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JANHCA1N5527C PDF预览

JANHCA1N5527C

更新时间： 2024-11-02 14:30:07
品牌 Logo 应用领域
CDI-DIODE 测试二极管
页数 文件大小 规格书
19页 141K
描述
Zener Diode, 7.5V V(Z), 2%, 0.5W, Silicon, Unidirectional, DIE-2

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JANHCA1N5527C 技术参数

生命周期：Obsolete包装说明：S-XXUC-N2
Reach Compliance Code：unknown风险等级：5.76
Is Samacsys：N其他特性：METALLURGICALLY BONDED
外壳连接：CATHODE配置：SINGLE
二极管元件材料：SILICON二极管类型：ZENER DIODE
JESD-30 代码：S-XXUC-N2元件数量：1
端子数量：2封装主体材料：UNSPECIFIED
封装形状：SQUARE封装形式：UNCASED CHIP
极性：UNIDIRECTIONAL最大功率耗散：0.5 W
认证状态：Not Qualified参考标准：MIL-19500/437E
标称参考电压：7.5 V表面贴装：YES
技术：ZENER端子形式：NO LEAD
端子位置：UNSPECIFIED最大电压容差：2%
工作测试电流：1 mABase Number Matches：1

JANHCA1N5527C 数据手册

 浏览型号JANHCA1N5527C的Datasheet PDF文件第2页浏览型号JANHCA1N5527C的Datasheet PDF文件第3页浏览型号JANHCA1N5527C的Datasheet PDF文件第4页浏览型号JANHCA1N5527C的Datasheet PDF文件第5页浏览型号JANHCA1N5527C的Datasheet PDF文件第6页浏览型号JANHCA1N5527C的Datasheet PDF文件第7页 
INCH POUND  
The documentation and process conversion  
measures necessary to comply with this revision  
shall be completed by 18 January 2005.  
MIL-PRF-19500/437E  
18 October 2004  
SUPERSEDING  
MIL-PRF-19500/437D  
15 September 1997  
PERFORMANCE SPECIFICATION SHEET  
SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW-NOISE VOLTAGE REGULATOR TYPES,  
1N5518B-1, 1N5518C-1, 1N5518D-1 THROUGH 1N5546B-1, 1N5546C-1, 1N5546D-1,  
1N5518BUR-1, 1N5518CUR-1, 1N5518DUR-1 THROUGH 1N5546BUR-1, 1N5546CUR-1, 1N5546DUR-1  
JAN, JANTX, JANTXV, JANHC, AND JANKC  
This specification is approved for use by all Departments  
and Agencies of the Department of Defense.  
*
The requirements for acquiring the product described herein shall consist of  
this specification sheet and MIL-PRF-19500.  
1. SCOPE  
1.1 Scope. This specification covers the performance requirements for 500 milliwatt, silicon, low-noise, voltage  
regulator diodes with voltage tolerances of 5 percent, 2 percent, and 1 percent. Three levels of product assurance  
are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance  
for each unencapsulated device type die. For JANHC and JANKC quality levels (see 6.5).  
1.2 Physical dimensions. See figures 1 (DO-7 and DO-35), 2 (DO-213AA), and 3 (JANHC and JANKC).  
* 1.3 Maximum ratings. Maximum ratings are shown in 3.8 herein and as follows:  
a.  
P = 500 mW (DO-7 and D0-35) at T = +50°C, L = .375 inch (9.53 mm); both ends of case or  
T L  
diode body to heat sink at L = .375 inch (9.53 mm). (Derate I to 0.0 mA dc at +175°C).  
Z
b.  
P
= 500 mW (D0-213AA) at T  
= +125°C. (Derate to 0 at +175°C).  
≤ +175°C; -65°C ≤ T ≤ +175°C.  
T
EC  
c. -65°C ≤ T  
J
STG  
* 1.4 Primary electrical characteristics. Primary electrical characteristic see 3.8 herein and as follows:  
a. 3.3 V dc ≤ V ≤ 33 V dc.  
z
b.  
c.  
R
= 250°C/W (maximum) at L = .375 inch (9.53 mm) (D0-7 and D0-35).  
θJL  
R
θJEC  
= 100°C/W (maximum) junction to end-caps (D0-213AA).  
d. For derating see figures 4 and 5.  
Comments, suggestions, or questions on this document should be addressed to Defense Supply Center, Columbus,  
ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dscc.dla.mil. Since  
contact information can change, you may want to verify the currency of this address information using the ASSIST  
Online database at http://www.dodssp.daps.mil.  
AMSC N/A  
FSC 5961  
1234567...19

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