Datasheet > IXTH180N10T

IXTH180N10T

更新时间： 2024-01-25 22:08:03

品牌	Logo	应用领域
力特 - LITTELFUSE		局域网开关脉冲晶体管
页数	文件大小	规格书
6页	246K
描述
Power Field-Effect Transistor,

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技术参数
数据手册

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IXTH180N10T 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.76
Base Number Matches：	1

IXTH180N10T 数据手册

IXTH180N10T

IXTQ180N10T

Fig. 14. Resistive Turn-on

Rise Time vs. Drain Current

Fig. 13. Resistive Turn-on

Rise Time vs. Junction Temperature

= 3.3

Ω

T = 25ºC

= 10V

= 50V

= 3.3

Ω

= 10V

= 50V

= 50A

= 25A

T = 125ºC

105 115 125

24 26 28 30 32 34 36 38 40 42 44 46 48 50

I_D- Amperes

T_J- Degrees Centigrade

Fig. 15. Resistive Turn-on

Switching Times vs. Gate Resistance

Fig. 16. Resistive Turn-off

Switching Times vs. Junction Temperature

180

160

140

120

100

t _f

t_d(off)

- - - -

t _r

t_d(on)

- - - -

= 3.3 , V = 10V

Ω

T = 125ºC, V = 10V

25A < I < 50A

= 50V

= 50A

= 25A

= 25A, 50A

95 105 115 125

R_G- Ohms

T_J- Degrees Centigrade

Fig. 18. Resistive Turn-off

Switching Times vs. Gate Resistance

Fig. 17. Resistive Turn-off

Switching Times vs. Drain Current

160

140

120

100

250

220

190

160

130

100

t_f

t_d(off)

- - - -

T = 125ºC, V_GS= 10V

V_DS= 50V

T_J= 125ºC

t_f

t_d(off)

- - - -

= 3.3 , V_GS= 10V

Ω

V_DS= 50V

25A < I < 50A

= 25A, 50A

T = 25ºC

R_G- Ohms

I_D- Amperes

IXYS REF:T_180N10T (61) 11-20-06-A.xls

1 2 3 456

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