位电压：	22.6 V	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码：	O-LELF-N2	最大非重复峰值反向功率耗散：	1500 W
元件数量：	1	端子数量：	2
最高工作温度：	175 °C	最低工作温度：	-65 °C
封装主体材料：	GLASS	封装形状：	ROUND
封装形式：	LONG FORM	极性：	UNIDIRECTIONAL
最大功率耗散：	3 W	认证状态：	Qualified
参考标准：	MIL-19500/552C	最大重复峰值反向电压：	12 V
子类别：	Transient Suppressors	表面贴装：	YES
技术：	AVALANCHE	端子形式：	NO LEAD
端子位置：	END	Base Number Matches：	1

JANTXV1N6471US 数据手册

1N6469US thru 1N6476US

Voidless-Hermetically-Sealed Surface

Mount Unidirectional Transient

Suppressors

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

This surface mount series of industry recognized voidless-hermetically-sealed

Unidirectional Transient Voltage Suppressor (TVS) designs is military qualified to MIL-

PRF-19500/552 and are ideal for high-reliability applications where a failure cannot be

tolerated. They provide a Working Peak “Standoff” Voltage selection from 5.0 to 51.6

Volts with 1500 W ratings. They are very robust in hard-glass construction and also

use an internal metallurgical bond identified as Category I for high reliability

applications. The 1500 W series is military qualified to MIL-PRF-19500/552. These

devices are also available in axial-leaded packages for thru-hole mounting by deleting

the “US” suffix (see separate data sheet for 1N6469 thru 1N6476A). Microsemi also

offers numerous other TVS products to meet higher and lower peak pulse power and

voltage ratings in both through-hole and surface-mount packages.

Package “G”

(or “D-5C”)

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

High surge current and peak pulse power provides

transient voltage protection for sensitive circuits

•

Military and other high reliability transient protection

Extremely robust construction

•

Triple-layer passivation

Working Peak “Standoff” Voltage (V_WM) from 5.0 to

51.6 V

Internal “Category I” metallurgical bonds

Voidless hermetically sealed glass package

•

Available as 1500 W Peak Pulse Power (P_PP)

JAN/TX/TXV military qualifications available per MIL-

PRF-19500/552 by adding JAN, JANTX, or JANTXV

prefix

ESD and EFT protection per IEC61000-4-2 and

IEC61000-4-4 respectively

•

Secondary lightning protection per select levels in

IEC61000-4-5

•

Further options for screening in accordance with MIL-

PRF-19500 for JANS by using a “SP” prefix, e.g.

SP6469, SP6476, etc.

•

Square-end-cap terminals for easy mounting

Nonsensitive to ESD per MIL-STD-750 Method

1020

Axial-leaded equivalents are also available (see

separate data sheet for 1N6469 thru 1N6476)

•

Inherently radiation hard as described in Microsemi

MicroNote 050

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

•

Operating & Storage Temperature: -55^oC to +175^oC

•

CASE: Hermetically sealed voidless hard glass

with Tungsten slugs

Peak Pulse Power at 25^oC: 1500 Watts @ 10/1000 µs

(also see Figures 1,2 and 4)

TERMINATIONS: End caps are Copper with

Tin/Lead (Sn/Pb) finish. Note: Previous inventory

had solid Silver end caps with Tin/Lead (Sn/Pb)

finish.

•

Impulse repetition rate (duty factor): 0.01%

Forward Surge Current: 130 Amps@ 8.33 ms one-

half sine wave

•

MARKING: Body painted and part number, etc.

POLARITY: Cathode band

•

Forward Voltage: 1.5 V @ 4 Amps dc and 4.8 V at

100 Amps (pulsed)

Steady-State Power: 3.0 W @ T_A= 25^oC (see note

below and Figure 4)

Tape & Reel option: Standard per EIA-481-B

Weight: 1100 mg

•

Thermal Resistance Junction to End Cap: 20.0 ^oC/W

Solder Temperatures: 260^oC for 10 s (maximum)

See package dimensions on last page

NOTE: Steady-state power ratings with reference to ambient are for PC boards where thermal resistance from

mounting point to ambient is sufficiently controlled where T_J(MAX)is not exceeded.

10-03-2007 REV D

Microsemi

Scottsdale Division

Page 1

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3

中文翻译

下载PDF

JANTXV1N6471US 替代型号

型号	品牌	替代类型	描述	数据表
1N6471US	MICROSEMI	完全替代	VOIDLESS HERMETICALLY SEALED SURFACE MOUNT UNDIRECTIONAL TRANSIENT SUPPRESSORS

与JANTXV1N6471US相关器件

型号	品牌	获取价格	描述	数据表
JANTXV1N6472	SEMTECH	获取价格	Trans Voltage Suppressor Diode, 1500W, 15V V(RWM), Unidirectional, 1 Element, Silicon, HER
JANTXV1N6472US	SEMTECH	获取价格	Trans Voltage Suppressor Diode, 1500W, 15V V(RWM), Unidirectional, 1 Element, Silicon, HER
JANTXV1N6472US	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 15V V(RWM), Unidirectional, 1 Element, Silicon, GLA
JANTXV1N6473	SEMTECH	获取价格	Trans Voltage Suppressor Diode, 1500W, 24V V(RWM), Unidirectional, 1 Element, Silicon, HER
JANTXV1N6473US	SEMTECH	获取价格	Trans Voltage Suppressor Diode, 1500W, 24V V(RWM), Unidirectional, 1 Element, Silicon, HER
JANTXV1N6473US	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 24V V(RWM), Unidirectional, 1 Element, Silicon, GLA
JANTXV1N6474	SEMTECH	获取价格	Trans Voltage Suppressor Diode, 1500W, 31V V(RWM), Unidirectional, 1 Element, Silicon, HER
JANTXV1N6474	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 30.5V V(RWM), Unidirectional, 1 Element, Silicon,
JANTXV1N6474US	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 30.5V V(RWM), Unidirectional, 1 Element, Silicon, G
JANTXV1N6474US	SEMTECH	获取价格	Trans Voltage Suppressor Diode, 1500W, 30.5V V(RWM), Unidirectional, 1 Element, Silicon, H

与JANTXV1N6471US相关文章

MBRS340T3G手册解读：参数说明、产品特性及应用
2024-06-28

5
PMOS管背靠背连接：串联还是并联？
2024-06-28

5
高压电解电容的分类与选型策略
2024-06-28

6
数码管：基本概念、分类、技术发展及市场趋势
2024-06-27

12

产品中心

服务支持

精选活动

关于我们

帮助中心

JANTXV1N6471US

JANTXV1N6471US 技术参数

JANTXV1N6471US 数据手册

JANTXV1N6471US 替代型号

与JANTXV1N6471US相关器件

与JANTXV1N6471US相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

JANTXV1N6471US

JANTXV1N6471US 技术参数

JANTXV1N6471US 数据手册

JANTXV1N6471US 替代型号

与JANTXV1N6471US相关器件

与JANTXV1N6471US相关文章

您还可以找

您在本页遇到什么问题？