Datasheet > IS66WV25616ALL-70BLI

IS66WV25616ALL-70BLI

更新时间： 2024-09-27 07:32:07

品牌	Logo	应用领域
美国芯成 - ISSI		/
页数	文件大小	规格书
16页	497K
描述
Pseudo Static RAM, 256KX16, 70ns, CMOS, PBGA48, 8 X 13 MM, LEAD FREE, MINI, BGA-48

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fabricatedusingISSI's

high-performance

CMOStechnology.ꢀ

IS66WV25616ALL

IS66WV25616BLL

4Mb LOW VOLTAGE,

ULTRA LOW POWER PSEUDO CMOS STATIC RAM

PRELIMINARY INFORMATION

JANUARY 2008

FEATURES

DESCRIPTION

•ꢀ High-speedꢀaccessꢀtime:ꢀꢀ55ns

•ꢀ CMOSꢀlowꢀpowerꢀoperation

– mW (typical) operating

Theꢀ ISSIꢀ IS66WV25616ALL/BLLꢀ isꢀ aꢀ high-speed,ꢀ 4Mꢀ

bitꢀstaticꢀRAMsꢀorganizedꢀasꢀ256Kꢀwordsꢀbyꢀ16ꢀbits.ꢀItꢀisꢀ

Thisꢀhighlyꢀreliableꢀprocessꢀcoupledꢀwithꢀinnovativeꢀcircuitꢀ

designꢀtechniques,ꢀyieldsꢀhigh-performanceꢀandꢀlowꢀpowerꢀ

consumption devices.

ꢀ –ꢀꢀµWꢀ(typical)ꢀCMOSꢀstandby

•ꢀ Singleꢀpowerꢀsupplyꢀꢀ

When CS1ꢀisꢀHIGHꢀ(deselected)ꢀorꢀwhenꢀCS2ꢀisꢀLOW

(deselected) or both LB and UBꢀareꢀHIGH,ꢀtheꢀdeviceꢀ

assumes a standby mode at which the power dissipation

canꢀbeꢀreducedꢀdownꢀwithꢀCMOSꢀinputꢀlevels.

ꢀ –ꢀ1.7V--1.95VꢀV^{d d}(66WV25616ALL) (70ns)

ꢀ –ꢀ2.5V--3.6VꢀV^{d d}(66WV25616BLL) (55ns)

•ꢀ Threeꢀstateꢀoutputs

•ꢀ Dataꢀcontrolꢀforꢀupperꢀandꢀlowerꢀbytes

•ꢀ Industrialꢀtemperatureꢀavailableꢀ

•ꢀ Lead-freeꢀavailableꢀ

Easy memory expansion is provided by using Chip Enable

andꢀOutputꢀEnableꢀinputs.ꢀTheꢀactiveꢀLOWꢀWriteꢀEnableꢀ

(WE) controls both writing and reading of the memory. A

dataꢀbyteꢀallowsꢀUpperꢀByteꢀ(UB)ꢀandꢀLowerꢀByteꢀ(LB)

access.

TheꢀIS66WV25616ALL/BLLꢀisꢀpackagedꢀinꢀtheꢀJEDECꢀ

standardꢀ48-pinꢀminiꢀBGAꢀ(6mmꢀxꢀ8mm)ꢀandꢀ44-PinꢀTSOPꢀ

(TYPEꢀII).ꢀTheꢀdeviceꢀisꢀasloꢀavailableꢀforꢀdieꢀsales.

FUNCTIONAL BLOCK DIAGRAM

256K x 16

MEMORY ARRAY

A0-A17

DECODER

GND

I/O0-I/O7

Lower Byte

I/O

DATA

COLUMN I/O

CIRCUIT

I/O8-I/O15

Upper Byte

CS2

CS1

CONTROL

CIRCUIT

liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device speciﬁcation before relying on

any published information and before placing orders for products.

Integrated Silicon Solution, Inc. — www.issi.com

Rev. 00A

12/20/07

12 3 4 5 6 7...16

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与IS66WV25616ALL-70BLI相关器件

型号	品牌	获取价格	描述	数据表
IS66WV25616BLL-55BLI	ISSI	获取价格	Pseudo Static RAM, 256KX16, 55ns, CMOS, PBGA48, 8 X 13 MM, LEAD FREE, MINI, BGA-48
IS66WV25616BLL-55TLI	ISSI	获取价格	Pseudo Static RAM, 256KX16, 55ns, CMOS, PDSO44, LEAD FREE, TSOP2-44
IS66WV51216ALL	ISSI	获取价格	8Mb LOW VOLTAGE, ULTRA LOW POWER PSEUDO CMOS STATIC RAM
IS66WV51216ALL-70BLI	ISSI	获取价格	8Mb LOW VOLTAGE, ULTRA LOW POWER PSEUDO CMOS STATIC RAM
IS66WV51216ALL-70TLI	ISSI	获取价格	8Mb LOW VOLTAGE, ULTRA LOW POWER PSEUDO CMOS STATIC RAM
IS66WV51216BLL	ISSI	获取价格	8Mb LOW VOLTAGE, ULTRA LOW POWER PSEUDO CMOS STATIC RAM
IS66WV51216BLL-55BLI	ISSI	获取价格	8Mb LOW VOLTAGE, ULTRA LOW POWER PSEUDO CMOS STATIC RAM
IS66WV51216BLL-55TLI	ISSI	获取价格	8Mb LOW VOLTAGE, ULTRA LOW POWER PSEUDO CMOS STATIC RAM
IS66WV51216DALL	ISSI	获取价格	8Mb LOW VOLTAGE, ULTRA LOW POWER PSEUDO CMOS STATIC RAM
IS66WV51216DALL-70BLI	ISSI	获取价格	Pseudo Static RAM, 512KX16, 70ns, CMOS, PBGA48, 6 X 8 MM, LEAD FREE, MO-207, BGA-48

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