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JANTX2N7218U

更新时间： 2024-02-01 17:13:49
品牌 Logo 应用领域
英飞凌 - INFINEON 开关脉冲晶体管
页数 文件大小 规格书
24页 349K
描述
Power Field-Effect Transistor, 28A I(D), 100V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD1, 3 PIN

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JANTX2N7218U 技术参数

是否Rohs认证： 不符合生命周期：Active
包装说明：HERMETIC SEALED, SMD1, 3 PINReach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.17
Is Samacsys：N其他特性：HIGH RELIABILITY
雪崩能效等级（Eas）：250 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：100 V
最大漏极电流 (Abs) (ID)：28 A最大漏极电流 (ID)：28 A
最大漏源导通电阻：0.125 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-CBCC-N3JESD-609代码：e0
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：CERAMIC, METAL-SEALED COFIRED封装形状：RECTANGULAR
封装形式：CHIP CARRIER峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：125 W
最大脉冲漏极电流 (IDM)：112 A认证状态：Qualified
参考标准：MIL-19500/596子类别：FET General Purpose Power
表面贴装：YES端子面层：Tin/Lead (Sn/Pb)
端子形式：NO LEAD端子位置：BOTTOM
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

JANTX2N7218U 数据手册

 浏览型号JANTX2N7218U的Datasheet PDF文件第2页浏览型号JANTX2N7218U的Datasheet PDF文件第3页浏览型号JANTX2N7218U的Datasheet PDF文件第4页浏览型号JANTX2N7218U的Datasheet PDF文件第5页浏览型号JANTX2N7218U的Datasheet PDF文件第6页浏览型号JANTX2N7218U的Datasheet PDF文件第7页 
INCH-POUND  
The documentation and process conversion  
measures necessary to comply with this revision  
shall be completed by 1 June 2013.  
MIL-PRF-19500/596K  
17 April 2013  
SUPERSEDING  
MIL-PRF-19500/596J  
14 April 2009  
PERFORMANCE SPECIFICATION SHEET  
SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT,  
TRANSISTOR, N-CHANNEL, SILICON,  
TYPES 2N7218, 2N7219, 2N7221, 2N7222, 2N7218U, 2N7219U,  
2N7221U, AND 2N7222U, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC  
This specification is approved for use by all Departments  
and Agencies of the Department of Defense.  
The requirements for acquiring the product described herein shall consist of  
this specification sheet and MIL-PRF-19500.  
1. SCOPE  
1.1 Scope. This specification covers the performance requirements for a N-channel, enhancement mode,  
MOSFET, power transistor intended for use in high density power switching applications. Four levels of product  
assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum  
ratings (EAR and EAS) and maximum avalanche current IAR. Two levels of product assurance are provided for die  
(element evaluation).  
1.2 Physical dimensions. See figure 1 (TO-254AA), figure 2 for JANHC and JANKC (die) dimensions, and figure 3  
for surface mount (TO-267AB).  
1.3 Maximum ratings. Unless otherwise specified, TC = +25°C.  
Type  
PT (1)  
PT  
V(BR)DSS min ID1 (3) (4) ID2 (3) (4)  
IS  
IDM  
(5)  
TJ  
Rθ  
JC  
TC =  
+25°C  
W
TA =  
+25°C  
W
(2)  
VGS = 0  
ID = 1.0 mA dc  
V dc  
TC =  
+25°C  
A dc  
TC =  
+100°C  
A dc  
and  
TSTG  
°C  
A dc A (pk)  
°C/W  
2N7218, 2N7218U  
2N7219, 2N7219U  
2N7221, 2N7221U  
2N7222, 2N7222U  
125  
125  
125  
125  
4
4
4
4
100  
200  
400  
500  
28  
18  
10  
8
20  
11  
6
28  
18  
10  
8
112  
72  
40  
1.0  
1.0  
1.0  
1.0  
-55 to +150  
-55 to +150  
-55 to +150  
-55 to +150  
5
32  
See notes next page.  
Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,  
Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to  
Semiconductor@dla.mil. Since contact information can change, you may want to verify the currency of this  
address information using the ASSIST Online database at https://assist.dla.mil/.  
*
AMSC N/A  
FSC 5961  
1234567...24

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JANTX2N7218U 替代型号

型号 品牌 替代类型 描述 数据表
JANTXV2N7224U INFINEON

类似代替

 100V Single N-Channel Hi-Rel MOSFET in a SMD-1 package - A JANTXV2N7224U with Hermetic Pac
JANTX2N7224U INFINEON

类似代替

 100V Single N-Channel Hi-Rel MOSFET in a SMD-1 package - A JANTX2N7224U with Hermetic Pack
2N7224 MICROSEMI

功能相似

 N-CHANNEL MOSFET

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JANTX2N7219 INFINEON

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JANTX2N7219D INFINEON

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 		Power Field-Effect Transistor, 18A I(D), 200V, 0.25ohm, 1-Element, N-Channel, Silicon, Met
JANTX2N7219U INFINEON

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JANTX2N7221 INFINEON

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 		400V Single N-Channel Hi-Rel MOSFET in a TO-254AA package - A JANTX2N7221 with Hermetic Pa
JANTX2N7221U INFINEON

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 		Power Field-Effect Transistor, 10A I(D), 400V, 0.7ohm, 1-Element, N-Channel, Silicon, Meta
JANTX2N7221UPBF INFINEON

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 		Power Field-Effect Transistor, 10A I(D), 400V, 0.7ohm, 1-Element, N-Channel, Silicon, Meta
JANTX2N7222 INFINEON

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 		POWER MOSFET THRU-HOLE (TO-254AA)
JANTX2N7222D INFINEON

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 		Power Field-Effect Transistor, 8A I(D), 500V, 0.95ohm, 1-Element, N-Channel, Silicon, Meta
JANTX2N7222U INFINEON

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 		500V Single N-Channel Hi-Rel MOSFET in a SMD-1 package - A JANTX2N7222U with Hermetic Pack
JANTX2N7224 INFINEON

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 		REPETITIVE AVALANCHE RATED AND dv/dt RATED

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