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JANTXV1N647UR-1 PDF预览

JANTXV1N647UR-1

更新时间: 2024-11-29 14:51:43
品牌 Logo 应用领域
美高森美 - MICROSEMI 二极管
页数 文件大小 规格书
3页 165K
描述
Rectifier Diode, 1 Element, 0.15A, Silicon, GLASS, SIMILAR TO DO-213AA, 2 PIN

JANTXV1N647UR-1 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:DO-213AA
包装说明:GLASS, SIMILAR TO DO-213AA, 2 PIN针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.39
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:O-LELF-R2JESD-609代码:e0
湿度敏感等级:1元件数量:1
端子数量:2最大输出电流:0.15 A
封装主体材料:GLASS封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Qualified参考标准:MIL-19500/240J
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:WRAP AROUND端子位置:END
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

JANTXV1N647UR-1 数据手册

 浏览型号JANTXV1N647UR-1的Datasheet PDF文件第2页浏览型号JANTXV1N647UR-1的Datasheet PDF文件第3页 
1N645 to 649  
or  
Silicon Rectifier Diodes  
DO-35 Glass Package  
1N645-1 to 649-1  
Use Advantages  
Used as a general purpose rectifier in power supplies, or for clipping and  
steering applications.  
High performance alternative to small signal diodes where space does not  
permit use of power rectifiers.  
May be used in hostile environments where hermeticity and reliability are  
important i.e. (Military and Aero/Space). MIL-S- 19500/ 240 approvals.  
Available up to JANTXV-1 level.  
"S" level screening capability to Source Control Drawings.  
Features  
DO -35 G lass Package  
Six Sigma quality  
Lead Dia.  
0.018-0.022"  
0.458-0.558 mm  
Humidity proof glass  
Metallurgicallybonded  
Thermally matched system  
No thermal fatigue  
High surge capability  
Dia.  
0.06-0.09"  
1.0"  
25.4 m m  
(M in.)  
Length  
0.120-.200"  
3.05-5.08- mm  
1.53-2.28 mm  
Sigma Bond™ plated contacts  
100% guaranteed solderability  
(DO-213AA) SMD MELF commercial (LL) and MIL (UR-1) types available  
Absolute Maximum Ratings  
Symbol  
Ptot  
Value  
600  
Unit  
mWatts  
mAmps  
oC  
Power Dissipation at 3/8" from the body, TL= 75 oC  
AverageForwardRectifiedCurrentatTL = 75 oC  
OperatingandStorageTemperatureRange  
ThermalImpedance  
IAV  
400  
TO&S  
ZqJX  
-65 to 175  
35  
oC/W  
Detail Specifications  
Breakdown  
Voltage  
(MIN.)  
@ 100µA  
(BV)  
Maximum  
Average Rectified Current  
_______________  
Forward  
Voltage  
Drop  
Maximum  
Maximum  
Surge  
Current Capacitance  
Typical  
Junction  
Reverse  
Voltage  
Reverse Leakage Current  
_______________  
(IR) @ VR  
(IO)  
(IO)  
(VF) @ IF = 400mA  
(IFSM  
)
@ -12V  
(CO)  
(VR)  
25° C  
150° C (MIN.)  
(MAX.) 25° C  
100° C  
(NOTE 1)  
Type  
Volts  
Volts  
Amps  
Amps  
Volts  
µA  
µA  
Amps  
pF  
1N645,-1  
1N646,-1  
1N647,-1  
1N648,-1  
1N649,-1  
225  
300  
400  
500  
600  
275  
360  
480  
600  
720  
0.4  
0.4  
0.4  
0.4  
0.4  
0.15  
0.15  
0.15  
0.15  
0.15  
1.0  
1.0  
1.0  
1.0  
1.0  
0.2  
0.2  
0.2  
0.2  
0.2  
15  
15  
20  
20  
25  
3
3
3
3
3
9
9
9
9
9
Note 1: Surge Current @TA = +25° C to +150° C, for 1 Second  
For MELF DO-213AA surface mount package, replace "1N" prefix with "LL" for commercial.  
6 Lake Street - Lawrence, MA 01841  
Tel: 978-681-0392 - Fax: 978-681-9135  

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