Datasheet > J/SST112

J/SST112

更新时间： 2024-11-08 22:33:31

品牌	Logo	应用领域
Linear Systems		/
页数	文件大小	规格书
2页	263K
描述
SINGLE N-CHANNEL JFET

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中文翻译

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数据手册

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J/SST112 数据手册

J/SST111 SERIES

SINGLE N-CHANNEL JFET

Linear Integrated Systems

FEATURES

DIRECT REPLACEMENT FOR SILICONIX J/SST111 SERIES

LOW GATE LEAKAGE CURRENT

FAST SWITCHING

5pA

4ns

J SERIES

TO-92

BOTTOM VIEW

SST SERIES

SOT-23

TOP VIEW

ABSOLUTE MAXIMUM RATINGS¹

@ 25 °C (unless otherwise stated)

Maximum Temperatures

Storage Temperature

-55 to 150°C

-55 to 135°C

Junction Operating Temperature

Maximum Power Dissipation

Continuous Power Dissipation (J)

Continuous Power Dissipation (SST)

Maximum Currents

360mW

350mW

Gate Current

50mA

Maximum Voltages

Gate to Drain

Gate to Source

-35V

STATIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated)

J/SST111

J/SST112

J/SST113

SYM.

CHARACTERISTIC

TYP

UNIT CONDITIONS

I_G= -1µA, V_DS= 0V

MIN MAX MIN MAX MIN MAX

BV_GSSGate to Source Breakdown Voltage

V_GS(off)Gate to Source Cutoff Voltage

-35

-3

-35

-1

-35

-10

-1

-5

-1

-3

-1

V_DS= 5V, I_D= 1µA

I_G= 1mA, V_DS= 0V

V_DS= 15V, V_GS= 0V

V_GS= -15V, V_DS= 0V

V_DG= 15V, I_D= 10mA

V_DS= 5V, V_GS= -10V

I_G= 1mA, V_DS= 0V

V_GS(F)

I_DSS

I_GSS

I_G

I_D(off)

r_DS(on)

Gate to Source Forward Voltage

Drain to Source Saturation Current²

Gate Leakage Current

Gate Operating Current

Drain Cutoff Current

0.7

Ω

-0.005

-5

0.005

100

Drain to Source On Resistance

Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261

中文翻译

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