Datasheet > JANHCA1N5542D

JANHCA1N5542D

更新时间： 2024-11-03 09:28:35

品牌	Logo	应用领域
CDI-DIODE		/
页数	文件大小	规格书
19页	141K
描述
Zener Diode, 24V V(Z), 1%, 0.5W, Silicon, Unidirectional, DIE-2

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The documentation and process conversion

measures necessary to comply with this revision

shall be completed by 18 January 2005.

MIL-PRF-19500/437E

18 October 2004

SUPERSEDING

MIL-PRF-19500/437D

15 September 1997

PERFORMANCE SPECIFICATION SHEET

SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW-NOISE VOLTAGE REGULATOR TYPES,

1N5518B-1, 1N5518C-1, 1N5518D-1 THROUGH 1N5546B-1, 1N5546C-1, 1N5546D-1,

1N5518BUR-1, 1N5518CUR-1, 1N5518DUR-1 THROUGH 1N5546BUR-1, 1N5546CUR-1, 1N5546DUR-1

JAN, JANTX, JANTXV, JANHC, AND JANKC

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

The requirements for acquiring the product described herein shall consist of

this specification sheet and MIL-PRF-19500.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for 500 milliwatt, silicon, low-noise, voltage

regulator diodes with voltage tolerances of 5 percent, 2 percent, and 1 percent. Three levels of product assurance

are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance

for each unencapsulated device type die. For JANHC and JANKC quality levels (see 6.5).

1.2 Physical dimensions. See figures 1 (DO-7 and DO-35), 2 (DO-213AA), and 3 (JANHC and JANKC).

* 1.3 Maximum ratings. Maximum ratings are shown in 3.8 herein and as follows:

P = 500 mW (DO-7 and D0-35) at T = +50°C, L = .375 inch (9.53 mm); both ends of case or

T L

diode body to heat sink at L = .375 inch (9.53 mm). (Derate I to 0.0 mA dc at +175°C).

= 500 mW (D0-213AA) at T

= +125°C. (Derate to 0 at +175°C).

≤ +175°C; -65°C ≤ T ≤ +175°C.

c. -65°C ≤ T

STG

* 1.4 Primary electrical characteristics. Primary electrical characteristic see 3.8 herein and as follows:

a. 3.3 V dc ≤ V ≤ 33 V dc.

= 250°C/W (maximum) at L = .375 inch (9.53 mm) (D0-7 and D0-35).

θJL

θJEC

= 100°C/W (maximum) junction to end-caps (D0-213AA).

d. For derating see figures 4 and 5.

Comments, suggestions, or questions on this document should be addressed to Defense Supply Center, Columbus,

ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dscc.dla.mil. Since

contact information can change, you may want to verify the currency of this address information using the ASSIST

Online database at http://www.dodssp.daps.mil.

AMSC N/A

FSC 5961

12 3 4 5 6 7...19

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与JANHCA1N5542D相关器件

型号	品牌	获取价格	描述	数据表
JANHCA1N5543B	CDI-DIODE	获取价格	Zener Diode, 25V V(Z), 5%, 0.5W, Silicon, Unidirectional, DIE-2
JANHCA1N5544B	CDI-DIODE	获取价格	Zener Diode, 28V V(Z), 5%, 0.5W, Silicon, Unidirectional, DIE-2
JANHCA1N5546B	CDI-DIODE	获取价格	Zener Diode, 33V V(Z), 5%, 0.5W, Silicon, Unidirectional, DIE-2
JANHCA1N5550	ETC	获取价格	This specification covers the performance requirements for silicon, general purpose,
JANHCA1N5551	ETC	获取价格	This specification covers the performance requirements for silicon, general purpose,
JANHCA1N5552	ETC	获取价格	This specification covers the performance requirements for silicon, general purpose,
JANHCA1N5553	ETC	获取价格	This specification covers the performance requirements for silicon, general purpose,
JANHCA1N5554	ETC	获取价格	This specification covers the performance requirements for silicon, general purpose,
JANHCA1N5636A	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 11.1V V(RWM), Unidirectional, 1 Element, Silicon, D
JANHCA1N5652A	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 53V V(RWM), Unidirectional, 1 Element, Silicon, DO-

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