®
IS93C56A IS93C66A
ISSI
2K-BIT/4K-BIT SERIAL ELECTRICALLY
ERASABLE PROM
MAY 2006
FEATURES
DESCRIPTION
• Industry-standard Microwire Interface
— Non-volatile data storage
The IS93C56A/66A are 2kb/4kb non-volatile,
®
ISSI serial EEPROMs. They are fabricated using
an enhanced CMOS design and process. The
IS93C56A/66A contain power-efficient read/write
memory, and organization of either 256/512 bytes
of 8 bits or 128/256 words of 16 bits. When the
ORG pin is connected to Vcc or left unconnected,
x16 is selected; when it is connected to ground,
x8 is selected. The IS93C56A/66A are fully
backward compatible with IS93C56/66.
— Wide voltage operation:
Vcc = 1.8V to 5.5V
— Auto increment for efficient data dump
• User Configured Memory Organization
— By 16-bit or by 8-bit
• Hardware and software write protection
— Defaults to write-disabled state at power-up
— Software instructions for write-enable/disable
• Enhanced low voltage CMOS E2PROM
technology
• Versatile, easy-to-use Interface
— Self-timed programming cycle
— Automatic erase-before-write
— Programming status indicator
— Word and chip erasable
An instruction set defines the operation of the
devices, including read, write, and mode-enable
functions. To protect against inadvertent data
modification, all erase and write instructions are
accepted only while the devices are write-enabled.
A selected x8 byte or x16 word can be modified
with a single WRITE or ERASE instruction.
Additionally, the two instructions WRITE ALL or
ERASE ALL can program an entire array. Once a
device begins its self-timed program procedure,
the data out pin (Dout) can indicate the READY/
BUSY status by raising chip select (CS). The self-
timed write cycle includes an automatic erase-
before-write capability. The devices can output
any number of consecutive bytes/words using a
single READ instruction.
— Chip select enables power savings
• Durable and reliable
— 40-year data retention after 1M write cycles
— 1 million write cycles
— Unlimited read cycles
— Schmitt-trigger inputs
• Industrial and Automotive Temperature Grade
• Lead-free available
FUNCTIONAL BLOCK DIAGRAM
DUMMY
BIT
D
OUT
DATA
REGISTER
INSTRUCTION
REGISTER
R/W
AMPS
D
IN
EEPROM
ARRAY
ADDRESS
REGISTER
INSTRUCTION
DECODE,
CONTROL,
AND
ADDRESS
DECODER
CS
256/512x8
128/256x16
CLOCK
SK
GENERATION
HIGH VOLTAGE
GENERATOR
WRITE
ENABLE
Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
1
Rev. A
05/02/06
5秒后页面跳转
AO3401场效应管参数、引脚图、应用原理图
BT131可控硅参数及引脚图、工作原理详解
74LS32芯片参数、引脚图及功能真值表
全球首块英伟达H200交付 黄仁勋“送货上门”
微信公众号
抖音公众号
浙公网安备 33010502006866号 浙ICP备10014259号-119
营业执照ICP证
数据手册
如果您发现信息不准确，
