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ISL73127EH

更新时间： 2024-11-21 14:57:39
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瑞萨 - RENESAS /
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Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays

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ISL73127EH 数据手册

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DATASHEET  
ISL73096RH, ISL73127RH, ISL73128RH, ISL73096EH, ISL73127EH,  
ISL73128EH  
FN6475  
Rev 4.00  
June 27, 2014  
Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays  
The ISL73096, ISL73127 and ISL73128 are radiation  
Features  
hardened bipolar transistor arrays. The ISL73096 consists of  
• Electrically screened to SMD # 5962-07218  
three NPN transistors and two PNP transistors on a common  
substrate. The ISL73127 consists of five NPN transistors on a  
common substrate. The ISL73128 consists of five PNP  
transistors on a common substrate.  
• QML qualified per MIL-PRF-38535 requirements  
• Radiation tolerance  
- High dose rate (50-300rad(Si)/s). . . . . . . . . . . 100krad(Si)  
- Low dose rate (0.01rad(Si)/s) . . . . . . . . . . . . . 50krad(Si)*  
- SEL immune . . . . . . . . . . Bonded wafer dielectric isolation  
The ISL73096EH, ISL73127EH and ISL73128EH devices  
encompass all of the production testing of the ISL73096RH,  
ISL73127RH and ISL73128RH devices and additionally are  
tested in the Intersil Enhanced Low Dose Rate Sensitivity  
(ELDERS) product manufacturing flow.  
• NPN gain bandwidth product (F ) . . . . . . . . . . . . . . 8GHz (typ)  
T
• NPN current gain (h ) . . . . . . . . . . . . . . . . . . . . . . . . 130 (typ)  
FE  
One of our bonded wafer, dielectrically isolated fabrication  
processes provides an immunity to single event latch-up and  
the capability of highly reliable performance in a radiation  
environment.  
• NPN early voltage (V ). . . . . . . . . . . . . . . . . . . . . . . . . 50V (typ)  
A
• PNP gain bandwidth product (F ). . . . . . . . . . . . . 5.5GHz (typ)  
T
• PNP current gain (h ). . . . . . . . . . . . . . . . . . . . . . . . . . 60 (typ)  
FE  
• PNP early voltage (V ) . . . . . . . . . . . . . . . . . . . . . . . . . 20V (typ)  
A
The high gain-bandwidth product and low noise figure of these  
transistors make them ideal for use in high frequency  
amplifier and mixer applications. Monolithic construction of  
the NPN and PNP transistors provides the closest electrical  
and thermal matching possible. Access is provided to each  
terminal of the transistors for maximum application flexibility.  
• Noise figure (50) at 1GHz. . . . . . . . . . . . . . . . . . . 3.5dB (typ)  
• Collector-to-collector leakage . . . . . . . . . . . . . . . . . .<1pA (typ)  
• Complete isolation between transistors  
* Limit established by characterization.  
Related Literature  
• AN1503, Amplifier Design Using ISL73096RH,  
ISL73127RH, ISL73128RH Transistor Arrays  
Applications  
• High frequency amplifiers and mixers  
• High frequency converters  
• TID REPORT for the Radiation Hardened UHF NPN/PNP  
transistor array  
• Synchronous detector  
120  
115  
110  
105  
100  
95  
75  
70  
65  
60  
55  
50  
45  
40  
90  
85  
80  
0
50  
100  
150  
200  
250  
300  
0
50  
100  
150  
krad(Si)  
200  
250  
300  
krad(Si)  
FIGURE 1. NPN BETA OVER TOTAL IONIZING DOSE (TID) FOR LOW  
DOSE RATE (LDR) TO 50krads(Si) AND HIGH DOSE RATE  
(HDR) TO 300krads(Si)  
FIGURE 2. PNP BETA OVER TOTAL IONIZING DOSE (TID) FOR LOW  
DOSE RATE (LDR) TO 50krads(Si) AND HIGH DOSE RATE  
(HDR) TO 300krads(Si)  
FN6475 Rev 4.00  
June 27, 2014  
Page 1 of 11  
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