J/SST111 SERIES
SINGLE N-CHANNEL JFET
Linear Integrated Systems
FEATURES
DIRECT REPLACEMENT FOR SILICONIX J/SST111 SERIES
LOW GATE LEAKAGE CURRENT
FAST SWITCHING
5pA
4ns
J SERIES
TO-92
BOTTOM VIEW
SST SERIES
SOT-23
TOP VIEW
ABSOLUTE MAXIMUM RATINGS1
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
1
D
3
D
1
S
2
G
3
G
-55 to 150°C
-55 to 135°C
2
S
Junction Operating Temperature
Maximum Power Dissipation
Continuous Power Dissipation (J)
Continuous Power Dissipation (SST)
Maximum Currents
360mW
350mW
Gate Current
50mA
Maximum Voltages
Gate to Drain
Gate to Source
-35V
-35V
STATIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated)
J/SST111
J/SST112
J/SST113
SYM.
CHARACTERISTIC
TYP
UNIT CONDITIONS
IG = -1µA, VDS = 0V
MIN MAX MIN MAX MIN MAX
BVGSS Gate to Source Breakdown Voltage
VGS(off) Gate to Source Cutoff Voltage
-35
-3
-35
-1
-35
2
V
-10
-1
-5
-1
-3
-1
VDS = 5V, ID = 1µA
IG = 1mA, VDS = 0V
VDS = 15V, VGS = 0V
VGS = -15V, VDS = 0V
VDG = 15V, ID = 10mA
VDS = 5V, VGS = -10V
IG = 1mA, VDS = 0V
VGS(F)
IDSS
IGSS
IG
ID(off)
rDS(on)
Gate to Source Forward Voltage
Drain to Source Saturation Current2
Gate Leakage Current
Gate Operating Current
Drain Cutoff Current
0.7
20
5
mA
nA
pA
nA
Ω
-0.005
-5
0.005
1
30
1
50
1
100
Drain to Source On Resistance
Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261