5秒后页面跳转
ISL73061SEH PDF预览

ISL73061SEH

更新时间: 2023-12-20 18:45:31
品牌 Logo 应用领域
瑞萨 - RENESAS /
页数 文件大小 规格书
23页 720K
描述
Radiation Hardened 10A PMOS Load Switch

ISL73061SEH 数据手册

 浏览型号ISL73061SEH的Datasheet PDF文件第2页浏览型号ISL73061SEH的Datasheet PDF文件第3页浏览型号ISL73061SEH的Datasheet PDF文件第4页浏览型号ISL73061SEH的Datasheet PDF文件第5页浏览型号ISL73061SEH的Datasheet PDF文件第6页浏览型号ISL73061SEH的Datasheet PDF文件第7页 
Datasheet  
ISL70061SEH, ISL73061SEH  
Radiation Hardened 10A PMOS Load Switch  
The ISL70061SEH and ISL73061SEH  
(ISL7x061SEH) are radiation hardened single  
Features  
• Electrically screened to DLA SMD 5962-19208  
• Integrated high speed load switch  
Turn-off time of 3µs  
channel load switches featuring ultra-low r and  
ON  
controlled rise time. These devices use a PMOS pass  
device as the main switch that operates across an  
input voltage range of 3V to 5.5V and can support a  
maximum of 10A continuous current. Simple ON/OFF  
digital control inputs make the device capable of  
interfacing directly with low voltage control signals  
from an FPGA, MCU, or processor.  
• Ultra-low ON-resistance (r ) of 14mΩ typical  
ON  
• Continuous 10A switch current  
• Controlled rise time to minimize inrush current  
• Reverse current protection  
Additional features include reverse current protection  
to stop current from flowing toward the input when the  
output SWO voltage increases above the input SWI  
voltage, a selectable 122Ω MOSFET to discharge the  
output, and Undervoltage Lockout (UVLO) protection  
that keeps the switch OFF when the input voltage is  
too low.  
• Simple ON/OFF logic control  
• Undervoltage lockout  
• Selectable 122Ω discharge MOSFET  
• Radiation acceptance testing - ISL70061SEH  
HDR (50-300rad(Si)/s): 100krad(Si)  
LDR (0.01rad(Si)/s): 75krad(Si)  
The ISL7x061SEH devices operate across the  
military temperature range from -55°C to +125°C and  
are available in a 14 Ld hermetically sealed Ceramic  
Dual Flatpack (CDFP) package or in die form.  
• Radiation acceptance testing - ISL73061SEH  
LDR (0.01rad(Si)/s): 75krad(Si)  
Applications  
• SEE hardness (see SEE report for details)  
• Satellites power distribution management  
• Power system redundancy  
• Power sequencing  
No SEB/SEL LET , SWI, SWO, ON,  
TH  
2
DON = 6.7V: 86MeV•cm /mg  
Related Literature  
• Power system fault management  
• Space VPX systems  
For a full list of related documents, visit our website:  
ISL70061SEH and ISL73061SEH device pages  
25  
20  
15  
ISL70003ASEH  
ISL70003ASEH  
Load 1  
10  
ISL70061SEH  
ISL70061SEH  
-55°C  
5
0
25°C  
V
= 5.5V  
2
SWI  
125°C  
1
3
4
5
6
7
8
9
10  
Switch Current (A)  
Figure 1. Redundant Source Switch Application  
Figure 2. r vs Current vs Temperature  
ON  
R34DS0004EU0102 Rev.1.02  
Dec.11.19  
Page 1 of 23  

与ISL73061SEH相关器件

型号 品牌 获取价格 描述 数据表
ISL73061SEHX/SAMPLE RENESAS

获取价格

Peripheral Driver
ISL73062SEH RENESAS

获取价格

Radiation Hardened 10A NMOS Load Switch
ISL73062SEHX/SAMPLE RENESAS

获取价格

Peripheral Driver
ISL73096EH RENESAS

获取价格

Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays
ISL73096EHVF RENESAS

获取价格

RF POWER TRANSISTOR
ISL73096RH INTERSIL

获取价格

Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays
ISL73096RH RENESAS

获取价格

Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays
ISL73096RH_09 INTERSIL

获取价格

Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays
ISL73096RHF/PROTO INTERSIL

获取价格

Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays
ISL73096RHX/SAMPLE INTERSIL

获取价格

Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays