Datasheet > ISL73041SEH

ISL73041SEH

更新时间： 2024-03-03 10:10:51

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
40页	1628K
描述
Radiation Hardened 12V Half Bridge GaN FET Driver

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ISL73041SEH 数据手册

ISL73041SEH Datasheet

8. Die and Assembly Characteristics

Table 2. Die and Assembly Related Information

Die Information

Dimensions

2794µm x 2794µm (110 mils x 110 mils)

Thickness: 305µm ±25µm (12 mils ±1 mil)

Interface Materials

Glassivation

Type: Silicon dioxide and silicon nitride

Thickness: 18.5kA ±10% dioxide; 6kA ±10% nitride

Type: Al 99.5%, Cu 0.5%

Top Metalization

Thickness: 2.85µm ±0.15µm

Backside Finish

Silicon

Process

0.25µm BiCMOS

Assembly Information

Substrate and Package Lid Potential

Additional Information

Transistor Count

Internal connection to the four EPAD (SGND)

5737

Weight of Packaged Device

0.36g

Finish: Gold

Lid Characteristics

Lid Potential: Connected to SGND pin

R34DS0017EU0103 Rev.1.03

Jan 4, 2024

Page 34

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