是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 零件包装代码: | DIP |
针数: | 14 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
风险等级: | 5.2 | Is Samacsys: | N |
最大集电极电流 (IC): | 0.6 A | 集电极-发射极最大电压: | 60 V |
配置: | SEPARATE, 4 ELEMENTS | 最小直流电流增益 (hFE): | 50 |
JEDEC-95代码: | TO-116 | JESD-30 代码: | R-XDIP-T14 |
JESD-609代码: | e0 | 元件数量: | 4 |
端子数量: | 14 | 最高工作温度: | 200 °C |
最低工作温度: | -65 °C | 封装主体材料: | UNSPECIFIED |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | PNP |
认证状态: | Qualified | 参考标准: | MIL-19500/558D |
子类别: | Other Transistors | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | THROUGH-HOLE |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
2N6987 | MICROSEMI |
完全替代 ![]() |
MULTIPLE (QUAD) PNP SILICON SWITCHING TRANSISTOR |
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JANS2N6987 | MICROSEMI |
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Power Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 4-Element, PNP, Silicon, Ceramic, Glass |
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JANTX2N6987 | RAYTHEON |
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Small Signal Bipolar Transistor, 4-Element, PNP, Silicon, TO-116, |
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型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JANTX2N6987U | ETC |
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TRANSISTOR | BJT | ARRAY | INDEPENDENT | 60V V(BR)CEO | 600MA I(C) | LLCC |
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JANTX2N6988 | RAYTHEON |
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Small Signal Bipolar Transistor, 4-Element, PNP, Silicon, TO-86, |
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JANTX2N6988 | MICROSEMI |
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Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 4-Element, PNP, Silicon, CERAMIC |
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JANTX2N6989 | RAYTHEON |
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Small Signal Bipolar Transistor, 4-Element, NPN, Silicon, TO-116, |
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JANTX2N6989U |
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Surface Mount Quad NPN Transistor |
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JANTX2N6990 | RAYTHEON |
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Small Signal Bipolar Transistor, 4-Element, NPN, Silicon, TO-86, |
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JANTX2N6990U | ETC |
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BJT |
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JANTX2N718A | MICROSEMI |
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NPN LOW POWER SILICON TRANSISTOR |
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JANTX2N720A | MICROSEMI |
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NPN LOW POWER SILICON TRANSISTOR |
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JANTX2N7218 | INFINEON |
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HEXFET TRANSISTOR |
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