IS93C56A-2DLI

更新时间： 2024-01-19 01:14:09

品牌	Logo	应用领域
美国芯成 - ISSI		可编程只读存储器
页数	文件大小	规格书
16页	131K
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IS93C56A-2DLI 数据手册

IS93C56A

IS93C66A

ISSI

DC ELECTRICAL CHARACTERISTICS

TA = –40°C to +85°C for Industrial and –40°C to +125°C for Automotive.

Symbol Parameter

TestConditions

IOL = 100 µA

Vcc

Min.

Max.

0.2

Unit

VOL2

VOL1

VOH2

VOH1

VIH

OutputLOWVoltage

1.8V to 2.7V

2.7V to 5.5V

1.8V to 2.7V

2.7V to 5.5V

1.8V to 5.5V

—

OutputLOWVoltage

OutputHIGHVoltage

Input HIGH Voltage

Input LOW Voltage

InputLeakage

IOL = 2.1mA

0.4

IOH = –100 µA

IOH = –400 µA

VCC – 0.2

2.4

—

0.7XVCC

–0.3

VCC+1

0.2XVCC

2.5

VIL

ILI

VIN = 0V to VCC (CS, SK,

DIN,ORG)

µA

ILO

OutputLeakage

VOUT = 0V to VCC, CS = 0V

2.5

Notes:

Automotive grade devices in this table are tested with Vcc = 2.5V to 5.5V. An operation with Vcc <2.5V is not specified.

POWER SUPPLY CHARACTERISTICS

TA =–40°Cto+85°Cfor Industrial,–40°Cto+125°Cfor Automotive.

Symbol Parameter

Test Conditions

Vcc

Min. Typ. Max. Unit

ICC1

ICC2

I^SB1

ISB2

Vcc Read Supply Current CS = VIH, SK = 1 MHz, CMOS input levels

CS = VIH, SK = 2 MHz, CMOS input levels

1.8V

2.5V

5.0V

—

0.1

0.2

0.5

CS = VIH, SK = 2 MHz, CMOS input levels

Vcc Write Supply Current CS = VIH, SK = 1 MHz, CMOS input levels

CS = VIH, SK = 2 MHz, CMOS input levels

1.8V

2.5V

5.0V

—

0.5

CS = VIH, SK = 2 MHz, CMOS input levels

Standby Current

CS = GND, SK = GND,

ORG = VCC or Floating (x16)

1.8V

2.5V

5.0V

—

0.1

0.2

µA

CS = GND, SK = GND,

ORG = GND (x8)

1.8V

2.5V

—

µA

5.0V

—

µA

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

Rev. A

05/02/06

1...3 4 567 8 9...16

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