J/SST111 Series
Vishay Siliconix
N-Channel JFETs
J111 SST111
J112 SST112
J113 SST113
PRODUCT SUMMARY
Part Number
VGS(off) (V)
rDS(on) Max (W)
ID(off) Typ (pA)
tON Typ (ns)
–3 to –10
–1 to –5
v–3
30
50
5
5
5
4
4
4
J/SST111
J/SST112
J/SST113
100
FEATURES
BENEFITS
APPLICATIONS
D Low On-Resistance: 111 < 30 W
D Fast Switching—tON: 4 ns
D Low Leakage: 5 pA
D Low Error Voltage
D Analog Switches
D Choppers
D High-Speed Analog Circuit Performance
D Negligible “Off-Error,” Excellent Accuracy
D Good Frequency Response, Low Glitches
D Eliminates Additional Buffering
D Sample-and-Hold
D Normally “On” Switches
D Current Limiters
D Low Capacitance: 3 pF
D Low Insertion Loss
DESCRIPTION
The J/SST111 series consists of all-purpose analog switches
designed to support a wide range of applications. The
J/SST113 are useful in a high-gain amplifier mode.
For similar products in TO-206AA(TO-18) packaging, see the
2N/PN/SST4391 series, 2N4856A/4857A/4858A, and
2N5564/5565/5566 (duals) data sheets.
The J series, TO-226AA (TO-92) plastic package, provides
low cost, while the SST series, TO236 (SOT-23) package,
provides surface-mount capability. Both the J and SST series
are available in tape-and-reel for automated assembly (see
Packaging Information).
TO-226AA (TO-92)
TO-236 (SOT-23)
1
D
S
D
S
1
2
3
G
2
G
3
Top View
SST111 (C1)*
SST112 (C2)*
SST113 (C3)*
Top View
J111
J112
J113
*Marking Code for TO-236
ABSOLUTE MAXIMUM RATINGS
a
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –35 V
Power Dissipation
(TO-236) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW
(TO-226AA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360 mW
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
1
Lead Temperature ( / ” from case for 10 seconds) . . . . . . . . . . . . . . 300 _C
16
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
Notes
a. Derate 2.8 mW/_C above 25_C
For applications information see AN105.
Document Number: 70232
S-04028—Rev. E, 04-Jun-01
www.vishay.com
7-1