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JANS1N6462US

更新时间: 2024-09-13 14:51:43
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网二极管
页数 文件大小 规格书
1页 111K
描述
Trans Voltage Suppressor Diode, 500W, 6V V(RWM), Unidirectional, 1 Element, Silicon, GLASS, MELF-2

JANS1N6462US 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:Obsolete零件包装代码:MELF
包装说明:O-MELF-R2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.84
Is Samacsys:N其他特性:METALLURGICALLY BODED
最小击穿电压:6.5 V外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码:O-MELF-R2
JESD-609代码:e0最大非重复峰值反向功率耗散:500 W
元件数量:1端子数量:2
封装主体材料:METAL封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
极性:UNIDIRECTIONAL最大功率耗散:5 W
认证状态:Not Qualified参考标准:MIL-19500/551
最大重复峰值反向电压:6 V表面贴装:YES
技术:AVALANCHE端子面层:TIN LEAD
端子形式:WRAP AROUND端子位置:END
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

JANS1N6462US 数据手册

  

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