Datasheet > IS67WVE4M16TCLL-70BLA1

IS67WVE4M16TCLL-70BLA1

更新时间： 2024-11-14 19:49:43

品牌	Logo	应用领域
美国芯成 - ISSI		内存集成电路
页数	文件大小	规格书
34页	684K
描述
Pseudo Static RAM, 4MX16, 70ns, CMOS, PBGA48, 6 X 8 MM, LEAD FREE, MO-207, TFBGA-48

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

IS67WVE4M16TCLL-70BLA1 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	TFBGA, BGA48,6X8,30	Reach Compliance Code：	compliant
HTS代码：	8542.32.00.41	风险等级：	5.76
最长访问时间：	70 ns	I/O 类型：	COMMON
JESD-30 代码：	R-PBGA-B48	JESD-609代码：	e1
长度：	8 mm	内存密度：	67108864 bit
内存集成电路类型：	PSEUDO STATIC RAM	内存宽度：	16
功能数量：	1	端口数量：	1
端子数量：	48	字数：	4194304 words
字数代码：	4000000	工作模式：	ASYNCHRONOUS
最高工作温度：	85 °C	最低工作温度：	-40 °C
组织：	4MX16	输出特性：	3-STATE
可输出：	NO	封装主体材料：	PLASTIC/EPOXY
封装代码：	TFBGA	封装等效代码：	BGA48,6X8,30
封装形状：	RECTANGULAR	封装形式：	GRID ARRAY, THIN PROFILE, FINE PITCH
并行/串行：	PARALLEL	峰值回流温度（摄氏度）：	260
反向引出线：	NO	筛选级别：	AEC-Q100
座面最大高度：	1.2 mm	最大待机电流：	0.00015 A
最小待机电流：	1.7 V	最大压摆率：	0.025 mA
最大供电电压 (Vsup)：	1.95 V	最小供电电压 (Vsup)：	1.7 V
表面贴装：	YES	技术：	CMOS
温度等级：	INDUSTRIAL	端子面层：	Tin/Silver/Copper (Sn/Ag/Cu)
端子形式：	BALL	端子节距：	0.75 mm
端子位置：	BOTTOM	处于峰值回流温度下的最长时间：	10
宽度：	6 mm	Base Number Matches：	1

IS67WVE4M16TCLL-70BLA1 数据手册

浏览型号IS67WVE4M16TCLL-70BLA1的Datasheet PDF文件第2页

浏览型号IS67WVE4M16TCLL-70BLA1的Datasheet PDF文件第3页

浏览型号IS67WVE4M16TCLL-70BLA1的Datasheet PDF文件第4页

浏览型号IS67WVE4M16TCLL-70BLA1的Datasheet PDF文件第5页

浏览型号IS67WVE4M16TCLL-70BLA1的Datasheet PDF文件第6页

浏览型号IS67WVE4M16TCLL-70BLA1的Datasheet PDF文件第7页

IS66/67WVE4M16EALL/EBLL/ECLL

IS66/67WVE4M16TALL/TBLL/TCLL

64Mb Async/Page PSRAM

NOVEMBER 2015

Overview

The IS66/67WVE4M16EALL/BLL/CLL and IS66/67WVE4M16TALL/BLL/CLL integrated memory device

containing 64Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 4M

words by 16 bits. The device includes several power saving modes : Partial Array Refresh mode where

data is retained in a portion of the array and Deep Power Down mode. Both these modes reduce standby

current drain. The die has separate power rails, VDDQ and VSSQ for the I/O to be run from a separate

power supply from the device core.

Features

 Asynchronous and page mode interface

 Dual voltage rails for optional performance

 Low Power Feature

 Temperature Controlled Refresh

 Partial Array Refresh

 Deep power-down (DPD) mode

 Operating temperature Range

 ALL: VDD 1.7V~1.95V, VDDQ 1.7V~1.95V

 BLL: VDD 2.7V~3.6V, VDDQ 2.7V~3.6V

 CLL: VDD 1.7V~1.95V, VDDQ 2.7V~3.6V

 Page mode read access

 Interpage Read access : 60ns, 70ns

 Intrapage Read access : 25ns

 Low Power Consumption

 Asynchronous Operation < 30 mA

 Intrapage Read < 23mA

 Standby < 200 uA (max.)

 Deep power-down (DPD)

 ALL/CLL: < 3µA (Typ)

Industrial: -40°C~85°C

Automotive A1: -40°C~85°C

 Packages:

48-ball TFBGA

 BLL: < 10µA (Typ)

Notes:

1. The 48-pin TSOP-I package option is not yet available. Please contact SRAM Marketing at sram@issi.com

for additional information.

products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services

described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information

and before placing orders for products.

Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or

malfunction of the product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or

effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to

its satisfaction, that:

a.) the risk of injury or damage has been minimized;

b.) the user assume all such risks; and

c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances

Rev. D | Oct. 2015

www.issi.com - SRAM@issi.com

12 3 4 5 6 7...34

中文翻译

下载PDF

与IS67WVE4M16TCLL-70BLA1相关器件

型号	品牌	获取价格	描述	数据表
IS67WVE51216BLL	ISSI	获取价格	Asynchronous and page mode interface
IS67WVE51216CLL	ISSI	获取价格	Asynchronous and page mode interface
IS67WVE51216EALL	ISSI	获取价格	Asynchronous and page mode interface
IS67WVH16M8ALL-166B1LA2	ISSI	获取价格	Pseudo Static RAM, 16MX8, 36ns, CMOS, PBGA24, TFBGA-24
IS67WVO16M8DBLL-100BLA3	ISSI	获取价格	SRAM,
IS67WVO16M8DBLL-133BLA3	ISSI	获取价格	SRAM,
IS67WVO16M8EDALL-100BLA2	ISSI	获取价格	SRAM,
IS67WVO16M8EDALL-100BLI	ISSI	获取价格	SRAM,
IS67WVO16M8EDALL-100WLA2	ISSI	获取价格	SRAM,
IS67WVO16M8EDALL-100WLI	ISSI	获取价格	SRAM,

与IS67WVE4M16TCLL-70BLA1相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

2
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

2
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

29
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

12

产品中心

服务支持

精选活动

关于我们

帮助中心

IS67WVE4M16TCLL-70BLA1

IS67WVE4M16TCLL-70BLA1 技术参数

IS67WVE4M16TCLL-70BLA1 数据手册

与IS67WVE4M16TCLL-70BLA1相关器件

与IS67WVE4M16TCLL-70BLA1相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IS67WVE4M16TCLL-70BLA1

IS67WVE4M16TCLL-70BLA1 技术参数

IS67WVE4M16TCLL-70BLA1 数据手册

与IS67WVE4M16TCLL-70BLA1相关器件

与IS67WVE4M16TCLL-70BLA1相关文章

您还可以找

您在本页遇到什么问题？