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JANHCA1N5526B PDF预览

JANHCA1N5526B

更新时间: 2024-11-03 07:16:19
品牌 Logo 应用领域
CDI-DIODE /
页数 文件大小 规格书
19页 141K
描述
Zener Diode, 6.8V V(Z), 5%, 0.5W, Silicon, Unidirectional, DIE-2

JANHCA1N5526B 数据手册

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INCH POUND  
The documentation and process conversion  
measures necessary to comply with this revision  
shall be completed by 18 January 2005.  
MIL-PRF-19500/437E  
18 October 2004  
SUPERSEDING  
MIL-PRF-19500/437D  
15 September 1997  
PERFORMANCE SPECIFICATION SHEET  
SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW-NOISE VOLTAGE REGULATOR TYPES,  
1N5518B-1, 1N5518C-1, 1N5518D-1 THROUGH 1N5546B-1, 1N5546C-1, 1N5546D-1,  
1N5518BUR-1, 1N5518CUR-1, 1N5518DUR-1 THROUGH 1N5546BUR-1, 1N5546CUR-1, 1N5546DUR-1  
JAN, JANTX, JANTXV, JANHC, AND JANKC  
This specification is approved for use by all Departments  
and Agencies of the Department of Defense.  
*
The requirements for acquiring the product described herein shall consist of  
this specification sheet and MIL-PRF-19500.  
1. SCOPE  
1.1 Scope. This specification covers the performance requirements for 500 milliwatt, silicon, low-noise, voltage  
regulator diodes with voltage tolerances of 5 percent, 2 percent, and 1 percent. Three levels of product assurance  
are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance  
for each unencapsulated device type die. For JANHC and JANKC quality levels (see 6.5).  
1.2 Physical dimensions. See figures 1 (DO-7 and DO-35), 2 (DO-213AA), and 3 (JANHC and JANKC).  
* 1.3 Maximum ratings. Maximum ratings are shown in 3.8 herein and as follows:  
a.  
P = 500 mW (DO-7 and D0-35) at T = +50°C, L = .375 inch (9.53 mm); both ends of case or  
T L  
diode body to heat sink at L = .375 inch (9.53 mm). (Derate I to 0.0 mA dc at +175°C).  
Z
b.  
P
= 500 mW (D0-213AA) at T  
= +125°C. (Derate to 0 at +175°C).  
+175°C; -65°C T +175°C.  
T
EC  
c. -65°C T  
J
STG  
* 1.4 Primary electrical characteristics. Primary electrical characteristic see 3.8 herein and as follows:  
a. 3.3 V dc V 33 V dc.  
z
b.  
c.  
R
= 250°C/W (maximum) at L = .375 inch (9.53 mm) (D0-7 and D0-35).  
θJL  
R
θJEC  
= 100°C/W (maximum) junction to end-caps (D0-213AA).  
d. For derating see figures 4 and 5.  
Comments, suggestions, or questions on this document should be addressed to Defense Supply Center, Columbus,  
ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dscc.dla.mil. Since  
contact information can change, you may want to verify the currency of this address information using the ASSIST  
Online database at http://www.dodssp.daps.mil.  
AMSC N/A  
FSC 5961  

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