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IS62WV1288DBLL-45BI-TR PDF预览

IS62WV1288DBLL-45BI-TR

更新时间: 2024-10-02 15:35:35
品牌 Logo 应用领域
美国芯成 - ISSI 静态存储器内存集成电路
页数 文件大小 规格书
16页 432K
描述
Standard SRAM, 128KX8, 45ns, CMOS, PBGA36,

IS62WV1288DBLL-45BI-TR 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:compliant风险等级:5.84
最长访问时间:45 nsI/O 类型:COMMON
JESD-30 代码:R-PBGA-B36内存密度:1048576 bit
内存集成电路类型:STANDARD SRAM内存宽度:8
端子数量:36字数:131072 words
字数代码:128000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:128KX8输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:FBGA
封装等效代码:BGA36,6X8,30封装形状:RECTANGULAR
封装形式:GRID ARRAY, FINE PITCH并行/串行:PARALLEL
电源:2.5/3.3 V认证状态:Not Qualified
最大待机电流:0.000004 A最小待机电流:1.2 V
子类别:SRAMs最大压摆率:0.008 mA
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子形式:BALL
端子节距:0.75 mm端子位置:BOTTOM
Base Number Matches:1

IS62WV1288DBLL-45BI-TR 数据手册

 浏览型号IS62WV1288DBLL-45BI-TR的Datasheet PDF文件第2页浏览型号IS62WV1288DBLL-45BI-TR的Datasheet PDF文件第3页浏览型号IS62WV1288DBLL-45BI-TR的Datasheet PDF文件第4页浏览型号IS62WV1288DBLL-45BI-TR的Datasheet PDF文件第5页浏览型号IS62WV1288DBLL-45BI-TR的Datasheet PDF文件第6页浏览型号IS62WV1288DBLL-45BI-TR的Datasheet PDF文件第7页 
performanceCMOStechnology.Thishighlyreliableprocessꢀ  
                                                                            
