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IS64WV6416BLL-15TLA3 PDF预览

IS64WV6416BLL-15TLA3

更新时间: 2024-11-27 03:02:35
品牌 Logo 应用领域
美国芯成 - ISSI /
页数 文件大小 规格书
16页 101K
描述
64K x 16 HIGH-SPEED CMOS STATIC RAM

IS64WV6416BLL-15TLA3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TSOP2
包装说明:TSOP2, TSOP44,.46,32针数:44
Reach Compliance Code:compliantECCN代码:3A991.B.2.B
HTS代码:8542.32.00.41Factory Lead Time:12 weeks
风险等级:2.19最长访问时间:15 ns
I/O 类型:COMMONJESD-30 代码:R-PDSO-G44
JESD-609代码:e3长度:18.415 mm
内存密度:1048576 bit内存集成电路类型:STANDARD SRAM
内存宽度:16湿度敏感等级:3
功能数量:1端子数量:44
字数:65536 words字数代码:64000
工作模式:ASYNCHRONOUS最高工作温度:125 °C
最低工作温度:-40 °C组织:64KX16
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:TSOP2封装等效代码:TSOP44,.46,32
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL峰值回流温度(摄氏度):260
电源:2.7/3.3 V认证状态:Not Qualified
筛选级别:AEC-Q100座面最大高度:1.2 mm
最大待机电流:0.075 A最小待机电流:1.8 V
子类别:SRAMs最大压摆率:0.05 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.5 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:AUTOMOTIVE
端子面层:Matte Tin (Sn) - annealed端子形式:GULL WING
端子节距:0.8 mm端子位置:DUAL
处于峰值回流温度下的最长时间:10宽度:10.16 mm

IS64WV6416BLL-15TLA3 数据手册

 浏览型号IS64WV6416BLL-15TLA3的Datasheet PDF文件第2页浏览型号IS64WV6416BLL-15TLA3的Datasheet PDF文件第3页浏览型号IS64WV6416BLL-15TLA3的Datasheet PDF文件第4页浏览型号IS64WV6416BLL-15TLA3的Datasheet PDF文件第5页浏览型号IS64WV6416BLL-15TLA3的Datasheet PDF文件第6页浏览型号IS64WV6416BLL-15TLA3的Datasheet PDF文件第7页 
®
IS64WV6416BLL  
IS61WV6416BLL  
ISSI  
64K x 16 HIGH-SPEED CMOS STATIC RAM  
NOVEMBER 2005  
FEATURES  
DESCRIPTION  
TheISSIIS61/64WV6416BLLisahigh-speed,1,048,576-  
bit static RAM organized as 65,536 words by 16 bits. It is  
fabricated using ISSI's high-performance CMOS  
technology.Thishighlyreliableprocesscoupledwithinno-  
vative circuit design techniques, yields access times as  
fast as 12ns (3.3V + 10%) and 15ns (2.5V-3.6V) with low  
powerconsumption.  
• High-speed access time:  
12 ns: 3.3V + 10%  
15 ns: 2.5V-3.6V  
• CMOS low power operation:  
50 mW (typical) operating  
25 µW (typical) standby  
• TTL compatible interface levels  
When CE is HIGH (deselected), the device assumes a  
standby mode at which the power dissipation can be  
reduced down with CMOS input levels.  
• Fully static operation: no clock or refresh  
required  
• Three state outputs  
EasymemoryexpansionisprovidedbyusingChipEnable  
and Output Enable inputs, CE and OE. The active LOW  
Write Enable (WE) controls both writing and reading of the  
memory. A data byte allows Upper Byte (UB) and Lower  
Byte (LB) access.  
• Data control for upper and lower bytes  
• Automotive Temperature Available  
• Lead-free available  
The IS61/64WV6416BLL is packaged in the JEDEC stan-  
dard 44-pin TSOP-II, and 48-pin mini BGA (6mm x 8mm).  
FUNCTIONAL BLOCK DIAGRAM  
64K x 16  
MEMORY ARRAY  
A0-A15  
DECODER  
V
DD  
GND  
I/O0-I/O7  
Lower Byte  
I/O  
DATA  
CIRCUIT  
COLUMN I/O  
I/O8-I/O15  
Upper Byte  
CE  
OE  
WE  
CONTROL  
CIRCUIT  
UB  
LB  
Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability  
arisingoutoftheapplicationoruseofanyinformation, productsorservicesdescribedherein. Customersareadvisedtoobtainthelatestversionofthisdevicespecificationbeforerelyingonany  
publishedinformationandbeforeplacingordersforproducts.  
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774  
Rev. B  
1
11/08/05  

IS64WV6416BLL-15TLA3 替代型号

型号 品牌 替代类型 描述 数据表
IS64WV6416BLL-15TA3 ISSI

完全替代

64K x 16 HIGH-SPEED CMOS STATIC RAM

与IS64WV6416BLL-15TLA3相关器件

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IS64WV6416DBLL/DBLS ISSI

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64K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS64WV6416DBLL-10BA3 ISSI

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Standard SRAM, 64KX16, 10ns, CMOS, PBGA48, 6 X 8 MM, MO-207, TFBGA-48
IS64WV6416DBLL-10BLA3 ISSI

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Standard SRAM, 64KX16, 10ns, CMOS, PBGA48, 6 X 8 MM, MO-207, LEAD FREE, TFBGA-48
IS64WV6416DBLL-10CTLA3 ISSI

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Standard SRAM, 64KX16, 10ns, CMOS, PDSO44, LEAD FREE, TSOP2-44
IS64WV6416EEBLL ISSI

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64K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC
IS64WV6416EEBLL-10BA1 ISSI

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Standard SRAM, 64KX16, 10ns, CMOS, PBGA48, 6 X 8 MM, MO-207, TFBGA-48
IS64WV6416EEBLL-10BA3 ISSI

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Standard SRAM, 64KX16, 10ns, CMOS, PBGA48, 6 X 8 MM, MO-207, TFBGA-48
IS64WV6416EEBLL-10CTA1 ISSI

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64K X 16 STANDARD SRAM, 10ns, PDSO44, 0.400 INCH, TSOP2-44
IS64WV6416EEBLL-10CTLA1 ISSI

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Standard SRAM, 64KX16, 10ns, CMOS, PDSO44, 0.400 INCH, LEAD FREE, TSOP2-44
IS64WV6416EEBLL-10CTLA3-TR ISSI

获取价格

IC SRAM 1MBIT 10NS 44TSOP