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IS7-1845ASRH-8S9000 PDF预览

IS7-1845ASRH-8S9000

更新时间： 2024-09-26 06:39:31
品牌 Logo 应用领域
瑞萨 - RENESAS 信息通信管理开关
页数 文件大小 规格书
3页 145K
描述
Switching Controller, Current-mode, BICMOS, CDIP8

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中文翻译

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IS7-1845ASRH-8S9000 技术参数

生命周期：Transferred包装说明：DIP,
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8542.39.00.01风险等级：5.84
模拟集成电路 - 其他类型：SWITCHING CONTROLLER控制模式：CURRENT-MODE
控制技术：PULSE WIDTH MODULATION最大输入电压：20 V
最小输入电压：12 VJESD-30 代码：R-CDIP-T8
功能数量：1端子数量：8
最高工作温度：125 °C最低工作温度：-50 °C
封装主体材料：CERAMIC, METAL-SEALED COFIRED封装代码：DIP
封装形状：RECTANGULAR封装形式：IN-LINE
表面贴装：NO技术：BICMOS
温度等级：AUTOMOTIVE端子形式：THROUGH-HOLE
端子位置：DUAL总剂量：300k Rad(Si) V

IS7-1845ASRH-8S9000 数据手册

 浏览型号IS7-1845ASRH-8S9000的Datasheet PDF文件第2页浏览型号IS7-1845ASRH-8S9000的Datasheet PDF文件第3页 
Single Event Radiation Hardened High Speed, Current  
Mode PWM  
IS-1845ASRH, IS-1845ASEH  
Features  
• Electrically Screened to DSCC SMD # 5962-01509  
The IS-1845ASRH, IS-1845ASEH are  
designed to be used in switching  
power supplies operating in current-  
mode. The rising edge of the on-chip  
• QML Qualified per MIL-PRF-38535 Requirements  
TM  
• Radiation Environment  
- High Dose Rate. . . . . . . . . . . . . . . . . . . . .300 krad(SI) (Max)  
- Low Dose Rate . . . . . . . . . . . . . . . . . . . . . .50 krad(SI) (Max)  
- SEL Immune . . . . . . . . . . . . . . . . . . . . Dielectrically Isolated  
oscillator turns on the output. Turn-off  
is controlled by the current sense comparator and occurs when  
the sensed current reaches a peak controlled by the error  
amplifier.  
2
- SEU Immune. . . . . . . . . . . . . . . . . . . . . . . . 35MeV/mg/cm  
2
-6  
2
Constructed with Intersil’s Rad Hard Silicon Gate (RSG)  
dielectrically isolated BiCMOS process, these devices are  
immune to single event latch-up and have been specifically  
designed to provide a high level of immunity to single event  
transients. All specified parameters are guaranteed and tested  
for 300krad(Si) total dose performance at a high dose rate and  
50krad(Si) total dose at a low dose rate.  
- SEU Cross-Section at 89MeV/mg/cm . . . . . . 5 x 10 cm  
• Low Start-up Current . . . . . . . . . . . . . . . . . . . . . . . 100µA (Typ)  
• Fast Propagation Delay . . . . . . . . . . . . . . . . . . . . . . . 80ns (Typ)  
• Supply Voltage Range . . . . . . . . . . . . . . . . . . . . . . . 12V to 20V  
• High Output Drive. . . . . . . . . . . . . . . . . . . . . . . . 1A (Peak, Typ)  
• Undervoltage Lockout . . . . . 8.8V Start (Typ), 8.2V Stop (Typ)  
Detailed Electrical Specifications for these devices are  
contained in the SMD 5962-01509. A “hot-link” is also  
provided on our website for downloading the SMD.  
Applications  
• Current-Mode Switching Power Supplies  
• Control of High Current FET Drivers  
• Motor Speed and Direction Control  
Pin Configurations  
IS7-1845ASRH, IS7-1845ASEH  
(8 LD CDIP2-T8 SBDIP)  
TOP VIEW  
IS9-1845ASRH, IS9-1845ASEH  
(18 LD FLATPACK)  
TOP VIEW  
NC  
COMP  
VFB  
1
2
3
4
5
6
7
8
9
NC  
18  
17  
COMP  
VFB  
1
2
3
4
8
7
6
5
VREF  
VCC  
OUT  
GND  
VREF  
VCC  
VC  
16  
15  
14  
13  
12  
11  
10  
ISENSE  
RTCT  
NC  
NC  
OUT  
NC  
NC  
ISENSE  
RTCT  
NC  
GND  
OSCGND  
NC  
NOTES:  
1. Grounding the COMP pin does not inhibit the output. The output may be inhibited by applying >1.2V to the ISENSE pin.  
2. This part should be operated with C = 3.3nF and R = 10k timing components only.  
t
t
July 13, 2012  
FN9001.5  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
1-888-INTERSIL or 1-888-468-3774 |Copyright Intersil Americas Inc. 2003, 2008, 2012. All Rights Reserved  
Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries.  
All other trademarks mentioned are the property of their respective owners.  
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与IS7-1845ASRH-8S9000相关器件

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IS7-1845ASRH-Q INTERSIL

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IS71V08F32AS08-8585BI ISSI

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IS71V08F32BS08-7070BI ISSI

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IS71V08F32CS08-7070BI ISSI

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 		Memory Circuit, Flash+SRAM, 2MX16, CMOS, PBGA73, 8 X 11.60 MM, 0.80 MM PITCH, MINI, BGA-73
IS71V08F32CS08-8570BI ISSI

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 		Memory Circuit, Flash+SRAM, 2MX16, CMOS, PBGA73, 8 X 11.60 MM, 0.80 MM PITCH, MINI, BGA-73
IS71V08F32CS08-8585BI ISSI

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 		Memory Circuit, Flash+SRAM, 2MX16, CMOS, PBGA73, 8 X 11.60 MM, 0.80 MM PITCH, MINI, BGA-73

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