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ISL73041SEH PDF预览

ISL73041SEH

更新时间: 2024-03-03 10:10:51
品牌 Logo 应用领域
瑞萨 - RENESAS /
页数 文件大小 规格书
40页 1628K
描述
Radiation Hardened 12V Half Bridge GaN FET Driver

ISL73041SEH 数据手册

 浏览型号ISL73041SEH的Datasheet PDF文件第34页浏览型号ISL73041SEH的Datasheet PDF文件第35页浏览型号ISL73041SEH的Datasheet PDF文件第36页浏览型号ISL73041SEH的Datasheet PDF文件第37页浏览型号ISL73041SEH的Datasheet PDF文件第39页浏览型号ISL73041SEH的Datasheet PDF文件第40页 
ISL73041SEH Datasheet  
10. Ordering Information  
Radiation Hardness  
(Total Ionizing Dose)  
Package Description  
(RoHS Compliant)  
Package  
Drawing  
Carrier  
Type  
[1]  
Part Number  
Temp Range  
16 Pad CLCC Packaged  
Device (QML-V Level  
Screening)  
ISL73041SEHML  
J16.A  
Tray  
LDR to 75krad(Si)  
Bare Die (QML-V Level  
Screening)  
[2]  
ISL73041SEHMX  
N/A  
N/A  
N/A  
N/A  
Tray  
-55 to +125°C  
[2][3]  
ISL73041SEHX/SAMPLE  
Die  
N/A  
16 Pad CLCC Packaged  
Device  
[3]  
ISL73041SEHL/PROTO  
J16.A  
[4]  
ISL73041SEHEV1Z  
ISL73041SEH Evaluation Board  
[4]  
ISL73847SEHEV2Z  
ISL73847SEH + ISL73041SEH Evaluation Board  
ISL73847SEH + ISL73041SEH Business Card Size Demonstration board with Package GaN  
FETs; V = 12V; V = 1V; I = 50A; f = 500kHz;  
[4]  
ISL73847SEHDEMO2Z  
IN  
OUT  
OUT  
SW  
1. These Pb-free Hermetic packaged products employ 100% Au plate - e4 termination finish, which is RoHS compliant and compatible with  
both SnPb and Pb-free soldering operations.  
2. Die product tested at TA = + 25°C. The wafer probe test includes functional and parametric testing sufficient to make the die capable of  
meeting the electrical performance outlined in Electrical Specifications. The die is sourced from wafer lots that have been qualified for  
Group C and Group E per MIL-PRF-38535 (Refer to R34TB0001: Renesas Radiation Hardened QML-V Equivalent Screening and QCI  
Flow for more information).  
3. The /PROTO and /SAMPLE are not rated or certified for Total Ionizing Dose (TID) or Single Event Effect (SEE) immunity. These parts  
are intended for engineering evaluation purposes only. The /PROTO parts meet the electrical limits and conditions across temperature  
specified in this datasheet. The /SAMPLE parts are capable of meeting the electrical limits and conditions specified in this datasheet. The  
/SAMPLE parts do not receive 100% screening across temperature to the electrical limits. These part types do not come with a Certificate  
of Conformance.  
4. Evaluation board uses the /PROTO parts and /PROTO parts are not rated or certified for Total Ionizing Dose (TID) or Single Event Effect  
(SEE) immunity.  
11. Revision History  
Rev.  
Date  
Description  
Updated Features bullets.  
1.03  
Jan 4, 2024  
Added Dual Complimentary Low-Side GaN FET Driver section.  
Updated Figure 14.  
1.02  
Jun 22, 2023  
Updated Ordering Information table.  
R34DS0017EU0103 Rev.1.03  
Jan 4, 2024  
Page 38  

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