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JANTX2N7219U

更新时间： 2023-06-19 14:26:20
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
24页 349K
描述
200V Single N-Channel Hi-Rel MOSFET in a SMD-1 package - A JANTX2N7219U with Hermetic Packaging

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中文翻译

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JANTX2N7219U 技术参数

是否Rohs认证： 不符合生命周期：Active
包装说明：HERMETIC SEALED, SMD1, 3 PINReach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.15
Is Samacsys：N其他特性：HIGH RELIABILITY
雪崩能效等级（Eas）：450 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：200 V
最大漏极电流 (Abs) (ID)：18 A最大漏极电流 (ID)：18 A
最大漏源导通电阻：0.25 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-CBCC-N3JESD-609代码：e0
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE封装主体材料：CERAMIC, METAL-SEALED COFIRED
封装形状：RECTANGULAR封装形式：CHIP CARRIER
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：125 W最大脉冲漏极电流 (IDM)：72 A
认证状态：Qualified参考标准：MIL-19500/596
子类别：FET General Purpose Power表面贴装：YES
端子面层：Tin/Lead (Sn/Pb)端子形式：NO LEAD
端子位置：BOTTOM处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

JANTX2N7219U 数据手册

 浏览型号JANTX2N7219U的Datasheet PDF文件第2页浏览型号JANTX2N7219U的Datasheet PDF文件第3页浏览型号JANTX2N7219U的Datasheet PDF文件第4页浏览型号JANTX2N7219U的Datasheet PDF文件第5页浏览型号JANTX2N7219U的Datasheet PDF文件第6页浏览型号JANTX2N7219U的Datasheet PDF文件第7页 
INCH-POUND  
The documentation and process conversion  
measures necessary to comply with this revision  
shall be completed by 1 June 2013.  
MIL-PRF-19500/596K  
17 April 2013  
SUPERSEDING  
MIL-PRF-19500/596J  
14 April 2009  
PERFORMANCE SPECIFICATION SHEET  
SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT,  
TRANSISTOR, N-CHANNEL, SILICON,  
TYPES 2N7218, 2N7219, 2N7221, 2N7222, 2N7218U, 2N7219U,  
2N7221U, AND 2N7222U, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC  
This specification is approved for use by all Departments  
and Agencies of the Department of Defense.  
The requirements for acquiring the product described herein shall consist of  
this specification sheet and MIL-PRF-19500.  
1. SCOPE  
1.1 Scope. This specification covers the performance requirements for a N-channel, enhancement mode,  
MOSFET, power transistor intended for use in high density power switching applications. Four levels of product  
assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum  
ratings (EAR and EAS) and maximum avalanche current IAR. Two levels of product assurance are provided for die  
(element evaluation).  
1.2 Physical dimensions. See figure 1 (TO-254AA), figure 2 for JANHC and JANKC (die) dimensions, and figure 3  
for surface mount (TO-267AB).  
1.3 Maximum ratings. Unless otherwise specified, TC = +25°C.  
Type  
PT (1)  
PT  
V(BR)DSS min ID1 (3) (4) ID2 (3) (4)  
IS  
IDM  
(5)  
TJ  
Rθ  
JC  
TC =  
+25°C  
W
TA =  
+25°C  
W
(2)  
VGS = 0  
ID = 1.0 mA dc  
V dc  
TC =  
+25°C  
A dc  
TC =  
+100°C  
A dc  
and  
TSTG  
°C  
A dc A (pk)  
°C/W  
2N7218, 2N7218U  
2N7219, 2N7219U  
2N7221, 2N7221U  
2N7222, 2N7222U  
125  
125  
125  
125  
4
4
4
4
100  
200  
400  
500  
28  
18  
10  
8
20  
11  
6
28  
18  
10  
8
112  
72  
40  
1.0  
1.0  
1.0  
1.0  
-55 to +150  
-55 to +150  
-55 to +150  
-55 to +150  
5
32  
See notes next page.  
Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,  
Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to  
Semiconductor@dla.mil. Since contact information can change, you may want to verify the currency of this  
address information using the ASSIST Online database at https://assist.dla.mil/.  
*
AMSC N/A  
FSC 5961  
1234567...24

中文翻译

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JANTX2N7219U 替代型号

型号 品牌 替代类型 描述 数据表
IRFM240 INFINEON

完全替代

 POWER MOSFET THRU-HOLE (TO-254AA)
IRFN240 INFINEON

完全替代

 POWER MOSFET N-CHANNEL(BVdss=200V, Rds(on)=0.18ohm, Id=18A)
IRFM250 INFINEON

功能相似

 POWER MOSFET THRU-HOLE (TO-254AA)

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