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IS93C86A-3GRA3 PDF预览

IS93C86A-3GRA3

更新时间： 2024-11-07 15:35:35
品牌 Logo 应用领域
美国芯成 - ISSI 可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟光电二极管内存集成电路
页数 文件大小 规格书
13页 82K
描述
EEPROM, 1KX16, Serial, CMOS, PDSO8, SOIC-8

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中文翻译

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IS93C86A-3GRA3 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Obsolete零件包装代码：SOIC
包装说明：SOP, SOP8,.25针数：8
Reach Compliance Code：not_compliantECCN代码：EAR99
HTS代码：8542.32.00.51风险等级：5.92
备用内存宽度：8最大时钟频率 (fCLK)：2 MHz
数据保留时间-最小值：40耐久性：1000000 Write/Erase Cycles
JESD-30 代码：R-PDSO-G8JESD-609代码：e0
内存密度：16384 bit内存集成电路类型：EEPROM
内存宽度：16功能数量：1
端子数量：8字数：1024 words
字数代码：1000工作模式：SYNCHRONOUS
最高工作温度：125 °C最低工作温度：-40 °C
组织：1KX16封装主体材料：PLASTIC/EPOXY
封装代码：SOP封装等效代码：SOP8,.25
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
并行/串行：SERIAL峰值回流温度（摄氏度）：NOT SPECIFIED
电源：3/5 V认证状态：Not Qualified
串行总线类型：MICROWIRE最大待机电流：0.000002 A
子类别：EEPROMs最大压摆率：0.002 mA
最大供电电压 (Vsup)：5.5 V最小供电电压 (Vsup)：2.5 V
标称供电电压 (Vsup)：5 V表面贴装：YES
技术：CMOS温度等级：AUTOMOTIVE
端子面层：Tin/Lead (Sn/Pb)端子形式：GULL WING
端子节距：1.27 mm端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED最长写入周期时间 (tWC)：5 ms
写保护：SOFTWAREBase Number Matches：1

IS93C86A-3GRA3 数据手册

 浏览型号IS93C86A-3GRA3的Datasheet PDF文件第2页浏览型号IS93C86A-3GRA3的Datasheet PDF文件第3页浏览型号IS93C86A-3GRA3的Datasheet PDF文件第4页浏览型号IS93C86A-3GRA3的Datasheet PDF文件第5页浏览型号IS93C86A-3GRA3的Datasheet PDF文件第6页浏览型号IS93C86A-3GRA3的Datasheet PDF文件第7页 
®
IS93C76A IS93C86A  
ISSI  
8K-BIT/16K-BIT SERIAL ELECTRICALLY  
ERASABLE PROM  
Preliminary Information  
APRIL 2005  
FEATURES  
DESCRIPTION  
®
• Industry-standard Microwire Interface  
— Non-volatile data storage  
IS93C76A/86A are 8kb/16kb non-volatile, ISSI  
serial EEPROMs. They are fabricated using an  
— Low voltage operation:  
enhanced CMOS design and process. IS93C76A/  
86A contains power-efficient read/write memory,  
and organization of either 1,024/2,048 bytes of 8  
bits or 512/1,024 words of 16 bits. When the  
ORG pin is connected to Vcc or left unconnected,  
x16 is selected; when it is connected to ground,  
x8 is selected.  
Vcc = 1.8V to 5.5V -2  
Vcc = 2.5V to 5.5V -3  
— Full TTL compatible inputs and outputs  
— Auto increment for efficient data dump  
• User Configured Memory Organization  
— By 16-bit or by 8-bit  
• Hardware and software write protection  
— Defaults to write-disabled state at power-up  
— Software instructions for write-enable/disable  
• Enhanced low voltage CMOS E2PROM  
technology  
• Versatile, easy-to-use Interface  
— Self-timed programming cycle  
— Automatic erase-before-write  
— Programming status indicator  
— Word and chip erasable  
An instruction set defines the operation of the  
devices, including read, write, and mode-enable  
functions. To protect against inadvertent data  
modification, all erase and write instructions are  
accepted only while the device are write-enabled.  
A selected x8 byte or x16 word can be modified  
with a single WRITE or ERASE instruction.  
Additionally, the two instructions WRITE ALL or  
ERASE ALL can program an entire array. Once a  
device begins its self-timed program procedure,  
the data out pin (Dout) can indicate the READY/  
BUSY status by raising chip select (CS). The self-  
timed write cycle includes an automatic erase-  
before-write capability. The devices can output  
any number of consecutive bytes/words using a  
single READ instruction.  
— Chip select enables power savings  
• Durable and reliable  
— 40-year data retention after 1M write cycles  
— 1 million write cycles  
— Unlimited read cycles  
— Schmitt-trigger Inputs  
• Industrial and Automotive Temperature Grade  
• Lead-free available  
FUNCTIONAL BLOCK DIAGRAM  
DUMMY  
BIT  
DOUT  
DATA  
REGISTER  
INSTRUCTION  
REGISTER  
R/W  
AMPS  
DIN  
EEPROM  
ARRAY  
ADDRESS  
REGISTER  
INSTRUCTION  
DECODE,  
CONTROL,  
AND  
ADDRESS  
DECODER  
CS  
1024/2048x8  
512/1024x16  
CLOCK  
SK  
GENERATION  
HIGH VOLTAGE  
GENERATOR  
WRITE  
ENABLE  
Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time  
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to  
obtain the latest version of this device specification before relying on any published information and before placing orders for products.  
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774  
Rev. 00E  
1
04/06/05  
1234567...13

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与IS93C86A-3GRA3相关器件

型号 品牌 获取价格 描述 数据表
IS93C86A-3GRI ISSI

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 		8K-BIT/16K-BIT SERIAL ELECTRICALLY ERASABLE PROM
IS93C86A-3GRLA3 ISSI

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 		8K-BIT/16K-BIT SERIAL ELECTRICALLY ERASABLE PROM
IS93C86A-3GRLI ISSI

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 		8K-BIT/16K-BIT SERIAL ELECTRICALLY ERASABLE PROM
IS93C86A-3PA3 ISSI

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 		EEPROM, 1KX16, Serial, CMOS, PDIP8, 0.300 INCH, PLASTIC, DIP-8
IS93C86A-3PI ISSI

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 		8K-BIT/16K-BIT SERIAL ELECTRICALLY ERASABLE PROM
IS93C86A-3PLA3 ISSI

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 		8K-BIT/16K-BIT SERIAL ELECTRICALLY ERASABLE PROM
IS93C86A-3PLI ISSI

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 		8K-BIT/16K-BIT SERIAL ELECTRICALLY ERASABLE PROM
IS93C86A-3ZA3 ISSI

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 		EEPROM, 1KX16, Serial, CMOS, PDSO8, 0.169 INCH, TSSOP-8
IS93C86A-3ZI ISSI

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 		8K-BIT/16K-BIT SERIAL ELECTRICALLY ERASABLE PROM
IS93C86A-3ZLA3 ISSI

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 		8K-BIT/16K-BIT SERIAL ELECTRICALLY ERASABLE PROM

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