IS93C56A-2PLI

更新时间： 2024-02-17 01:17:12

品牌	Logo	应用领域
美国芯成 - ISSI		存储内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
页数	文件大小	规格书
16页	131K
描述
2K-BIT/4K-BIT SERIAL ELECTRICALLY ERASABLE PROM

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IS93C56A-2PLI 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
零件包装代码：	TSSOP	包装说明：	TSSOP, TSSOP8,.25
针数：	8	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8542.32.00.51
风险等级：	5.83	备用内存宽度：	8
最大时钟频率 (fCLK)：	1 MHz	数据保留时间-最小值：	40
耐久性：	1000000 Write/Erase Cycles	JESD-30 代码：	R-PDSO-G8
JESD-609代码：	e3	长度：	4.4 mm
内存密度：	2048 bit	内存集成电路类型：	EEPROM
内存宽度：	16	湿度敏感等级：	1
功能数量：	1	端子数量：	8
字数：	128 words	字数代码：	128
工作模式：	SYNCHRONOUS	最高工作温度：	85 °C
最低工作温度：	-40 °C	组织：	128X16
封装主体材料：	PLASTIC/EPOXY	封装代码：	TSSOP
封装等效代码：	TSSOP8,.25	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	并行/串行：	SERIAL
峰值回流温度（摄氏度）：	260	电源：	2/5 V
认证状态：	Not Qualified	座面最大高度：	1.2 mm
串行总线类型：	MICROWIRE	最大待机电流：	0.000001 A
子类别：	EEPROMs	最大压摆率：	0.003 mA
最大供电电压 (Vsup)：	5.5 V	最小供电电压 (Vsup)：	1.8 V
标称供电电压 (Vsup)：	2.5 V	表面贴装：	YES
技术：	CMOS	温度等级：	INDUSTRIAL
端子面层：	Matte Tin (Sn) - annealed	端子形式：	GULL WING
端子节距：	0.65 mm	端子位置：	DUAL
处于峰值回流温度下的最长时间：	40	宽度：	3 mm
最长写入周期时间 (tWC)：	10 ms	写保护：	SOFTWARE
Base Number Matches：	1

IS93C56A-2PLI 数据手册

IS93C56A IS93C66A

ISSI

2K-BIT/4K-BIT SERIAL ELECTRICALLY

ERASABLE PROM

MAY 2006

FEATURES

DESCRIPTION

• Industry-standard Microwire Interface

— Non-volatile data storage

The IS93C56A/66A are 2kb/4kb non-volatile,

ISSI serial EEPROMs. They are fabricated using

an enhanced CMOS design and process. The

IS93C56A/66A contain power-efficient read/write

memory, and organization of either 256/512 bytes

of 8 bits or 128/256 words of 16 bits. When the

ORG pin is connected to Vcc or left unconnected,

x16 is selected; when it is connected to ground,

x8 is selected. The IS93C56A/66A are fully

backward compatible with IS93C56/66.

— Wide voltage operation:

Vcc = 1.8V to 5.5V

— Auto increment for efficient data dump

• User Configured Memory Organization

— By 16-bit or by 8-bit

• Hardware and software write protection

— Defaults to write-disabled state at power-up

— Software instructions for write-enable/disable

• Enhanced low voltage CMOS E²PROM

technology

• Versatile, easy-to-use Interface

— Self-timed programming cycle

— Automatic erase-before-write

— Programming status indicator

— Word and chip erasable

An instruction set defines the operation of the

devices, including read, write, and mode-enable

functions. To protect against inadvertent data

modification, all erase and write instructions are

accepted only while the devices are write-enabled.

A selected x8 byte or x16 word can be modified

with a single WRITE or ERASE instruction.

Additionally, the two instructions WRITE ALL or

ERASE ALL can program an entire array. Once a

device begins its self-timed program procedure,

the data out pin (Dout) can indicate the READY/

BUSY status by raising chip select (CS). The self-

timed write cycle includes an automatic erase-

before-write capability. The devices can output

any number of consecutive bytes/words using a

single READ instruction.

— Chip select enables power savings

• Durable and reliable

— 40-year data retention after 1M write cycles

— 1 million write cycles

— Unlimited read cycles

— Schmitt-trigger inputs

• Industrial and Automotive Temperature Grade

• Lead-free available

FUNCTIONAL BLOCK DIAGRAM

DUMMY

BIT

OUT

DATA

INSTRUCTION

R/W

AMPS

EEPROM

ARRAY

ADDRESS

INSTRUCTION

DECODE,

CONTROL,

AND

ADDRESS

DECODER

256/512x8

128/256x16

CLOCK

GENERATION

HIGH VOLTAGE

GENERATOR

WRITE

ENABLE

without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to

obtain the latest version of this device specification before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

Rev. A

05/02/06

12 3 4 5 6 7...16

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