5秒后页面跳转
捷配首页

Datasheet > 二极管 > 整流二极管> JAN1N647-1
JAN1N647-1 PDF预览

JAN1N647-1

更新时间： 2024-01-03 10:51:45
品牌 Logo 应用领域
美高森美 - MICROSEMI 整流二极管
页数 文件大小 规格书
3页 171K
描述
Silicon Rectifier Diodes

阅读下载

中文翻译

获取价格

JAN1N647-1 技术参数

生命周期：ObsoleteReach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.83
二极管类型：RECTIFIER DIODE认证状态：Not Qualified
Base Number Matches：1

JAN1N647-1 数据手册

 浏览型号JAN1N647-1的Datasheet PDF文件第2页浏览型号JAN1N647-1的Datasheet PDF文件第3页 
1N645 to 649  
or  
Silicon Rectifier Diodes  
DO-35 Glass Package  
1N645-1 to 649-1  
Use Advantages  
Used as a general purpose rectifier in power supplies, or for clipping and  
steering applications.  
High performance alternative to small signal diodes where space does not  
permit use of power rectifiers.  
May be used in hostile environments where hermeticity and reliability are  
important i.e. (Military and Aero/Space). MIL-S- 19500/ 240 approvals.  
Available up to JANTXV-1 level.  
"S" level screening capability to Source Control Drawings.  
Features  
DO -35 G lass Package  
Six Sigma quality  
Lead Dia.  
0.018-0.022"  
0.458-0.558 mm  
Humidity proof glass  
Metallurgicallybonded  
Thermally matched system  
No thermal fatigue  
High surge capability  
Dia.  
0.06-0.09"  
1.0"  
25.4 m m  
(M in.)  
Length  
0.120-.200"  
3.05-5.08- mm  
1.53-2.28 mm  
Sigma Bond™ plated contacts  
100% guaranteed solderability  
(DO-213AA) SMD MELF commercial (LL) and MIL (UR-1) types available  
Absolute Maximum Ratings  
Symbol  
Ptot  
Value  
600  
Unit  
mWatts  
mAmps  
oC  
Power Dissipation at 3/8" from the body, TL= 75 oC  
AverageForwardRectifiedCurrentatTL = 75 oC  
OperatingandStorageTemperatureRange  
ThermalImpedance  
IAV  
400  
TO&S  
ZqJX  
-65 to 175  
35  
oC/W  
Detail Specifications  
Breakdown  
Voltage  
(MIN.)  
@ 100µA  
(BV)  
Maximum  
Average Rectified Current  
_______________  
Forward  
Voltage  
Drop  
Maximum  
Maximum  
Surge  
Current Capacitance  
Typical  
Junction  
Reverse  
Voltage  
Reverse Leakage Current  
_______________  
(IR) @ VR  
(IO)  
(IO)  
(VF) @ IF = 400mA  
(IFSM  
)
@ -12V  
(CO)  
(VR)  
25° C  
150° C (MIN.)  
(MAX.) 25° C  
100° C  
(NOTE 1)  
Type  
Volts  
Volts  
Amps  
Amps  
Volts  
µA  
µA  
Amps  
pF  
1N645,-1  
1N646,-1  
1N647,-1  
1N648,-1  
1N649,-1  
225  
300  
400  
500  
600  
275  
360  
480  
600  
720  
0.4  
0.4  
0.4  
0.4  
0.4  
0.15  
0.15  
0.15  
0.15  
0.15  
1.0  
1.0  
1.0  
1.0  
1.0  
0.2  
0.2  
0.2  
0.2  
0.2  
15  
15  
20  
20  
25  
3
3
3
3
3
9
9
9
9
9
Note 1: Surge Current @TA = +25° C to +150° C, for 1 Second  
For MELF DO-213AA surface mount package, replace "1N" prefix with "LL" for commercial.  
6 Lake Street - Lawrence, MA 01841  
Tel: 978-681-0392 - Fax: 978-681-9135  
123

中文翻译

下载PDF

JAN1N647-1 替代型号

型号 品牌 替代类型 描述 数据表
JANTXV1N647-1 MICROSEMI

完全替代

 Rectifier Diode, 1 Element, 0.15A, 12V V(RRM), Silicon, SIMILAR TO DO-35, 2 PIN
JANTX1N647-1 MICROSEMI

完全替代

 High surge current and peak pulse power provides transient voltage protection for sensitiv
1N647-1 MICROSEMI

完全替代

 Silicon Switching Diode DO-35 Glass Package

与JAN1N647-1相关器件

型号 品牌 获取价格 描述 数据表
JAN1N6471US SEMTECH

获取价格

 		Trans Voltage Suppressor Diode, 1500W, 12V V(RWM), Unidirectional, 1 Element, Silicon, HER
JAN1N6471US MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 1500W, 12V V(RWM), Unidirectional, 1 Element, Silicon, GLA
JAN1N647-1X MICROSEMI

获取价格

 		Rectifier Diode, 1 Element, 0.4A, Silicon, GLASS PACKAGE-2
JAN1N6472 MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 1500W, 15V V(RWM), Unidirectional, 1 Element, Silicon,
JAN1N6472 SEMTECH

获取价格

 		Trans Voltage Suppressor Diode, 1500W, 15V V(RWM), Unidirectional, 1 Element, Silicon, HER
JAN1N6472 NJSEMI

获取价格

 		Transient Suppressor
JAN1N6472US MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 1500W, 15V V(RWM), Unidirectional, 1 Element, Silicon, GLA
JAN1N6472US SEMTECH

获取价格

 		Trans Voltage Suppressor Diode, 1500W, 15V V(RWM), Unidirectional, 1 Element, Silicon, HER
JAN1N6473 SEMTECH

获取价格

 		Trans Voltage Suppressor Diode, 1500W, 24V V(RWM), Unidirectional, 1 Element, Silicon, HER
JAN1N6473US SEMTECH

获取价格

 		Trans Voltage Suppressor Diode, 1500W, 24V V(RWM), Unidirectional, 1 Element, Silicon, HER

与JAN1N647-1相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证