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JANTXV1N6141US

更新时间: 2024-09-16 12:59:31
品牌 Logo 应用领域
美高森美 - MICROSEMI 瞬态抑制器二极管局域网
页数 文件大小 规格书
2页 110K
描述
Trans Voltage Suppressor Diode, 1500W, 6.9V V(RWM), Unidirectional, 1 Element, Silicon, MELF-2

JANTXV1N6141US 技术参数

是否Rohs认证: 不符合生命周期:Active
零件包装代码:MELF包装说明:O-LELF-R2
针数:2Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.44外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码:O-LELF-R2
JESD-609代码:e0最大非重复峰值反向功率耗散:1500 W
元件数量:1端子数量:2
封装主体材料:GLASS封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
极性:UNIDIRECTIONAL认证状态:Qualified
参考标准:MIL最大重复峰值反向电压:6.9 V
表面贴装:YES技术:AVALANCHE
端子面层:Tin/Lead (Sn/Pb)端子形式:WRAP AROUND
端子位置:END处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

JANTXV1N6141US 数据手册

 浏览型号JANTXV1N6141US的Datasheet PDF文件第2页 

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