Datasheet > IXTH182N055T

IXTH182N055T

更新时间： 2023-12-06 20:12:34

品牌	Logo	应用领域
力特 - LITTELFUSE		栅
页数	文件大小	规格书
7页	292K
描述
沟槽栅功率MOSFET适用于低电压/高电流应用，所需的RDS(ON)极低，因此确保了非常低的功率耗损。再结合广泛的工作结温范围（从-40 °C到175 °C），这些产品非常适合汽车应用以及其他处

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IXTH182N055T 数据手册

Preliminary Technical Information

TrenchMV^TM

Power MOSFET

IXTH182N055T

IXTQ182N055T

V_DSS= 55

I_D25= 182

R_DS(on)≤ 5.0 m Ω

N-Channel Enhancement Mode

Avalanche Rated

TO-247 (IXTH)

Symbol

Test Conditions

Maximum Ratings

(TAB)

V_DSS

V_DGR

T_J= 25° C to 175° C

T_J= 25° C to 175° C; R_GS= 1 MΩ

V_GSM

Transient

TO-3P (IXTQ)

I_D25

I_LRMS

I_DM

T_C= 25° C

Lead Current Limit, RMS

T_C= 25° C, pulse width limited by T_JM

182

490

I_AR

E_AS

T_C=25°C

T_C= 25° C

1.0

(TAB)

dv/dt

P_D

I_S≤I_DM, di/dt ≤100 A/µs, V_DD≤V_DSS

T_J≤175° C, R_G= 5 Ω

V/ns

G = Gate

S = Source

D = Drain

TAB = Drain

T_C=25°C

360

T_J

T_JM

T_stg

-55 ... +175

175

-55 ... +175

°C

T_L

T_SOLD

1.6 mm (0.062 in.) from case for 10 s

Plastic body for 10 seconds

300

260

°C

Features

^ꢀUltra-low On Resistance

M_d

Mounting torque

1.13 / 10 Nm/lb.in.

^ꢀUnclamped Inductive Switching (UIS)

rated

Weight

TO-3P

TO-247

5.5

^ꢀLow package inductance

- easy to drive and to protect

^ꢀ175 ° C Operating Temperature

Advantages

Symbol

Test Conditions

Characteristic Values

ꢀ

Easy to mount

Space savings

High power density

(T_J= 25° C unless otherwise specified)

Min. Typ.

Max.

ꢀ

BV_DSS

V_GS(th)

I_GSS

V_GS= 0 V, I_D= 250 µA

V_DS= V_GS, I_D= 250 µA

ꢀ

2.0

4.0

Applications

ꢀ

Automotive

V_GS

20 V, V_DS= 0 V

200

- Motor Drives

- High Side Switch

- 12VBattery

I_DSS

V_DS= V_DSS

V_GS= 0 V

250

µA

T_J= 150° C

- ABS Systems

R_DS(on)

V_GS= 10 V, I_D=25 A, Notes 1, 2

3.5

5.0 m Ω

ꢀ

DC/DC Converters and Off-line UPS

Primary- Side Switch

High Current Switching

ꢀ

Applications

DS99682 (11/06)

12 3 4 5 6 7

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