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JANTX1N6809UEG2

更新时间： 2024-11-28 19:43:03
品牌 Logo 应用领域
威世 - VISHAY 光电二极管
页数 文件大小 规格书
3页 85K
描述
Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon

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中文翻译

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JANTX1N6809UEG2 技术参数

生命周期：Obsolete零件包装代码：DO-214BA
包装说明：R-PDSO-C2针数：2
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.80风险等级：5.84
其他特性：METALLURGICALLY BONDED配置：SINGLE
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
JESD-30 代码：R-PDSO-C2元件数量：1
端子数量：2最大输出电流：1 A
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE认证状态：Not Qualified
最大重复峰值反向电压：800 V最大反向恢复时间：2 µs
表面贴装：YES端子形式：C BEND
端子位置：DUALBase Number Matches：1

JANTX1N6809UEG2 数据手册

 浏览型号JANTX1N6809UEG2的Datasheet PDF文件第2页浏览型号JANTX1N6809UEG2的Datasheet PDF文件第3页 
JAN1N6804UEG2 thru JAN1N6810UEG2  
Patented*  
Vishay Semiconductors  
formerly  
Glass Passivated Rectifiers  
Reverse Voltage 50 to 1000V  
Forward Current 1.0A  
DO-214BA (UEG2)  
1.7  
1.0  
Mounting Pad Layout  
4.8  
3.95  
0.066 MIN.  
(1.68 MIN.)  
0.094 MAX.  
(2.38 MAX.)  
.41  
.15  
3.3  
2.3  
3.5  
2.35  
0.052 MIN.  
(1.32 MIN.)  
0.220  
(5.58) REF  
3.3  
2.0  
0.005 (0.2 max)  
1.60  
0.75  
5.85  
4.95  
Dimensions in millimeters  
Features  
Glass-plastic encapsulation technique is covered by  
Patent No. 3,996,602, brazen-lead assembly by Patent No. 3,930,306  
and lead forming by Patent No. 5,151,846  
• Qualified to MIL-PRF-19500/669  
• Class 1 high temperature metallurgically bonded  
construction brazed > 600°C  
• Cavity-free, glass passivated junction. In epoxy over  
hermetic glass.  
Mechanical Data  
Case: DO-214BA, molded epoxy over glass body (UEG2)  
Terminals: Solder plated, solderable per MIL-STD-750,  
• High temperature soldering guaranteed:  
450°C/5 seconds at teminals  
Method 2026  
Polarity: Color band denotes cathode end  
• Ideal for surface mount applications • Typical IR < 0.1µA  
• Built-in strain relief • Easy pick and place  
Mounting Position: Any  
Weight: 0.0048oz, 0.120g  
• Complete device submersible temperature of 265°C for  
10 seconds in solder bath  
Flammability: Epoxy is rated UL 94V-0.  
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.  
Prefix J = JAN Quality Level; Prefix JX = JANTX Quality Level  
Parameter  
Symb.  
J
J
J
J
J
J
J
Unit  
1N6804 1N6805 1N6806 1N6807 1N6808 1N6809 1N6810  
Device marking code  
JA  
JB  
100  
70  
JC  
JD  
400  
280  
400  
1.0  
JE  
JF  
800 1000  
560 700  
800 1000  
JG  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM 50  
VRMS 35  
200  
140  
200  
600  
420  
600  
V
V
V
A
Maximum DC blocking voltage  
VDC  
50  
100  
Maximum average forward rectified current at TL = 125°C  
IF(AV)  
Peak forward surge current 10 surges of 8.3ms each at  
1 min. intervals (per MIL-STD-750 m 4066) super-imposed  
on IO = 750mA DC; VR = rated VRRM, TA = 100°C  
IFSM  
25  
A
RθJL  
RθJA  
25  
80  
Typical thermal resistance(1)  
°C/W  
°C  
Operating junction and storage temperature range  
Barometric Pressure  
TJ,TSTG  
–55 to +175  
Hg  
8
33  
Note: (1) Thermal resistance measured with devices P.C.B. mounted on 0.2 x 0.2” (5.0 x 5.0mm) copper pad areas.  
Document Number 88654  
26-Mar-02  
www.vishay.com  
1
123

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