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IS62LV2568LL

更新时间: 2024-02-07 11:37:59
品牌 Logo 应用领域
美国芯成 - ISSI /
页数 文件大小 规格书
10页 64K
描述
256K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM

IS62LV2568LL 数据手册

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®
IS62LV2568LL  
256K x 8 LOW POWER and LOW Vcc  
CMOS STATIC RAM  
ISSI  
APRIL 2000  
FEATURES  
DESCRIPTION  
• Access times of 70 and 85 ns  
The ISSI IS62LV2568LL is a low voltage, 262,144 words  
CMOS low power operation:  
— 120 mW (typical) operating  
— 6 µW (typical) standby  
by 8 bits, CMOS SRAM. It is fabricated using ISSI’s low  
voltage, six transistor (6T), CMOS technology. The device is  
targeted to satisfy the demands of the state-of-the-art  
technologies such as cell phones and pagers.  
• Low data retention voltage: 2V (min.)  
When CE is HIGH (deselected), the device assumes a  
standbymodeatwhichthepowerdissipationcanbereduced  
down with CMOS input levels. Additionally, easy memory  
expansion is provided by using Chip Enable and Output  
Enable inputs, CE and OE. The active LOW Write Enable (WE)  
controls both writing and reading of the memory.  
• Output Enable (OE) and two Chip Enable  
(CE1 and CE2) inputs for ease in applications  
• TTL compatible inputs and outputs  
• Fully static operation:  
— No clock or refresh required  
The IS62LV2568LL is available in 32-pin TSOP (Type I),  
STSOP (Type I), and 36-pin mini BGA.  
• Single 2.5V to 3.0V power supply  
• Available in 32-pin TSOP (Type I), STSOP (Type I),  
and 36-pin mini BGA  
FUNCTIONAL BLOCK DIAGRAM  
256K x 8  
MEMORY ARRAY  
A0-A17  
DECODER  
VCC  
GND  
I/O  
DATA  
COLUMN I/O  
I/O0-I/O7  
CIRCUIT  
CE1  
CE2  
CONTROL  
CIRCUIT  
OE  
WE  
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any  
errors which may appear in this publication. © Copyright 2000, Integrated Silicon Solution, Inc.  
Integrated Silicon Solution, Inc. — 1-800-379-4774  
1
Rev. B  
05/03/00  

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