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ITF86116SQT2 PDF预览

ITF86116SQT2

更新时间: 2024-11-04 23:59:51
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
12页 201K
描述
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 9A I(D) | TSSOP

ITF86116SQT2 数据手册

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ITF86116SQT  
TM  
Data Sheet  
July 2000  
File Number 4808.3  
10A, 30V, 0.012 Ohm, N-Channel, Logic  
Level, Power MOSFET  
Features  
• Ultra Low On-Resistance  
- r  
- r  
= 0.012Ω, VGS = 10V  
DS(ON)  
DS(ON)  
Packaging  
= 0.016Ω, VGS = 4.5V  
TSSOP8  
• Gate to Source Protection Diode  
• Simulation Models  
- Temperature Compensated PSPICE® and SABER™  
Electrical Models  
5
- Spice and SABER Thermal Impedance Models  
- www.intersil.com  
1
2
4
3
• Peak Current vs Pulse Width Curve  
Transient Thermal Impedance Curve vs Board Mounting  
Area  
Symbol  
• Switching Time vs R  
GS  
Curves  
Ordering Information  
DRAIN(1)  
DRAIN(8)  
PART NUMBER  
PACKAGE  
TSSOP-8  
BRAND  
SOURCE(2)  
SOURCE(7)  
ITF86116SQT  
86116  
NOTE: When ordering, use the entire part number. ITF86116SQT2  
is available only in tape and reel.  
SOURCE(3)  
GATE(4)  
SOURCE(6)  
DRAIN(5)  
o
Absolute Maximum Ratings T = 25 C, Unless Otherwise Specified  
A
ITF86116SQT  
UNITS  
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V  
30  
30  
V
V
V
DSS  
Drain to Gate Voltage (R  
GS  
= 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V  
DGR  
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V  
±20  
GS  
Drain Current  
o
Continuous (T = 25 C, V  
= 10V) (Figure 2) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I  
10.0  
9.0  
5.0  
A
A
A
A
A
GS  
D
D
o
Continuous (T = 25 C, V  
= 4.5V) (Note 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I  
= 4.5V) (Note 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I  
A
GS  
o
Continuous (T = 100 C, V  
A
GS  
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I  
Figure 4  
DM  
Power Dissipation (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P  
Derate Above 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  
2
16  
W
mW/ C  
D
o
o
o
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T , T  
J
-55 to 150  
C
STG  
Maximum Temperature for Soldering  
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T  
Package Body for 10s, See Technical Brief TB370 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T  
o
300  
260  
C
C
L
o
pkg  
NOTES:  
o
o
1. T = 25 C to 125 C.  
J
o
2
2
2. 62.5 C/W measured using FR-4 board with 1.00 in (645.2 mm ) copper pad at 10 second.  
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the  
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.  
1
CAUTION: These devices are sensitive to electrostatic discharge. Follow proper ESD Handling Procedures.  
SABER™ is a trademark of Analogy, Inc. PSPICE® is a registered trademark of MicroSim Corporation.  
1-888-INTERSIL or 321-724-7143 | Intersil and Design is a trademark of Intersil Corporation. | Copyright © Intersil Corporation 2000  

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