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IZTH6N90 PDF预览

IZTH6N90

更新时间: 2024-11-05 22:06:27
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IXYS /
页数 文件大小 规格书
4页 107K
描述
Standard Power MOSFET

IZTH6N90 数据手册

 浏览型号IZTH6N90的Datasheet PDF文件第2页浏览型号IZTH6N90的Datasheet PDF文件第3页浏览型号IZTH6N90的Datasheet PDF文件第4页 
VDSS  
ID25 RDS(on)  
Standard  
IXTH / IXTM 6N90  
IXTH / IXTM 6N90A  
900V  
900V  
6 A  
6 A  
1.8 Ω  
1.4 Ω  
Power MOSFET  
N-ChannelEnhancementMode  
Symbol  
Test Conditions  
MaximumRatings  
TO-247 AD (IXTH)  
VDSS  
VDGR  
TJ = 25°C to 150°C  
900  
900  
V
V
TJ = 25°C to 150°C; RGS = 1 MΩ  
D(TAB)  
VGS  
Continuous  
Transient  
±20  
±30  
V
V
VGSM  
ID25  
IDM  
TC = 25°C  
6
A
A
TO-204 AA (IXTM)  
TC = 25°C, pulse width limited by TJM  
24  
PD  
TC = 25°C  
180  
W
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
G
-55 ... +150  
Md  
Mountingtorque  
1.13/10 Nm/lb.in.  
G = Gate,  
D = Drain,  
S = Source,  
TAB = Drain  
Weight  
TO-204 = 18 g, TO-247 = 6 g  
Maximumleadtemperatureforsoldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
Features  
Internationalstandardpackages  
Low RDS (on) HDMOSTM process  
Rugged polysilicon gate cell structure  
Low package inductance (< 5 nH)  
- easy to drive and to protect  
Fast switching times  
Symbol  
Test Conditions  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Applications  
Switch-modeandresonant-mode  
powersupplies  
Motorcontrols  
UninterruptiblePowerSupplies(UPS)  
DC choppers  
VDSS  
VGS = 0 V, ID = 3 mA  
900  
2
V
V
VGS(th)  
VDS = VGS, ID = 250 µA  
4.5  
IGSS  
IDSS  
VGS = ±20 VDC, VDS = 0  
±100 nA  
250 µA  
VDS = 0.8 • VDSS  
VGS = 0 V  
TJ = 25°C  
TJ = 125°C  
Advantages  
1
mA  
Easy to mount with 1 screw (TO-247)  
(isolated mounting screw hole)  
Space savings  
RDS(on)  
VGS = 10 V, ID = 0.5 ID25  
6N90  
6N90A  
1.8  
1.4  
Pulse test, t 300 µs, duty cycle d 2 %  
Highpowerdensity  
IXYS reserves the right to change limits, test conditions, and dimensions.  
© 2000 IXYS All rights reserved  
91543E(5/96)  
1 - 4  

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