Datasheet > IS6806A

IS6806A

更新时间： 2024-11-12 17:01:35

品牌	Logo	应用领域
长工微电子 - INNOVISIONSEMI		驱动
页数	文件大小	规格书
1页	157K
描述
内部集成驱动功率MOS，单相带载75A

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IS6806A 数据手册

IS6806A

75A Smart Power Stage with Current Sensing and Thermal Monitoring

Rev1.9.1 3/2022

Description

Features

The IS6806A is an integrated power stage

solution optimized for low duty cycle synchronous

buck applications. It offers high current, high

efficiency and great thermal performance with

high power density. Packaged in 5 mm x 6 mm

MLP, IS6806A enables VR design to deliver in

excess of 75 A per phase current.

•

Optimize MOSFET switching performance with

integrated Schottky diode in LS MOSFET

•

Up to 75 A output current capability

High frequency operation up to 2 MHz

Power MOSFETs optimized for 12 V input stage

and 10 % to 15 % duty cycle operation

The internal power MOSFETs delivers industry

benchmark performance in minimizing switching

and conduction losses.

•

3.3 V PWM logic with tri-state and hold-off

PWM minimum controllable on time of 30 ns

The IS6806A incorporates internal MOSFET gate

driver IC that features high current driving

capability, adaptive dead-time control, and

integrated bootstrap switch, a thermal monitor that

alerts the system of excessive high junction

temperature. This driver is also compatible with

wide range of PWM controllers with the support of

both 3.3 V and 5 V PWM logic with tri-state. Diode

emulation mode can be enabled at light loads

through the use of GLCTRL signal. The device

also integrates a current monitor to provide a real

time current monitoring function (I_MON) (scale down

Diode emulation mode at light loads for high

efficiency over the full load range using

GLCTRL pin

•

Low PWM propagation delay (< 20 ns)

Current sense monitor (IMON)

Temperature monitor (TMON)

Over temperature alert

HS MOSFET over-current and short alert

Under voltage lockout for VDRV and VCC

Thermally enhanced MLP56-39L package

version of the output inductor current).

Efficiency

temperature monitor provides the system an

indication of the power stage internal temperature

(T_MON) and can be used to throttle the system

operation down to a safer level if needed. The

device also integrates fault alerts such as HS FET

over-current, over temperature and HS MOSFET

short failures.

Applications

•

Multi-phase VRs for CPU, GPU, and memory

power

•

DC/DC VR modules

Preliminary Datasheet

Innovision Semiconductor

中文翻译

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与IS6806A相关器件

型号	品牌	获取价格	描述	数据表
IS6809A	INNOVISIONSEMI	获取价格	内部集成驱动功率MOS，单相带载70A
IS6811A	INNOVISIONSEMI	获取价格	单相带载30A，最高能达160A
IS68S	HUTSON	获取价格	Silicon Controlled Rectifier, 8A I(T)RMS, 8000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element
IS6MC256A-60	ISSI	获取价格	Cache Tag SRAM Module, 32KX64, CMOS
IS6MC256A-66	ISSI	获取价格	Cache Tag SRAM Module, 32KX64, CMOS
IS6MC256K-50	ETC	获取价格	x64 Interleaved Burst Mode SRAM Module
IS6MC256K-60	ETC	获取价格	x64 Interleaved Burst Mode SRAM Module
IS6MC256K-66	ETC	获取价格	x64 Interleaved Burst Mode SRAM Module
IS6MC256S-50	ISSI	获取价格	Cache Tag SRAM Module, 64KX32, CMOS
IS6MC256S-60	ISSI	获取价格	Cache Tag SRAM Module, 64KX32, CMOS

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