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JAN1N6472US

更新时间： 2024-02-09 11:25:45
品牌 Logo 应用领域
商升特 - SEMTECH 局域网二极管
页数 文件大小 规格书
3页 128K
描述
Trans Voltage Suppressor Diode, 1500W, 15V V(RWM), Unidirectional, 1 Element, Silicon, HERMETIC SEALED, GLASS PACKAGE-2

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中文翻译

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JAN1N6472US 技术参数

生命周期：Active包装说明：O-LELF-N2
针数：2Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.10.00.50
风险等级：5.61最小击穿电压：16.4 V
击穿电压标称值：16.4 V外壳连接：ISOLATED
最大钳位电压：26.5 V配置：SINGLE
二极管元件材料：SILICON二极管类型：TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码：O-LELF-N2最大非重复峰值反向功率耗散：1500 W
元件数量：1端子数量：2
最高工作温度：175 °C最低工作温度：-65 °C
封装主体材料：GLASS封装形状：ROUND
封装形式：LONG FORM极性：UNIDIRECTIONAL
最大功率耗散：3 W认证状态：Qualified
参考标准：MIL-19500/552C最大重复峰值反向电压：15 V
子类别：Transient Suppressors表面贴装：YES
技术：AVALANCHE端子形式：NO LEAD
端子位置：ENDBase Number Matches：1

JAN1N6472US 数据手册

 浏览型号JAN1N6472US的Datasheet PDF文件第2页浏览型号JAN1N6472US的Datasheet PDF文件第3页 
1N6469US THRU 1N6476US  
QPL 1500 Watt Surface Mount TVS  
POWER DISCRETES  
Features  
Description  
The 1N64xx series of transient voltage suppressors are  
designed to protect military and commercial electronic  
equipment from overvoltages caused by lightning, ESD,  
EFT, inductive load switching, and EMP. These devices  
are constructed using a p-n junction TVS diode in a  
hermetically sealed, voidless glass package. The  
hermetically sealed package provides high reliability in  
harsh environmental conditions. TVS diodes are further  
characterized by their high surge capability, low operating  
and clamping voltages, and a theoretically instantaneous  
response time. This makes them ideal for use as board  
level protection for sensitive semiconductor components.  
These devices are DSCC QPL qualified to MIL-PRF-  
19500/552.  
‹ 1500 Watts peak pulse power (tp = 10/1000µs)  
‹ Voidless hermetically sealed glass package  
‹ Metallurgically bonded  
‹ High surge capacity  
‹ Unidirectional  
‹ Available in JAN, JTX, and JTXV versions per  
MIL-PRF-19500/552  
Applications  
‹ Aerospace and industrial electronics  
‹ Board level protection  
‹ Airborne systems  
‹ Shipboard systems  
‹ Ground systems  
Mechanical Characteristics  
‹ Hermetically sealed glass package  
Absolute Maximum Ratings  
Rating  
Symbol  
Value  
Units  
Peak Pulse Power (tp = 10 x 1000µs)  
Operating Temperature Range  
Ppk  
Tj  
1500  
-65 to +175  
-65 to +175  
5
Watts  
°C  
Storage Temperature Range  
TSTG  
PD  
°C  
Steady-State Power Dissipation @ TL = 75°C (3/8")  
Watts  
Electrical Characteristics  
Electrical specifications @ TA = 25°C unless otherwise specified.  
Device  
Type  
Reverse  
Standoff  
Voltage  
VRWM  
Reverse  
Leakage  
Current  
IR  
Minimum  
Test  
Maximum Peak Pulse Peak Pulse  
Temp.  
Breakdown Current Clamping  
Current  
I
Current  
I
Coef.  
of V  
Voltage  
VBR @ IT  
Voltage  
VC @ IPP  
IT  
TP =P1PmS  
TP =P2P0µS  
αVZBR  
V
5
6
µA  
V
mA  
50  
50  
V
9
A
A
%/ °C  
0.040  
0.040  
1N6469  
1N6470  
1500  
1000  
5.6  
6.5  
167  
137  
945  
775  
11.0  
1N6471  
12  
20  
13.6  
10  
22.6  
66  
374  
0.050  
1N6472  
1N6473  
1N6474  
1N6475  
1N6476  
15  
24  
10  
5
16.4  
27.0  
33.0  
43.7  
54.0  
10  
5
26.5  
41.4  
47.5  
63.5  
78.5  
57  
36.5  
32  
322  
206  
190  
136  
106  
0.060  
0.084  
0.093  
0.094  
0.096  
30.5  
40.3  
51.6  
5
1
5
1
24  
5
1
19  
Revision: September 24, 2008  
1
www.semtech.com  
123

中文翻译

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JAN1N6475 SEMTECH

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 		Trans Voltage Suppressor Diode, 1500W, 40V V(RWM), Unidirectional, 1 Element, Silicon, HER
JAN1N6475US MICROSEMI

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JAN1N6475US SEMTECH

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 		Trans Voltage Suppressor Diode, 1500W, 40.3V V(RWM), Unidirectional, 1 Element, Silicon, H
JAN1N6476 NJSEMI

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 		Transient Suppressor
JAN1N6476 SEMTECH

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 		Trans Voltage Suppressor Diode, 1500W, 52V V(RWM), Unidirectional, 1 Element, Silicon, HER

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