Datasheet > ISB-E48-0

ISB-E48-0

更新时间： 2024-11-30 03:44:35

品牌	Logo	应用领域
三洋 - SANYO		传感器
页数	文件大小	规格书
6页	60K
描述
Ultrathin Miniature Package Charger Circuit Voltage Sensor + 3 P-channel MOSFETs

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中文翻译

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ISB-E48-0 数据手册

Ordering number : EISB0006A

Ultrathin Miniature Package

ISB-E48-0,

ISB-E48-1

Charger Circuit Voltage Sensor

+ 3 P-channel MOSFETs

Overview

The ISB-E48-0, ISB-E48-1 incorporates in its power input block a high-precision voltage detector that provides

protection against overvoltage. The ISB-E48-0, ISB-E48-1 also includes three P-channel MOSFET chips and allows for

easy implementation of a charger circuit for cell phones and other portable equipment by incorporating the IC in a

current interrupting switch activated by a voltage-detector or in an output block of a charger control IC.

Application

• Battery charger for portable equipment including cell phones.

Features

• On-chip high-precision voltage detector and three P-channel MOSFET chips.

• Miniature package makes this IC ideal for miniaturization of electronic devices and high-density mounting on printed

circuit boards.

• ISB is a registered trademark of SANYO Electric Co., Ltd.

Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to

"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,

communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be

intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace

instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety

equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case

of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee

thereof. If you should intend to use our products for applications outside the standard applications of our

customer who is considering such use and/or outside the scope of our intended standard applications, please

consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our

customer shall be solely responsible for the use.

Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate

the performance, characteristics, and functions of the described products in the independent state, and are not

guarantees of the performance, characteristics, and functions of the described products as mounted in the

customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent

device, the customer should always evaluate and test devices mounted in the customer

's products or

equipment.

50907HKIM / 92706 / 42806HKIM No.0006-1/6

12 3 4 5 6

中文翻译

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与ISB-E48-0相关器件

型号	品牌	获取价格	描述	数据表
ISB-E48-1	SANYO	获取价格	Ultrathin Miniature Package Charger Circuit Voltage Sensor + 3 P-channel MOSFETs
ISC007N04NM6	INFINEON	获取价格	凭借先进的 40V OptiMOSTM 6 正常电平功率MOSFET，英飞凌为电池供电应
ISC009N06LM5	INFINEON	获取价格	ISC009N06LM5 为采用 SuperSO8 封装的英飞凌 OptiMOS™ MOS
ISC010N04NM6	INFINEON	获取价格	凭借先进的 40V OptiMOSTM 6 正常电平功率MOSFET，英飞凌为电池供电应
ISC010N06NM5	INFINEON	获取价格	英飞凌 OptiMOS™ 5 功率 MOSFET 60 V 采用 SuperSO8 封装
ISC011N03L5S	INFINEON	获取价格	凭借 OptiMOS™ 和 StrongIRFET™ 功率 MOSFET 系列产品组合，英
ISC011N06LM5	INFINEON	获取价格	ISC011N06LM5 为采用 SuperSO8 封装的英飞凌 OptiMOS? MOS
ISC012N04LM6	INFINEON	获取价格	ISC012N04LM6 OptiMOSTM 6 40V逻辑电平在分立功率 MOSFET
ISC012N04NM6	INFINEON	获取价格	ISC012N04NM6 是 BiC OptiMOS™ 6 40 V NL 产品系列的一部
ISC015N04NM5	INFINEON	获取价格	凭借正常电平 OptiMOSTM 5 40V 产品系列，英飞凌为需要正常电平（更高阈值电压

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