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JAN1N6472US

更新时间： 2024-11-11 14:51:43
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网二极管
页数 文件大小 规格书
3页 220K
描述
Trans Voltage Suppressor Diode, 1500W, 15V V(RWM), Unidirectional, 1 Element, Silicon, GLASS PACKAGE-2

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JAN1N6472US 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Active零件包装代码：MELF
包装说明：O-LELF-R2针数：2
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.10.00.50风险等级：5.65
最小击穿电压：16.4 V外壳连接：ISOLATED
配置：SINGLE二极管元件材料：SILICON
二极管类型：TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码：O-LELF-R2
JESD-609代码：e0最大非重复峰值反向功率耗散：1500 W
元件数量：1端子数量：2
封装主体材料：GLASS封装形状：ROUND
封装形式：LONG FORM峰值回流温度（摄氏度）：NOT SPECIFIED
极性：UNIDIRECTIONAL最大功率耗散：3 W
认证状态：Qualified参考标准：MIL-19500/552C
最大重复峰值反向电压：15 V表面贴装：YES
技术：AVALANCHE端子面层：Tin/Lead (Sn/Pb)
端子形式：WRAP AROUND端子位置：END
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

JAN1N6472US 数据手册

 浏览型号JAN1N6472US的Datasheet PDF文件第2页浏览型号JAN1N6472US的Datasheet PDF文件第3页 
1N6469US thru 1N6476US  
Voidless-Hermetically-Sealed Surface  
Mount Unidirectional Transient  
Suppressors  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
This surface mount series of industry recognized voidless-hermetically-sealed  
Unidirectional Transient Voltage Suppressor (TVS) designs is military qualified to MIL-  
PRF-19500/552 and are ideal for high-reliability applications where a failure cannot be  
tolerated. They provide a Working Peak “Standoff” Voltage selection from 5.0 to 51.6  
Volts with 1500 W ratings. They are very robust in hard-glass construction and also  
use an internal metallurgical bond identified as Category I for high reliability  
applications. The 1500 W series is military qualified to MIL-PRF-19500/552. These  
devices are also available in axial-leaded packages for thru-hole mounting by deleting  
the “US” suffix (see separate data sheet for 1N6469 thru 1N6476A). Microsemi also  
offers numerous other TVS products to meet higher and lower peak pulse power and  
voltage ratings in both through-hole and surface-mount packages.  
Package “G”  
(or “D-5C”)  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
•
High surge current and peak pulse power provides  
•
•
•
Military and other high reliability transient protection  
Extremely robust construction  
transient voltage protection for sensitive circuits  
•
•
•
•
Triple-layer passivation  
Internal “Category I” metallurgical bonds  
Voidless hermetically sealed glass package  
JAN/TX/TXV military qualifications available per MIL-  
PRF-19500/552 by adding JAN, JANTX, or JANTXV  
prefix  
Further options for screening in accordance with MIL-  
PRF-19500 for JANS by using a “MSP” prefix, e.g.  
MSP6469, MSP6476, etc.  
Working Peak “Standoff” Voltage (VWM) from 5.0 to  
51.6 V  
•
•
Available as 1500 W Peak Pulse Power (PPP)  
ESD and EFT protection per IEC61000-4-2 and  
IEC61000-4-4 respectively  
•
Secondary lightning protection per select levels in  
IEC61000-4-5  
Square-end-cap terminals for easy mounting  
•
•
•
•
Nonsensitive to ESD per MIL-STD-750 Method  
Axial-leaded equivalents are also available (see  
1020  
separate data sheet for 1N6469 thru 1N6476)  
•
Inherently radiation hard as described in Microsemi  
MicroNote 050  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
•
•
Operating & Storage Temperature: -55oC to +175oC  
•
•
CASE: Hermetically sealed voidless hard glass  
Peak Pulse Power at 25oC: 1500 Watts @ 10/1000 µs  
(also see Figures 1,2 and 4)  
Impulse repetition rate (duty factor): 0.01%  
with Tungsten slugs  
TERMINATIONS: Axial-leads are Tin/Lead (Sn/Pb)  
over copper  
MARKING: Body painted and part number, etc.  
POLARITY: Cathode band  
Tape & Reel option: Standard per EIA-481-B  
Weight: 1100 mg  
See package dimensions on last page  
•
•
•
•
•
•
•
Forward Surge Current: 130 Amps@ 8.33 ms one-  
half sine wave  
•
•
Forward Voltage: 1.5 V @ 4 Amps dc and 4.8 V at  
100 Amps (pulsed)  
Steady-State Power: 3.0 W @ TA = 25oC (see note  
below and Figure 4)  
•
•
Thermal Resistance Junction to End Cap: 20.0 oC/W  
Solder Temperatures: 260oC for 10 s (maximum)  
NOTE: Steady-state power ratings with reference to ambient are for PC boards where thermal resistance from  
mounting point to ambient is sufficiently controlled where TJ(MAX) is not exceeded.  
Copyright 2004  
11-01-2004 REV A  
Microsemi  
Scottsdale Division  
Page 1  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
123

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JAN1N6472US 替代型号

型号 品牌 替代类型 描述 数据表
1N6472US MICROSEMI

完全替代

 VOIDLESS HERMETICALLY SEALED SURFACE MOUNT UNDIRECTIONAL TRANSIENT SUPPRESSORS

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JAN1N6473 SEMTECH

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 		Trans Voltage Suppressor Diode, 1500W, 24V V(RWM), Unidirectional, 1 Element, Silicon, HER
JAN1N6473US SEMTECH

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 		Trans Voltage Suppressor Diode, 1500W, 24V V(RWM), Unidirectional, 1 Element, Silicon, HER
JAN1N6473US MICROSEMI

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 		Trans Voltage Suppressor Diode, 1500W, 24V V(RWM), Unidirectional, 1 Element, Silicon, GLA
JAN1N6474 SEMTECH

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 		Trans Voltage Suppressor Diode, 1500W, 31V V(RWM), Unidirectional, 1 Element, Silicon, HER
JAN1N6474US SEMTECH

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 		Trans Voltage Suppressor Diode, 1500W, 30.5V V(RWM), Unidirectional, 1 Element, Silicon, H
JAN1N6475 SEMTECH

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 		Trans Voltage Suppressor Diode, 1500W, 40V V(RWM), Unidirectional, 1 Element, Silicon, HER
JAN1N6475US MICROSEMI

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 		Trans Voltage Suppressor Diode, 1500W, 40.3V V(RWM), Unidirectional, 1 Element, Silicon, G
JAN1N6475US SEMTECH

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 		Trans Voltage Suppressor Diode, 1500W, 40.3V V(RWM), Unidirectional, 1 Element, Silicon, H
JAN1N6476 NJSEMI

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 		Transient Suppressor
JAN1N6476 SEMTECH

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 		Trans Voltage Suppressor Diode, 1500W, 52V V(RWM), Unidirectional, 1 Element, Silicon, HER

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