IS62WV1288DALL/DBLL  
IS65WV1288DALL/DBLL  
128Kꢀxꢀ8ꢀLOWꢀVOLTAGE,ꢀ  
DECEMBERꢀ2010  
ULTRAꢀLOWꢀPOWERꢀCMOSꢀSTATICꢀRAM  
FEATURES  
DESCRIPTION  
TheISSIIS62/65WV1288DALLandIS62/65WV1288DBLLꢀ  
areꢀ ꢀ high-speed,ꢀ 1Mꢀ bitꢀ staticꢀ RAMsꢀ organizedꢀ asꢀ  
128Kꢀwordsꢀbyꢀ8ꢀbits.ꢀItꢀisꢀfabricatedꢀusingꢀISSI'sꢀhigh-  
•ꢀ High-speedꢀaccessꢀtime:ꢀꢀ35ns,ꢀ45ns,ꢀ55ns  
•ꢀ CMOSꢀlowꢀpowerꢀoperation:  
ꢀ 12ꢀmWꢀ(typical)ꢀoperating  
coupledꢀwithꢀinnovativeꢀcircuitꢀdesignꢀtechniques,ꢀyieldsꢀ  
high-performanceꢀandꢀlowꢀpowerꢀconsumptionꢀdevices.  
ꢀ ꢀ4ꢀµWꢀ(typical)ꢀCMOSꢀstandby  
•ꢀ TTLꢀcompatibleꢀinterfaceꢀlevels  
•ꢀ Singleꢀpowerꢀsupply:ꢀꢀ  
WhenCS1isHIGH(deselected)orwhenCS2isLOWꢀ  
(deselected),ꢀ theꢀ deviceꢀ assumesꢀ aꢀ standbyꢀ modeꢀ atꢀ  
whichthepowerdissipationcanbereduceddownwithꢀ  
CMOSꢀinputꢀlevels.  
ꢀ ꢀ1.65V--2.2VꢀVdd (62WV1288dALL)  
ꢀ ꢀ2.3V--3.6VꢀVdd (62WV1288dBLL)  
EasymemoryexpansionꢀisꢀprovidedꢀbyꢀusingꢀChipꢀEnableꢀ  
andꢀOutputꢀEnableꢀinputs.ꢀTheꢀactiveꢀLOWꢀWriteꢀEnableꢀ  
(WE)ꢀcontrolsꢀbothꢀwritingꢀandꢀreadingꢀofꢀtheꢀmemory.  
•ꢀ Fullyꢀstaticꢀoperation:ꢀnoꢀclockꢀorꢀrefreshꢀ  
required  
TheIS62/65WV1288DALLandIS62/65WV1288DBLLareꢀ  
packagedꢀinꢀtheꢀJEDECꢀstandardꢀ32-pinꢀTSOPꢀ(TYPEI),ꢀ  
sTSOPꢀ(TYPEI),ꢀSOP,ꢀandꢀ36-pinꢀminiꢀBGA.  
•ꢀ Threeꢀstateꢀoutputs  
•ꢀ Industrialꢀandꢀautomotiveꢀtemperatureꢀsupport  
•ꢀ Lead-freeꢀavailableꢀ  
FUNCTIONALꢀBLOCKꢀDIAGRAM  
128K x 8  
MEMORY ARRAY  
A0-A16  
DECODER  
VDD  
GND  
I/O  
DATA  
COLUMN I/O  
I/O0-I/O7  
CIRCUIT  
CS2  
CS1  
OE  
CONTROL  
CIRCUIT  
WE  
Copyrightꢀ©ꢀ2010ꢀIntegratedꢀSiliconꢀSolution,ꢀInc.ꢀꢀAllꢀrightsꢀreserved.ꢀꢀISSIꢀreservesꢀtheꢀrightꢀtoꢀmakeꢀchangesꢀtoꢀthisꢀspecificationꢀandꢀitsꢀproductsꢀatꢀanyꢀtimeꢀwithoutꢀ  
notice.ꢀꢀꢀISSIꢀassumesꢀnoꢀliabilityꢀarisingꢀoutꢀofꢀtheꢀapplicationꢀorꢀuseꢀofꢀanyꢀinformation,ꢀproductsꢀorꢀservicesꢀdescribedꢀherein.ꢀCustomersꢀareꢀadvisedꢀtoꢀobtainꢀtheꢀlat-  
estꢀversionꢀofꢀthisꢀdeviceꢀspecificationꢀbeforeꢀrelyingꢀonꢀanyꢀpublishedꢀinformationꢀandꢀbeforeꢀplacingꢀordersꢀforꢀproducts.  
IntegratedꢀSiliconꢀSolution,ꢀInc.ꢀdoesꢀnotꢀrecommendꢀtheꢀuseꢀofꢀanyꢀofꢀitsꢀproductsꢀinꢀlifeꢀsupportꢀapplicationsꢀwhereꢀtheꢀfailureꢀorꢀmalfunctionꢀofꢀtheꢀproductꢀcanꢀreason-  
ablyꢀbeꢀexpectedꢀtoꢀcauseꢀfailureꢀofꢀtheꢀlifeꢀsupportꢀsystemꢀorꢀtoꢀsignificantlyꢀaffectꢀitsꢀsafetyꢀorꢀeffectiveness.ꢀProductsꢀareꢀnotꢀauthorizedꢀforꢀuseꢀinꢀsuchꢀapplicationsꢀ  
unlessꢀIntegratedꢀSiliconꢀSolution,ꢀInc.ꢀreceivesꢀwrittenꢀassuranceꢀtoꢀitsꢀsatisfaction,ꢀthat:  
a.)ꢀtheꢀriskꢀofꢀinjuryꢀorꢀdamageꢀhasꢀbeenꢀminimized;  
b.)ꢀtheꢀuserꢀassumeꢀallꢀsuchꢀrisks;ꢀand  
c.)ꢀpotentialꢀliabilityꢀofꢀIntegratedꢀSiliconꢀSolution,ꢀIncꢀisꢀadequatelyꢀprotectedꢀunderꢀtheꢀcircumstancesꢀꢀ  
Integrated Silicon Solution, Inc. — www.issi.com ꢀ  
1
Rev.ꢀ B  
12/01/2010  

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