Datasheet > ISL73061SEHX/SAMPLE

ISL73061SEHX/SAMPLE

更新时间： 2024-01-14 11:51:16

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
23页	720K
描述
Peripheral Driver

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技术参数
数据手册

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ISL73061SEHX/SAMPLE 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.76	Base Number Matches：	1

ISL73061SEHX/SAMPLE 数据手册

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Datasheet

ISL70061SEH, ISL73061SEH

Radiation Hardened 10A PMOS Load Switch

The ISL70061SEH and ISL73061SEH

(ISL7x061SEH) are radiation hardened single

Features

• Electrically screened to DLA SMD 5962-19208

• Integrated high speed load switch

○ Turn-off time of 3µs

channel load switches featuring ultra-low r and

controlled rise time. These devices use a PMOS pass

device as the main switch that operates across an

input voltage range of 3V to 5.5V and can support a

maximum of 10A continuous current. Simple ON/OFF

digital control inputs make the device capable of

interfacing directly with low voltage control signals

from an FPGA, MCU, or processor.

• Ultra-low ON-resistance (r ) of 14mΩ typical

• Continuous 10A switch current

• Controlled rise time to minimize inrush current

• Reverse current protection

Additional features include reverse current protection

to stop current from flowing toward the input when the

output SWO voltage increases above the input SWI

voltage, a selectable 122Ω MOSFET to discharge the

output, and Undervoltage Lockout (UVLO) protection

that keeps the switch OFF when the input voltage is

too low.

• Simple ON/OFF logic control

• Undervoltage lockout

• Selectable 122Ω discharge MOSFET

• Radiation acceptance testing - ISL70061SEH

○ HDR (50-300rad(Si)/s): 100krad(Si)

○ LDR (0.01rad(Si)/s): 75krad(Si)

The ISL7x061SEH devices operate across the

military temperature range from -55°C to +125°C and

are available in a 14 Ld hermetically sealed Ceramic

Dual Flatpack (CDFP) package or in die form.

• Radiation acceptance testing - ISL73061SEH

○ LDR (0.01rad(Si)/s): 75krad(Si)

Applications

• SEE hardness (see SEE report for details)

• Satellites power distribution management

• Power system redundancy

• Power sequencing

○ No SEB/SEL LET , SWI, SWO, ON,

DON = 6.7V: 86MeV•cm /mg

Related Literature

• Power system fault management

• Space VPX systems

For a full list of related documents, visit our website:

• ISL70061SEH and ISL73061SEH device pages

ISL70003ASEH

Load 1

ISL70061SEH

-55°C

25°C

= 5.5V

SWI

125°C

Switch Current (A)

Figure 1. Redundant Source Switch Application

Figure 2. r vs Current vs Temperature

R34DS0004EU0102 Rev.1.02

Dec.11.19

Page 1 of 23

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与ISL73061SEHX/SAMPLE相关器件

型号	品牌	获取价格	描述	数据表
ISL73062SEH	RENESAS	获取价格	Radiation Hardened 10A NMOS Load Switch
ISL73062SEHX/SAMPLE	RENESAS	获取价格	Peripheral Driver
ISL73096EH	RENESAS	获取价格	Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays
ISL73096EHVF	RENESAS	获取价格	RF POWER TRANSISTOR
ISL73096RH	INTERSIL	获取价格	Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays
ISL73096RH	RENESAS	获取价格	Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays
ISL73096RH_09	INTERSIL	获取价格	Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays
ISL73096RHF/PROTO	INTERSIL	获取价格	Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays
ISL73096RHX/SAMPLE	INTERSIL	获取价格	Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays
ISL73100SEH	RENESAS	获取价格	Radiation Hardened 40V High Side Current Sense Amplifiers

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