Datasheet > IS61VPS102418B

IS61VPS102418B

更新时间： 2024-11-28 01:07:07

品牌	Logo	应用领域
美国芯成 - ISSI		/
页数	文件大小	规格书
33页	1917K
描述
Internal self-timed write cycle

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中文翻译

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数据手册

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IS61VPS102418B 数据手册

IS61LPS51236B/IS61VPS51236B/IS61VVPS51236B

IS61LPS102418B/IS61VPS102418B/IS61VVPS102418B

512K x36 and 1024K x18 18Mb SYNCHRONOUS PIPELINED

SINGLE CYCLE DESELECT STATIC RAM

NOVEMBER 2014

FEATURES

DESCRIPTION

•

Internal self-timed write cycle

The 18Mb product family features high-speed, low-

power synchronous static RAMs designed to provide

burstable, high-performance memory for

Individual Byte Write Control and Global Write

Clock controlled, registered address, data and

control

Burst sequence control using MODE input

Three chip enable option for simple depth

expansion and address pipelining

Common data inputs and data outputs

Auto Power-down during deselect

Single cycle deselect

communication and networking applications. The

IS61LPS/VPS/VVPS51236B are organized as 524,288

words by 36bits. The IS61LPS/VPS/VVPS102418B are

organized as 1,048,576 words by 18bits. Fabricated

with ISSI's advanced CMOS technology, the device

integrates a 2-bit burst counter, high-speed SRAM

core, and high-drive capability outputs into a single

monolithic circuit. All synchronous inputs pass through

registers controlled by a positive-edge-triggered single

clock input.

•

Snooze MODE for reduced-power standby

JEDEC 100-pin QFP, 165-ball BGA and 119-ball

BGA packages

•

Power supply:

LPS: V_DD3.3V (± 5%), V_DDQ3.3V/2.5V (± 5%)

VPS: V_DD2.5V (± 5%), V_DDQ2.5V (± 5%)

VVPS: V_DD1.8V (± 5%), V_DDQ1.8V (± 5%)

JTAG Boundary Scan for BGA packages

Commercial, Industrial and Automotive

temperature support

Write cycles are internally self-timed and are initiated

by the rising edge of the clock input. Write cycles can

be one to four bytes wide as controlled by the write

control inputs.

•

Separate byte enables allow individual bytes to be

written. The byte write operation is performed by using

the byte write enable (/BWE) input combined with one

or more individual byte write signals (/BWx). In

•

Lead-free available

For leaded options, please contact ISSI

addition, Global Write (/GW) is available for writing all

bytes at one time, regardless of the byte write controls.

FAST ACCESS TIME

Symbol

tKQ

Parameter

-250

-200

Units

Bursts can be initiated with either /ADSP (Address

Status Processor) or /ADSC (Address Status Cache

Controller) input pins. Subsequent burst addresses can

be generated internally and controlled by the /ADV

(burst address advance) input pin.

Clock Access

Time

2.6

3.0

tKC

Cycle time

Frequency

250

200

MHz

The mode pin is used to select the burst sequence

order. Linear burst is achieved when this pin is tied

LOW. Interleave burst is achieved when this pin is tied

HIGH or left floating.

liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on

any published information and before placing orders for products.

Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be expected to cause

failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written

assurance to its satisfaction, that:

a.) the risk of injury or damage has been minimized;

b.) the user assume all such risks; and

c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances

Integrated Silicon Solution, Inc.- www.issi.com

Rev. B

10/16/2014

12 3 4 5 6 7...33

中文翻译

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与IS61VPS102418B相关器件

型号	品牌	获取价格	描述	数据表
IS61VPS102418B-200TQLI	ISSI	获取价格	Standard SRAM, 1MX18, 3ns, CMOS, PQFP100, LQFP-100
IS61VPS102418B-200TQLI-TR	ISSI	获取价格	Standard SRAM,
IS61VPS102418B-250TQL	ISSI	获取价格	IC SRAM 18M PARALLEL 250MHZ
IS61VPS102436A	ISSI	获取价格	1Mb x 36, 2Mb x 18 36Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM
IS61VPS102436A-166B3	ISSI	获取价格	1Mb x 36, 2Mb x 18 36Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM
IS61VPS102436A-166B3-TR	ISSI	获取价格	Standard SRAM, 1MX36, 3.5ns, CMOS, PBGA165
IS61VPS102436A-166TQ	ISSI	获取价格	1Mb x 36, 2Mb x 18 36Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM
IS61VPS102436A-166TQL	ISSI	获取价格	1Mb x 36, 2Mb x 18 36Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM
IS61VPS102436A-166TQL-TR	ISSI	获取价格	暂无描述
IS61VPS102436A-166TQ-TR	ISSI	获取价格	Standard SRAM, 1MX36, 3.5ns, CMOS, PQFP100

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