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IS93C86A-3PLA3 PDF预览

IS93C86A-3PLA3

更新时间: 2024-09-23 23:15:07
品牌 Logo 应用领域
美国芯成 - ISSI 可编程只读存储器
页数 文件大小 规格书
13页 82K
描述
8K-BIT/16K-BIT SERIAL ELECTRICALLY ERASABLE PROM

IS93C86A-3PLA3 数据手册

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®
IS93C76A IS93C86A  
ISSI  
8K-BIT/16K-BIT SERIAL ELECTRICALLY  
ERASABLE PROM  
Preliminary Information  
MAY 2005  
FEATURES  
DESCRIPTION  
®
• Industry-standard Microwire Interface  
— Non-volatile data storage  
IS93C76A/86A are 8kb/16kb non-volatile, ISSI  
serial EEPROMs. They are fabricated using an  
— Low voltage operation:  
enhanced CMOS design and process. IS93C76A/  
86A contains power-efficient read/write memory,  
and organization of either 1,024/2,048 bytes of 8  
bits or 512/1,024 words of 16 bits. When the  
ORG pin is connected to Vcc or left unconnected,  
x16 is selected; when it is connected to ground,  
x8 is selected.  
Vcc = 1.8V to 5.5V -2  
Vcc = 2.5V to 5.5V -3  
— Full TTL compatible inputs and outputs  
— Auto increment for efficient data dump  
• User Configured Memory Organization  
— By 16-bit or by 8-bit  
• Hardware and software write protection  
— Defaults to write-disabled state at power-up  
— Software instructions for write-enable/disable  
• Enhanced low voltage CMOS E2PROM  
technology  
• Versatile, easy-to-use Interface  
— Self-timed programming cycle  
— Automatic erase-before-write  
— Programming status indicator  
— Word and chip erasable  
An instruction set defines the operation of the  
devices, including read, write, and mode-enable  
functions. To protect against inadvertent data  
modification, all erase and write instructions are  
accepted only while the device are write-enabled.  
A selected x8 byte or x16 word can be modified  
with a single WRITE or ERASE instruction.  
Additionally, the two instructions WRITE ALL or  
ERASE ALL can program an entire array. Once a  
device begins its self-timed program procedure,  
the data out pin (Dout) can indicate the READY/  
BUSY status by raising chip select (CS). The self-  
timed write cycle includes an automatic erase-  
before-write capability. The devices can output  
any number of consecutive bytes/words using a  
single READ instruction.  
— Chip select enables power savings  
• Durable and reliable  
— 40-year data retention after 1M write cycles  
— 1 million write cycles  
— Unlimited read cycles  
— Schmitt-trigger Inputs  
• Industrial and Automotive Temperature Grade  
• Lead-free available  
FUNCTIONAL BLOCK DIAGRAM  
DUMMY  
BIT  
DOUT  
DATA  
REGISTER  
INSTRUCTION  
REGISTER  
R/W  
AMPS  
DIN  
EEPROM  
ARRAY  
ADDRESS  
REGISTER  
INSTRUCTION  
DECODE,  
CONTROL,  
AND  
ADDRESS  
DECODER  
CS  
1024/2048x8  
512/1024x16  
CLOCK  
SK  
GENERATION  
HIGH VOLTAGE  
GENERATOR  
WRITE  
ENABLE  
Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time  
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to  
obtain the latest version of this device specification before relying on any published information and before placing orders for products.  
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774  
Rev. 00F  
1
05/26/05  

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