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JANTX1N4947 PDF预览

JANTX1N4947

更新时间： 2024-09-08 12:09:27
品牌 Logo 应用领域
美高森美 - MICROSEMI 整流二极管快速恢复二极管
页数 文件大小 规格书
2页 268K
描述
VOIDLESS-HERMETICALLY SEALED FAST RECOVERY GLASS RECTIFIERS

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中文翻译

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JANTX1N4947 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：DO-41包装说明：O-XALF-W2
针数：2Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.10.00.80
风险等级：5.33Is Samacsys：N
其他特性：METALLURGICALLY BONDED外壳连接：ISOLATED
配置：SINGLE二极管元件材料：SILICON
二极管类型：RECTIFIER DIODE最大正向电压 (VF)：1.2 V
JESD-30 代码：O-XALF-W2JESD-609代码：e0
元件数量：1端子数量：2
最高工作温度：175 °C最低工作温度：-65 °C
最大输出电流：1 A封装主体材料：UNSPECIFIED
封装形状：ROUND封装形式：LONG FORM
峰值回流温度（摄氏度）：NOT SPECIFIED认证状态：Not Qualified
参考标准：MIL-19500/359F最大重复峰值反向电压：800 V
最大反向恢复时间：0.25 µs子类别：Rectifier Diodes
表面贴装：NO端子面层：TIN LEAD
端子形式：WIRE端子位置：AXIAL
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

JANTX1N4947 数据手册

 浏览型号JANTX1N4947的Datasheet PDF文件第2页 
1N4942 thru 1N4948  
VOIDLESS-HERMETICALLY SEALED  
FAST RECOVERY GLASS RECTIFIERS  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
This “fast recovery” rectifier diode series is military qualified to MIL-PRF-19500/359  
and is ideal for high-reliability applications where a failure cannot be tolerated.  
These industry-recognized 1.0 Amp rated rectifiers for working peak reverse  
voltages from 200 to 1000 volts are hermetically sealed with voidless-glass  
construction using an internal “Category I” metallurgical bond. These devices are  
similar in ratings to the 1N5615 thru 1N5623 series where surface mount MELF  
package configurations are also available by adding a “US” suffix (see separate  
data sheet for 1N5615US thru 1N5623US). Microsemi also offers numerous other  
rectifier products to meet higher and lower current ratings with various recovery time  
speed requirements including fast and ultrafast device types in both through-hole  
and surface mount packages.  
“A” Package  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
• Popular JEDEC registered 1N4942 to 1N4948 series  
• Voidless hermetically sealed glass package  
• Triple-Layer Passivation  
• Internal “Category I” Metallurgical bonds  
• Working Peak Reverse Voltage 200 to 1000 Volts.  
•
Fast recovery 1 Amp rectifiers 200 to 1000 V  
•
•
Military and other high-reliability applications  
General rectifier applications including bridges, half-  
bridges, catch diodes, etc.  
•
•
•
High forward surge current capability  
Extremely robust construction  
• JAN, JANTX, and JANTXV available per MIL-PRF-  
Low thermal resistance  
19500/359 (for JANS, see 1N5615 thru 1N5623)  
•
Controlled avalanche with peak reverse power  
• Surface mount equivalents also available in a square  
end-cap MELF configuration with “US” suffix (see  
separate data sheet for 1N5615US thru 1N5623US)  
capability  
•
Inherently radiation hard as described in Microsemi  
MicroNote 050  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
• Junction & Storage Temperature: -65oC to +175oC  
•
•
CASE: Hermetically sealed voidless hard glass with  
• Thermal Resistance: 38oC/W junction to lead at 3/8  
Tungsten slugs  
inch (10 mm) lead length from body  
TERMINATIONS: Axial leads are copper with  
Tin/Lead (Sn/Pb) finish  
• Thermal Impedance: 4.5oC/W @ 10 ms heating time  
•
•
•
•
•
MARKING: Body paint and part number, etc.  
POLARITY: Cathode band  
TAPE & REEL option: Standard per EIA-296  
WEIGHT: 340 mg  
• Average Rectified Forward Current (IO): 1.0 Amps @  
TA = 55ºC and 0.750 Amps at TA = 100ºC  
• Forward Surge Current: 15 Amps @ 8.3 ms half-sine  
• Solder Temperatures: 260ºC for 10 s (maximum)  
See package dimensions on last page  
ELECTRICAL CHARACTERISTICS  
WORKING  
AVERAGE  
RECTIFIED  
CURRENT  
MAXIMUM  
FORWARD  
VOLTAGE  
MAXIMUM  
MINIMUM  
BREAKDOWN  
VOLTAGE  
MAXIMUM  
SURGE  
MAXIMUM  
REVERSE  
Maximum  
PEAK  
REVERSE  
CURRENT  
CAPACITANCE  
REVERSE  
VOLTAGE  
VRWM  
TYPE  
CURRENT RECOVERY  
(NOTE 1)  
IFSM  
AMPS  
(NOTE 2)  
trr  
ns  
C @ -12V  
pF  
BV @ 50µA  
IO  
VF @ 1 A  
VOLTS  
IR @ VRWM  
VOLTS  
VOLTS  
AMPS  
µA  
55oC  
100oC  
25oC  
150oC  
JAN1N4942  
JAN1N4944  
JAN1N4946  
JAN1N4947  
JAN1N4948  
200  
400  
220  
440  
660  
880  
1.00  
1.00  
1.00  
1.00  
1.00  
.750  
.750  
.750  
.750  
.750  
1.3  
1.3  
1.3  
1.3  
1.3  
1.0  
1.0  
1.0  
1.0  
200  
200  
200  
200  
45  
35  
25  
20  
15  
15  
15  
15  
15  
15  
150  
150  
250  
250  
500  
600  
800  
1000  
NOTE 1: TA = 100oC, 8.3 m1s1s00urges  
NOTE 2: IF = 0.5A, I 1.0= 1A,2I0R0(REC) = .250A  
RM  
Copyright 2004  
Microsemi  
Page 1  
12-08-2004 REV A  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
12

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JANTX1N4947 替代型号

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